Magnetoresistive element and nonvolatile solid-state memory using the same
First Claim
1. A magnetoresistive element comprising a first magnetic layer and a second magnetic layer whose coercive forces are different, and a non-magnetic layer disposed between the magnetic layers, wherein edges of the magnetoresistive element have tapered angle.
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Abstract
The present invention provides a magnetoresistive element in which a first magnetic layer and a second magnetic layer whose coercive forces are different, and a non-magnetic layer that is disposed between the magnetic layers, wherein edges of the magnetoresistive element are tapered, or a magnetoresistive element in which a first magnetic layer and a second magnetic layer, and a non-magnetic layer that is disposed between the magnetic layers, wherein the coercive force of the first magnetic layer is larger than the coercive force of the second magnetic layer, and wherein relation between a base area S1 of the first magnetic layer and a base area S2 of the second magnetic layer is S1>S2.
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Citations
15 Claims
- 1. A magnetoresistive element comprising a first magnetic layer and a second magnetic layer whose coercive forces are different, and a non-magnetic layer disposed between the magnetic layers, wherein edges of the magnetoresistive element have tapered angle.
- 7. A magnetoresistive element comprising a first magnetic layer and a second magnetic layer, and a non-magnetic layer disposed between the magnetic layers, wherein coercive force of the first magnetic layer is larger than coercive force of the second magnetic layer, and wherein the relation between a base area S1 of the first magnetic layer and a base area S2 of the second magnetic layer is S1>
Specification