Lid cooling mechanism and method for optimized deposition of low-K dielectric using TRI methylsilane-ozone based processes

• US 20030066482A1
• Filed: 11/08/2002
• Published: 04/10/2003
• Est. Priority Date: 08/17/1999
• Status: Active Grant

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: Xia, Li-Qun, Lim, Tian H., Pokharna, Himansu
• Granted Patent: US 6,899,763 B2
• Time in Patent Office: Days
• US Class Current: 118/696
• CPC Class Codes: C23C 16/401 containing silicon
• CPC Class Codes: C23C 16/4411 Cooling of the reaction chamber walls C23C16/45572 takes precedence
• CPC Class Codes: C23C 16/455 characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
• CPC Class Codes: C23C 16/45572 Cooled nozzles
• CPC Class Codes: H01L 21/02126 the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
• CPC Class Codes: H01L 21/022 the layer being a laminate, i.e. composed of sublayers, e.g. stacks of alternating high-k metal oxides adhesion layers or buffer layers H01L21/02304, H01L21/02362
• CPC Class Codes: H01L 21/02203 the layer being porous
• CPC Class Codes: H01L 21/02208 the precursor containing a compound comprising Si
• CPC Class Codes: H01L 21/02211 the compound being a silane, e.g. disilane, methylsilane or chlorosilane
• CPC Class Codes: H01L 21/02271 deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition H01L21/02266 takes precedence
• CPC Class Codes: H01L 21/02274 in the presence of a plasma [PECVD]
• CPC Class Codes: H01L 21/02312 treatment by exposure to a gas or vapour
• CPC Class Codes: H01L 21/02337 treatment by exposure to a gas or vapour
• CPC Class Codes: H01L 21/0234 treatment by exposure to a plasma
• CPC Class Codes: H01L 21/02362 formation of intermediate layers, e.g. capping layers or diffusion barriers
• CPC Class Codes: H01L 21/31612 on a silicon body
• CPC Class Codes: H01L 21/31633 Deposition of carbon doped silicon oxide, e.g. SiOC

Abstract

An apparatus and method for depositing thin films. The apparatus generally comprises a process chamber having one or more walls and a lid and two heat exchangers. A first heat exchanger is coupled to the walls and a second heat exchanger is coupled to the lid. The two heat exchangers are configured to provide separate temperature control of the walls and lid. Separate control of the lid and wall temperatures inhibits reaction of the organosilane within the lid while optimizing a reaction within the chamber. The apparatus implements a method, in which a process gas comprising ozone and an organosilane are admitted through the into a processing while a substrate is heated to form a carbon-doped silicon oxide layer over the substrate. During deposition, the lid is kept cooler than the walls.

Claims

1. Apparatus for depositing thin films, comprising:

a housing defining a process chamber having one or more walls and a lid;

a first heat exchanger coupled to said walls; and

a second heat exchanger coupled to said lid;

wherein said first and second heat exchangers are configured to maintain said lid at a different temperature than said walls.

2. The apparatus of claim 1, wherein at least one of said one or more walls includes one or more heat exchange passages coupled to said first heat exchanger.

3. The apparatus of claim 1 wherein said lid includes one or more heat exchange passages coupled to said second heat exchanger.

4. The apparatus of claim 1, further comprising:

a gas delivery system configured to introduce gases into said process chamber.

5. The apparatus of claim 4, wherein said gas distribution system includes:

a gas distribution manifold attached to said lid.

6. The apparatus of claim 5 wherein said gas distribution system further includes a gas distribution face plate fluidly coupled to said gas distribution manifold.

7. The apparatus of claim 6 wherein said gas distribution system further includes a blocker plate disposed between said manifold and said faceplate.

8. The apparatus of claim 7 wherein said second heat exchanger is configured to maintain said lid at a temperature such that a process gas does not react behind said blocker plate.

9. The apparatus of claim 1, further comprising a substrate holder, adapted to hold a substrate during substrate processing.

10. The apparatus of claim 9, further comprising a heater, operatively coupled to heat said substrate holder.

12. The apparatus of claim 1, wherein said second wall is a chamber lid.

11. A substrate processing apparatus, comprising:

a housing defining a process chamber having a substrate processing region, a first wall perimetrically surrounding said substrate processing region, and a second wall positioned over said substrate processing region, said first wall comprising a first fluid passage within an interior of said first wall, said second wall comprising a second fluid passage within an interior of said second wall, wherein said first and second passages are not fluidly coupled to each other;

a first heat exchanger operatively coupled to maintain fluid within said first fluid passage at a first temperature; and

a second heat exchanger operatively coupled to maintain fluid within said second fluid passage at a second temperature.

13. A substrate processing system comprising:

a housing defining a process chamber having one or more walls and a lid;

a substrate holder, adapted to hold a substrate during substrate processing;

a heater, operatively coupled to heat said substrate holder;

a gas delivery system configured to introduce gases into said process chamber;

a first heat exchanger coupled to said walls;

a second heat exchanger coupled to said lid;

wherein said first and second heat exchangers are configured to maintain said lid at a different temperature than said walls;

a controller for controlling said gas delivery system and said heater; and

a memory coupled to said controller comprising a computer-readable medium having a computer-readable program embodied therein for directing operation of said controller, said computer-readable program including

a first set of instructions to control said first heat exchanger to maintain said walls at a first temperature;

a second set of instructions to control said second heat exchanger to maintain said second heat exchanger at a second temperature different from said first temperature; and

a third set of instructions to control said gas delivery system to flow a process gas comprising ozone and an organosilane having at least one silicon-carbon bond into the substrate processing chamber and control said heater to heat the substrate holder to a temperature of between 100-250°

C.

16. The method of claim 13 wherein said first temperature is between 55 and 100°

C.

14. A method for forming an insulation layer over a substrate disposed in a substrate processing chamber having one or more walls and a lid, the method comprising:

flowing a process gas comprising ozone and an organosilane through said lid into the substrate processing chamber;

heating the substrate to a temperature of less than about 250°

C. to form a carbon-doped silicon oxide layer over the substrate;

maintaining the walls at a first temperature; and

maintaining the lid at a second temperature.

15. The method of claim 14 wherein said first temperature is chosen to optimize a reaction in said process chamber that forms said carbon-doped silicon oxide layer.

17. The method of claim 14 wherein said second temperature is chosen to inhibit a reaction of said process gas within said lid.

18. The method of claim 17 wherein said second temperature is approximately 25°

C.

19. The method of claim 14 wherein the substrate is heated by a pedestal heater set to a temperature of between 150-200°

C.

20. The method of claim 14 wherein the organosilane precursor is either tetramethylsilane or trimethylsilane.

21. A computer readable storage medium having a computer-readable program embodied therein for directing operation of a substrate processing system including a process chamber having walls and a lid;

a substrate holder;

a heater, operatively coupled to heat said substrate holder;

a gas delivery system configured to introduce gases into said process chamber, a first heat exchanger operatively coupled to said walls, a second heat exchanger operatively coupled to said lid;

said computer-readable program including instructions for operating said substrate processing system to form an insulation layer over a substrate disposed in the processing chamber in accordance with the following;

flowing a process gas comprising ozone and an organosilane into the substrate processing chamber;

heating the substrate to a temperature of less than about 250°

C. to form a carbon-doped silicon oxide layer over the substrate;

densifying said carbon-doped silicon oxide layer;

maintaining the walls at a first temperature; and

maintaining the lid at a second temperature.