Please download the dossier by clicking on the dossier button x
×

Magnetoresistive element and nonvolatile solid-state memory using the same

  • US 20030067800A1
  • Filed: 10/01/2002
  • Published: 04/10/2003
  • Est. Priority Date: 10/02/2001
  • Status: Active Grant
First Claim
Patent Images

1. A magnetoresistive element comprising a first magnetic layer and a second magnetic layer whose coercive forces are different, and a non-magnetic layer disposed between the magnetic layers, wherein edges of the magnetoresistive element have tapered angle.

View all claims
  • 1 Assignment
Timeline View
Assignment View
    ×
    ×