Wide-bandgap, lattice-mismatched window layer for a solar energy conversion device

• US 20030070707A1
• Filed: 10/12/2001
• Published: 04/17/2003
• Est. Priority Date: 10/12/2001
• Status: Abandoned Application

• Current Assignee: The Boeing Co.
• Original Assignee: The Boeing Co.
• Inventors: Ermer, James H., Colter, Peter C., King, Richard Roland, Haddad, Moran, Karam, Nasser H.
• Application Number:
  US09/976,508
• Publication Number:
  US 20030070707A1
• Time in Patent Office: Days
• US Class Current: 136/255
• CPC Class Codes: H01L 31/02168 the coatings being antireflective or having enhancing optical properties for the solar cells
• CPC Class Codes: H01L 31/0687 Multiple junction or tandem solar cells
• CPC Class Codes: H01L 31/0725 Multiple junction or tandem solar cells
• CPC Class Codes: H01L 31/076 Multiple junction or tandem solar cells
• CPC Class Codes: Y02E 10/544 Solar cells from Group III-V materials
• CPC Class Codes: Y02E 10/548 Amorphous silicon PV cells

Abstract

A photovoltaic cell or other optoelectronic device having a wide-bandgap semiconductor used in the window layer. This wider bandgap is achieved by using a semiconductor composition that is not lattice-matched to the cell layer directly beneath it and/or to the growth substrate. The wider bandgap of the window layer increases the transmission of short wavelength light into the emitter and base layers of the photovoltaic cell. This in turn increases the current generation in the photovoltaic cell. Additionally, the wider bandgap of the lattice mismatched window layer inhibits minority carrier injection and recombination in the window layer.

Claims

1. A photovoltaic cell comprising:

at least one subcell, each of said at least one subcells having an emitter layer and a base layer; and

a lattice-mismatched window layer positioned directly above said emitter layer of a top subcell of said at least one subcell, wherein the lattice-mismatched window layer is composed of a first material, said first material having a lattice constant, if fully relaxed, that is not equal to the lattice constant of the material composing said emitter layer and the material composing said base layer of said top subcell.

2. The photovoltaic cell of claim 1, wherein said lattice constant of said lattice mismatched window layer, when relaxed, is less than the lattice constant of the material composing said emitter layer and the material composing said base layer of said top subcell.

3. The photovoltaic cell of claim 1, wherein said lattice constant of said lattice mismatched window layer, when relaxed, is greater than the lattice constant of the material composing said emitter layer and the material composing said base layer of said top subcell.

4. The photovoltaic cell of claim 1, wherein said lattice mismatched window layer is fully strained with respect to said emitter layer and said base layer of said top subcell.

5. The photovoltaic cell of claim 1, wherein said lattice mismatched window layer is fully relaxed with respect to said emitter layer and said base layer of said top subcell by virtue of dislocations in the crystal structure of said lattice mismatched window layer.

6. The photovoltaic cell of claim 1, wherein the strain value of said lattice mismatched window layer is intermediate between a fully relaxed strain value and a fully strained strain value with respect to said emitter layer and said base layer of said top subcell.

7. The photovoltaic cell of claim 1, wherein the composition of said lattice-mismatched window layer is selected from the group consisting of AlInP, AlAs, AlP, AlGaInP, AlGaAsP, AlGaInAs, AlGaInPAs, GaInP, GaInAs, GaInPAs, AlGaAs, AlInAs, AlInPAs, GaAsSb, AlAsSb, GaAlAsSb, AlInSb, GaInSb, AlGaInSb, AIN, GaN, InN, GaInN, AlGaInN, GaInNAs, AlGaInNAs, Ge, Si, SiGe, ZnSSe, and CdSSe.

8. The photovoltaic cell of claim 1, wherein the photovoltaic cell is a single-junction photovoltaic cell.

9. The photovoltaic cell of claim 1, wherein the photovoltaic cell is a multijunction photovoltaic cell.

10. The photovoltaic cell of claim 1, wherein said emitter layer of said top subcell is a heterojunction emitter layer.

11. The photovoltaic cell of claim 1, wherein said emitter layer of said top subcell is a homojunction emitter layer.

12. The photovoltaic cell of claim 1 further comprising a bottom subcell located below said at least one subcell, said bottom subcell having a base layer composed of a growth substrate.

13. The photovoltaic cell of claim 1 further comprising one or more layers of an anti-reflection coating optically coupled to said lattice-mismatched window layer.

14. A photovoltaic cell comprising:

at least one subcell, each of said at least one subcells having an emitter layer and a base layer, wherein said emitter layer of a top one of said at least one subcells is a heterojunction emitter layer composed of a first material, said first material having a lattice constant, if fully relaxed, that is not equal to the lattice constant of the material composing said base layer of said top one of said at least one subcells.

15. The photovoltaic cell of claim 14 further comprising a lattice-mismatched window layer positioned directly above said heterojunction emitter layer, wherein said lattice-mismatched window layer is composed of a second material, said second material having a lattice constant, if fully relaxed, that is not equal to the lattice constant of said first material.

16. The photovoltaic cell of claim 14 further comprising a lattice-mismatched window layer positioned directly above said heterojunction emitter layer, wherein said lattice-mismatched window layer is composed of a second material, said second material having a lattice constant, if fully relaxed, that is equal to the lattice constant of said first material.

17. The photovoltaic cell of claim 14, wherein the composition of said heterojunction emitter layer is selected from the group consisting of AlInP, AlAs, AlP, AlGaInP, AlGaAsP, AlGaInAs, AlGaInPAs, GaInP, GaInAs, GaInPAs, AlGaAs, AlInAs, AlInPAs, GaAsSb, AlAsSb, GaAlAsSb, AlInSb, GaInSb, AlGaInSb, AIN, GaN, InN, GaInN, AlGaInN, GaInNAs, AlGaInNAs, Ge, Si, SiGe, ZnSSe, and CdSSe.

18. A photovoltaic cell comprising:

at least one subcell, each of said at least one subcells having an emitter layer and a base layer, wherein at least one of said at least one subcells has a BSF layer;

wherein at least one of said at least one BSF layers is composed of a first material, said first material having a lattice constant, if fully relaxed, that is not equal to the lattice constant of the material composing said base layer of said corresponding one of said at least one subcells.

19. The photovoltaic cell of claim 18, wherein the composition of said at least one of said at least one BSF layers is selected from the group consisting of AlInP, AlAs, AlP, AlGaInP, AlGaAsP, AlGaInAs, AlGaInPAs, GaInP, GaInAs, GaInPAs, AlGaAs, AlInAs, AlInPAs, GaAsSb, AlAsSb, GaAlAsSb, AlInSb, GaInSb, AlGaInSb, AIN, GaN, InN, GaInN, AlGaInN, GaInNAs, AlGaInNAs, Ge, Si, SiGe, ZnSSe, and CdSSe.

20. A photovoltiac cell comprising:

at least one subcell, each of said at least one subcells having an emitter layer and a base layer, wherein at least one of said at least one emitter layers is a lattice-mismatched heterojunction emitter layer and is composed of a first material, said first material having a lattice constant, if fully relaxed, that is not equal to the lattice constant of the material composing said base layer of said corresponding subcell.

21. A photovoltiac cell comprising:

at least one subcell, each of said at least one subcells having an emitter layer and a base layer; and

a lattice mismatched window layer positioned directly above one of said at least one emitter layers, wherein said lattice mismatched window layer is composed of a first material, said first material having a lattice constant, if fully relaxed, that is not equal to the lattice constant of the material composing said emitter layer of said corresponding subcell and is not equal to the lattice constant of the material composing said base layer of said corresponding subcell.

22. A method for increasing current generation in a photovoltaic cell or other optoelectronic device, the method comprising the steps of:

providing at least one subcell layer, wherein each of said at least one subcell layers has an emitter layer and a base layer; and

growing a lattice-mismatched window layer positioned directly above said emitter layer of a top one of said at least one subcell layer, wherein the lattice-mismatched window layer is composed of a first material, said first material having a lattice constant, if fully relaxed, that is not equal to the lattice constant of the material composing said emitter layer and the material composing said base layer of said top subcell.

23. The method of claim 22 further comprising the step of introducing an anti-reflection coating composed of one or more layers to a top surface of said lattice mismatched window layer.

24. The method of claim 22, further comprising the step of providing a bottom cell having a bottom cell base layer composed of a portion of a growth substrate, wherein the lattice constant of said first material, if fully relaxed, is not equal to the lattice constant of the material composing said bottom cell base layer.

25. The method of claim 22, wherein the photovoltaic cell or other optoelectronic device is selected from the group consisting of a space photovoltaic cell, a terrestrial photovoltaic cell, a single-junction photovoltaic cell, a multijunction photovoltaic cell, a non-concentrator photovoltaic cell, a concentrator photovoltaic cell, a homojunction photovoltaic cell, a heterojunction photovoltaic cell, a light detector, and an optoelectronic device.