Method of peeling off and method of manufacturing semiconductor device

• US 20030064569A1
• Filed: 08/09/2002
• Published: 04/03/2003
• Est. Priority Date: 08/10/2001
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Takayama, Toru, Maruyama, Junya, Yamazaki, Shunpei
• Granted Patent: US 6,946,361 B2
• Time in Patent Office: Days
• US Class Current: 438/455
• CPC Class Codes: H01L 21/76251 using bonding techniques
• CPC Class Codes: H01L 27/1214 comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
• CPC Class Codes: H01L 27/1266 the substrate on which the devices are formed not being the final device substrate, e.g. using a temporary substrate

Abstract

The invention aims to provide a peeling method without damaging a peeled off layer and to allow separation of not only a peeled off layer having a small surface area but also the entire surface of a peeled off layer having a large surface area. Further, the invention aims to provide a lightweight semiconductor device by sticking a peeled off layer to a variety of substrates and its manufacturing method. Especially, the invention aims to provide a lightweight semiconductor device by sticking a variety of elements such as TFT to a flexible film and its manufacturing method. Even in the case a first material layer 11 is formed on a substrate and a second material layer 12 is formed adjacently to the foregoing first material layer 11, and further, layered film formation, heating treatment at 500° C. or higher or laser beam radiating treatment is carried out, if the first material layer has a tensile stress before the peeling and the second material layer has a compressive stress, excellent separation can easily be carried out by physical means in the interlayer or interface of the second material layer 12.

Claims

1. A peeling method for peeling a peeled off layer from a substrate comprising:

forming said peeled off layer composed of a first material layer having a tensile stress over said substrate and a second material layer having a compressive stress and provided adjacent to at least said first material layer over said substrate; and

subsequently peeling said peeled off layer off said substrate bearing said first material layer by physical means within said second material layer or in interface of said second material layer.

2. A method according to claim 1, wherein said first material layer has a tensile stress in a range of 1 to 1×

10¹⁰ (Dyne/cm²).

3. A method according to claim 1, wherein said second material layer has a compressive stress in a range of −

1 to −

1×

10¹⁰ (Dyne/cm²).

4. A peeling method for peeling a peeled off layer from a substrate comprising:

forming said peeled off layer composed of a first material layer over said substrate and a second material layer having a compressive stress and provided adjacent to at least said first material layer over said substrate; and

subsequently peeling said peeled off layer off said substrate bearing said first material layer by physical means within said second material layer or in interface of said second material layer.

5. A method according to claim 4, wherein said first material layer has a tensile stress in a range of 1 to 1×

10¹⁰ (Dyne/cm²) immediately before the peeling-off.

6. A method according to claim 4, wherein heating treatment or laser beam radiating treatment is carried out before the peeling-off.

7. A method according to claim 4, wherein said first material layer has a compressive stress immediately after the formation and has a tensile stress immediately before the peeling-off.

8. A method according to claim 4, wherein said second material layer has a compressive stress in a range of −

1 to −

1×

10¹⁰ (Dyne/cm²) immediately before the peeling-off.

9. A peeling method for peeling a peeled off layer off a substrate comprising:

forming said peeled off layer composed of a first material layer having a tensile stress over said substrate and a second material layer having a compressive stress and provided adjacent to at least said first material layer over said substrate;

sticking a supporting body to the peeled off layer; and

subsequently peeling said peeled off layer off said substrate bearing said first material layer by physical means within said second material layer or in interface of said second material layer.

12. A method according to claim 9, wherein heating treatment or laser beam radiating treatment is carried out before sticking said support body to said peeled off layer.

10. A peeling method for peeling a peeled off layer off a substrate comprising:

forming said peeled off layer composed of a first material layer over said substrate and a second material layer having a compressive stress and provided adjacent to at least said first material layer over said substrate;

sticking a supporting body to the peeled off layer; and

subsequently peeling said peeled off layer off said substrate bearing said first material layer by physical means within said second material layer or in interface of said second material layer.

11. A method according to claim 10, wherein said first material layer has a compressive stress immediately after the formation and has a tensile stress immediately before the peeling-off.

13. A method according to claim 10, wherein heating treatment or laser beam radiating treatment is carried out before sticking said support body to said peeled off layer.

14. A semiconductor device manufacturing method comprising:

forming a first material layer having tensile stress over a substrate;

forming a second material layer having a compressive stress over said first material layer;

forming an insulating layer over said second material layer;

forming an element over said insulating layer;

sticking a supporting body to said element;

subsequently peeling said supporting body from said substrate by physical means within said second material layer or in the interface of said second material layer; and

sticking a transfer body to said insulating layer or said second material layer to sandwich said element between said supporting body and said transfer body.

15. A method according to claim 14, wherein said supporting body is a film substrate or a substrate.

16. A method according to claim 14, wherein said transfer body is a film substrate or a substrate.

17. A method according to claim 14, wherein heating treatment or laser beam radiating treatment is carried out before sticking said supporting body to said element.

18. A method according to claim 14, wherein heating treatment or laser beam radiating treatment is carried out before the peeling-off by said physical means.

19. A method according to claim 14, wherein said element is a thin film transistor having a semiconductor layer as an active layer and a step of forming said semiconductor layer is carried out by crystallizing a semiconductor layer having an amorphous structure by heating treatment or laser beam radiating treatment to crystallize and form a semiconductor layer having a crystalline structure.

20. A method according to claim 14, wherein said supporting body is a counter substrate and said element has a pixel electrode and a liquid crystal is packed between said pixel electrode and said counter substrate.

21. A method according to claim 14, wherein said supporting body is a sealing material and said element is a light emitting element.

31. A method according to claim 14 wherein said semiconductor device is incorporated in one selected from the group consisting of a personal computer, a video camera, a mobile computer, a goggle type display, a player using a recording medium, digital camera, a cellular phone, an electronic book, and a display.

22. A semiconductor device manufacturing method comprising:

forming a first material layer over a substrate;

forming a second material layer having a compressive stress over said first material layer;

forming an insulating layer over said second material layer;

forming an element over said insulating layer;

sticking a supporting body to said element;

subsequently peeling said supporting body off said substrate by physical means within said second material layer or in the interface of said second material layer; and

sticking a transfer body to said insulating layer or said second material layer to sandwich said element between said supporting body and said transfer body.

23. A method according to claim 22, wherein said first material layer has a compressive stress immediately after the formation and has a tensile stress immediately before the peeling-off.

24. A method according to claim 22, wherein said supporting body is a film substrate or a substrate.

25. A method according to claim 22, wherein said transfer body is a film substrate or a substrate.

26. A method according to claim 22, wherein heating treatment or laser beam radiating treatment is carried out before sticking said supporting body to said element.

27. A method according to claim 22, wherein heating treatment or laser beam radiating treatment is carried out before the peeling-off by said physical means.

28. A method according to claim 22, wherein said element is a thin film transistor having a semiconductor layer as an active layer and a step of forming said semiconductor layer is carried out by crystallizing a semiconductor layer having an amorphous structure by heating treatment or laser beam radiating treatment to crystallize and form a semiconductor layer having a crystalline structure.

29. A method according to claim 22, wherein said supporting body is a counter substrate and said element has a pixel electrode and a liquid crystal is packed between said pixel electrode and said counter substrate.

30. A method according to claim 22, wherein said supporting body is a sealing material and said element is a light emitting element.

32. A method according to claim 22 wherein said semiconductor device is incorporated in one selected from the group consisting of a personal computer, a video camera, a mobile computer, a goggle type display, a player using a recording medium, digital camera, a cellular phone, an electronic book, and a display.