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Hillock-free aluminum wiring layer and method of forming the same

  • US 20030068522A1
  • Filed: 01/15/2002
  • Published: 04/10/2003
  • Est. Priority Date: 05/31/2001
  • Status: Active Grant
First Claim
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1. A wiring layer comprising at least two pure aluminum (Al) layers formed on a substrate, wherein said at least two pure Al layers comprise:

  • a first pure Al layer formed on the substrate, said first layer including a plurality of first Al crystal particles; and

    a second pure Al layer formed on the first pure Al layer, said second layer including a plurality of second Al crystal particles;

    wherein said second Al crystal particles are substantially larger in size than said first Al crystal particles, and said second Al crystal particles of said second pure Al layer are more densely arranged than said first Al crystal particles of said first pure Al layer;

    whereby said at least two pure Al layers of the wiring layer are capable of preventing hillocks.

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