Resist stripper, resist stripping method, and thin film circuit device formation method

• US 20030064326A1
• Filed: 03/27/2002
• Published: 04/03/2003
• Est. Priority Date: 09/28/2001
• Status: Abandoned Application

• Current Assignee: Fujitsu Display Technologies Corporation (Fujitsu Limited)
• Original Assignee: Fujitsu Limited
• Inventors: Yamamoto, Noboru, Hashii, Hideya
• Application Number:
  US10/107,839
• Publication Number:
  US 20030064326A1
• Time in Patent Office: Days
• US Class Current: 430/315
• CPC Class Codes: G03F 7/425 containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
• CPC Class Codes: H01L 21/31133 by chemical means

Abstract

A resist stripper has a composition including a highly polar solvent containing at least one member selected from the group consisting of N-methyl-pyrrolidone(N-methyl-2-pyrrolidone), N,N-dimethyl-acetamide, dimethyl-formamide, and N,N-methyl-formamide, and an amine compound soluble in water. A resist film used and its modified hardened portion are stripped and removed by this resist stripper.

Claims

1. A resist stripper having a composition comprising:

a highly polar solvent containing at least one member selected from the group consisting of N-methyl-pyrrolidone(N-methyl-2-pyrrolidone), N,N-dimethyl-acetamide, dimethyl-formamide, and N,N-methyl-formamide; and

an amine compound soluble in water.

2. The resist stripper according to claim 1, wherein the viscosity of said highly polar solvent is not more than 2.0 mPa·

s at 25°

C.

3. The resist stripper according to claim 1, wherein the concentration of said highly polar solvent is 90 to 99 wt %, and the concentration of said amine compound is not more than 10 wt %.

4. The resist stripper according to claim 1, wherein the concentration of said highly polar solvent is 90 to 99 wt %, the concentration of said amine compound is not more than 10 wt %, and the water content is not more than 5 wt %.

5. The resist stripper according to claim 1, wherein the viscosity is not more than 4.0 mPa·

s at 25°

C.

6. A resist stripping method of stripping and removing a resist film, comprising the step of stripping and removing at least a modified hardened portion in a surface layer of said resist film by using a resist stripper having a composition comprising:

a highly polar solvent containing at least one member selected from the group consisting of N-methyl-pyrrolidone(N-methyl-2-pyrrolidone), N,N-dimethyl-acetamide, dimethyl-formamide, and N,N-methyl-formamide; and

an amine compound soluble in water.

7. The method according to claim 6, wherein the viscosity of said highly polar solvent is not more than 2.0 mPa·

s at 25°

C.

8. The method according to claim 6, wherein the concentration of said highly polar solvent is 90 to 99 wt %, and the concentration of said amine compound is not more than 10 wt %.

9. The method according to claim 6, wherein the concentration of said highly polar solvent is 90 to 99 wt %, the concentration of said amine compound is not more than 10 wt %, and the water content is not more than 5 wt %.

10. The method according to claim 6, wherein the viscosity of the resist stripper is not more than 4.0 mPa·

s at 25°

C.

11. The method according to claim 6, wherein one or a plurality of processes selected from the group consisting of dipping, spraying, pressure application, air pressure application, and ultrasonic processing are combined by using said resist stripper.

12. The method according to claim 6, wherein a processing temperature when said resist stripper is used is 30°

C. to 60°

C.

13. A resist stripping method comprising the step of stripping and removing a resist film by using a resist stripper having a composition comprising:

a highly polar solvent containing at least one member selected from the group consisting of N-methyl-pyrrolidone(N-methyl-2-pyrrolidone), N,N-dimethyl-acetamide, dimethyl-formamide, and N,N-methyl-formamide; and

an amine compound soluble in water.

14. The method according to claim 13, wherein the viscosity of said highly polar solvent is not more than 2.0 mPa·

s at 25°

C.

15. The method according to claim 13, wherein the concentration of said highly polar solvent is 90 to 99 wt %, and the concentration of said amine compound is not more than 10 wt %.

16. The method according to claim 13, wherein the concentration of said highly polar solvent is 90 to 99 wt %, the concentration of said amine compound is not more than 10 wt %, and the water content is not more than 5 wt %.

17. The method according to claim 13, wherein the viscosity of the resist stripper is not more than 4.0 mPa·

s at 25°

C.

18. The method according to claim 13, wherein one or a plurality of processes selected from the group consisting of dipping, spraying, pressure application, air pressure application, and ultrasonic processing are combined by using said resist stripper.

19. The method according to claim 13, wherein a processing temperature when said resist stripper is used is 30°

C. to 60°

C.

20. A resist stripping method of stripping and removing a resist film, comprising the step of inducing at least an initial dissolution reaction of the resist film by using a resist stripper having a composition comprising:

a highly polar solvent containing at least one member selected from the group consisting of N-methyl-pyrrolidone(N-methyl-2-pyrrolidone), N,N-dimethyl-acetamide, dimethyl-formamide, and N,N-methyl-formamide; and

an amine compound soluble in water.

21. The method according to claim 20, wherein the viscosity of said highly polar solvent is not more than 2.0 mPa·

s at 25°

C.

22. The method according to claim 20, wherein the concentration of said highly polar solvent is 90 to 99 wt %, and the concentration of said amine compound is not more than 10 wt %.

23. The method according to claim 20, wherein the concentration of said highly polar solvent is 90 to 99 wt %, the concentration of said amine compound is not more than 10 wt %, and the water content is not more than 5 wt %.

24. The method according to claim 20, wherein the viscosity of the resist stripper is not more than 4.0 mPa·

s at 25°

C.

25. The method according to claim 20, wherein one or a plurality of processes selected from the group consisting of dipping, spraying, pressure application, air pressure application, and ultrasonic processing are combined by using said resist stripper.

26. The method according to claim 20, wherein a processing temperature when the resist stripper is used is 30°

C. to 60°

C.

27. A resist stripping method comprising the steps of:

irradiating a resist film with ultraviolet radiation; and

stripping and removing said resist film by using a resist stripper having a composition comprising;

a highly polar solvent containing at least one member selected from the group consisting of N-methyl-pyrrolidone(N-methyl-2-pyrrolidone), N,N-dimethyl-acetamide, dimethyl-formamide, and N,N-methyl-formamide; and

an amine compound soluble in water.

28. The method according to claim 27, wherein the viscosity of said highly polar solvent is not more than 2.0 mPa·

s at 25°

C.

29. The method according to claim 27, wherein the concentration of said highly polar solvent is 90 to 99 wt %, and the concentration of said amine compound is not more than 10 wt %.

30. The method according to claim 27, wherein the concentration of said highly polar solvent is 90 to 99 wt %, the concentration of said amine compound is not more than 10 wt %, and the water content is not more than 5 wt %.

31. The method according to claim 27, wherein the viscosity of the resist stripper is not more than 4.0 mpa·

s at 25°

C.

32. The method according to claim 27, wherein one or a plurality of processes selected from the group consisting of dipping, spraying, pressure application, air pressure application, and ultrasonic processing are combined by using said resist stripper.

33. The method according to claim 27, wherein a processing temperature when said resist stripper is used is 30°

C. to 60°

C.

34. A thin film circuit device formation method comprising the steps of:

forming a thin film selected from the group consisting of an insulating film, conductive film, and semiconductor film on a substrate;

forming a resist pattern on said thin film;

processing said thin film by using said resist pattern as a mask; and

stripping and removing the resist pattern by using a resist stripper having a composition comprising;

a highly polar solvent containing at least one member selected from the group consisting of N-methyl-pyrrolidone(N-methyl-2-pyrrolidone), N,N-dimethyl-acetamide, dimethyl-formamide, and N,N-methyl-formamide; and

an amine compound soluble in water.

35. The method according to claim 34, wherein when said resist pattern is to be stripped and removed, said resist pattern is irradiated with ultraviolet radiation before said resist stripper is used.

36. A thin film circuit device formation method comprising the steps of:

forming a resist pattern on an object of impurity doping which is a substrate or one of a conductive film and semiconductor film formed on a substrate;

doping an impurity into said object of impurity doping by using said resist pattern as a mask; and

stripping and removing said resist pattern by using a resist stripper having a composition comprising;

a highly polar solvent containing at least one member selected from the group consisting of N-methyl-pyrrolidone(N-methyl-2-pyrrolidone), N,N-dimethyl-acetamide, dimethyl-formamide, and N,N-methyl-formamide; and

an amine compound soluble in water.

37. The method according to claim 36, wherein when said resist pattern is to be stripped and removed, said resist pattern is irradiated with ultraviolet radiation before said resist stripper is used.