Method of peeling off and method of manufacturing semiconductor device
First Claim
1. A peeling method for peeling a peeled off layer from a substrate comprising:
- forming said peeled off layer composed of a first material layer having a tensile stress over said substrate and a second material layer having a compressive stress and provided adjacent to at least said first material layer over said substrate; and
subsequently peeling said peeled off layer off said substrate bearing said first material layer by physical means within said second material layer or in interface of said second material layer.
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Accused Products
Abstract
The invention aims to provide a peeling method without damaging a peeled off layer and to allow separation of not only a peeled off layer having a small surface area but also the entire surface of a peeled off layer having a large surface area. Further, the invention aims to provide a lightweight semiconductor device by sticking a peeled off layer to a variety of substrates and its manufacturing method. Especially, the invention aims to provide a lightweight semiconductor device by sticking a variety of elements such as TFT to a flexible film and its manufacturing method. Even in the case a first material layer 11 is formed on a substrate and a second material layer 12 is formed adjacently to the foregoing first material layer 11, and further, layered film formation, heating treatment at 500° C. or higher or laser beam radiating treatment is carried out, if the first material layer has a tensile stress before the peeling and the second material layer has a compressive stress, excellent separation can easily be carried out by physical means in the interlayer or interface of the second material layer 12.
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Citations
32 Claims
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1. A peeling method for peeling a peeled off layer from a substrate comprising:
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forming said peeled off layer composed of a first material layer having a tensile stress over said substrate and a second material layer having a compressive stress and provided adjacent to at least said first material layer over said substrate; and
subsequently peeling said peeled off layer off said substrate bearing said first material layer by physical means within said second material layer or in interface of said second material layer. - View Dependent Claims (2, 3)
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4. A peeling method for peeling a peeled off layer from a substrate comprising:
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forming said peeled off layer composed of a first material layer over said substrate and a second material layer having a compressive stress and provided adjacent to at least said first material layer over said substrate; and
subsequently peeling said peeled off layer off said substrate bearing said first material layer by physical means within said second material layer or in interface of said second material layer. - View Dependent Claims (5, 6, 7, 8)
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9. A peeling method for peeling a peeled off layer off a substrate comprising:
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forming said peeled off layer composed of a first material layer having a tensile stress over said substrate and a second material layer having a compressive stress and provided adjacent to at least said first material layer over said substrate;
sticking a supporting body to the peeled off layer; and
subsequently peeling said peeled off layer off said substrate bearing said first material layer by physical means within said second material layer or in interface of said second material layer. - View Dependent Claims (12)
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10. A peeling method for peeling a peeled off layer off a substrate comprising:
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forming said peeled off layer composed of a first material layer over said substrate and a second material layer having a compressive stress and provided adjacent to at least said first material layer over said substrate;
sticking a supporting body to the peeled off layer; and
subsequently peeling said peeled off layer off said substrate bearing said first material layer by physical means within said second material layer or in interface of said second material layer. - View Dependent Claims (11, 13)
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14. A semiconductor device manufacturing method comprising:
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forming a first material layer having tensile stress over a substrate;
forming a second material layer having a compressive stress over said first material layer;
forming an insulating layer over said second material layer;
forming an element over said insulating layer;
sticking a supporting body to said element;
subsequently peeling said supporting body from said substrate by physical means within said second material layer or in the interface of said second material layer; and
sticking a transfer body to said insulating layer or said second material layer to sandwich said element between said supporting body and said transfer body. - View Dependent Claims (15, 16, 17, 18, 19, 20, 21, 31)
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22. A semiconductor device manufacturing method comprising:
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forming a first material layer over a substrate;
forming a second material layer having a compressive stress over said first material layer;
forming an insulating layer over said second material layer;
forming an element over said insulating layer;
sticking a supporting body to said element;
subsequently peeling said supporting body off said substrate by physical means within said second material layer or in the interface of said second material layer; and
sticking a transfer body to said insulating layer or said second material layer to sandwich said element between said supporting body and said transfer body. - View Dependent Claims (23, 24, 25, 26, 27, 28, 29, 30, 32)
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Specification