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METHOD OF MANUFACTURING TRENCH FIELD EFFECT TRANSISTORS WITH TRENCHED HEAVY BODY

  • US 20030060013A1
  • Filed: 09/24/1999
  • Published: 03/27/2003
  • Est. Priority Date: 09/24/1999
  • Status: Abandoned Application
First Claim
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1. A method of manufacturing a trench field effect transistor on a substrate having a first conductivity type, the method comprising the steps of:

  • forming a first trench extending into the substrate;

    lining the first trench with dielectric material;

    substantially filling the first trench with conductive material to form a gate electrode of the field effect transistor;

    forming a body region having a second conductivity type in the substrate;

    forming a source region having the first conductivity type inside the body region and adjacent to the first trench;

    forming a second trench adjacent to said source region and extending into the body region below the source region; and

    filling the second trench with high conductivity material for making contact to the body region.

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