Quantum devices based on crystallized electron pairs and methods for their manufacture and use

• US 20030071246A1
• Filed: 01/22/2002
• Published: 04/17/2003
• Est. Priority Date: 01/23/2001
• Status: Active Grant

• Current Assignee: Quantum Polymer Technologies Corporation
• Original Assignee: Quantum Polymer Technologies Corporation
• Inventors: Krayev, Andrey, Grigorov, Leonid N., Talroze, Raisa V.
• Granted Patent: US 7,014,795 B2
• Time in Patent Office: Days
• US Class Current: 252/500
• CPC Class Codes: B82Y 10/00 Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
• CPC Class Codes: C08F 120/34 Esters containing nitrogen , e.g. N,N-dimethylaminoethyl (meth)acrylate
• CPC Class Codes: C08F 8/44 Preparation of metal salts or ammonium salts
• CPC Class Codes: H01B 1/122 Ionic conductors
• CPC Class Codes: H02K 1/02 characterised by the magnetic material
• CPC Class Codes: H02K 3/02 Windings characterised by the conductor material
• CPC Class Codes: H02N 11/006 Motors
• CPC Class Codes: H10K 10/701 Organic molecular electronic devices
• CPC Class Codes: H10N 60/851 Organic superconductors
• CPC Class Codes: Y10S 977/762 Nanowire or quantum wire, i.e. axially elongated structure having two dimensions of 100 nm or less

Abstract

This invention provides new, highly conductive materials comprising crystallized electron pairs within an insulating matrix. Crystallized electron pairs can combine with each other to form quasi-one-dimensional structures, quantum nanowires, that have nanoscale diameters and microscale lengths or longer. Quantum nanowires can also be formed as closed loops. Quantum nanowires comprising crystallized electron pairs exhibit very high electrical conductivity over a range of temperatures from 0 Kelvins up to the decomposition temperature of the materials. The quantum nanowires of this invention can be used in a variety of electronic, opto-electronic, electro-optical, motive, sensing and other ways to provide nanoscale structures for manufacturing small devices having low power requirements, low energy dissipation and very rapid responses.

Claims

1. A conductive material comprising:

at least two crystallized electron pairs; and

a matrix comprising positive charges, each of said crystallized electron pairs having charge −

2e and spin 1.

2. A method for producing a conductive material, comprising the steps of:

(a) forming an initial molecular medium comprising chemical precursors of a charge transfer complex;

(b) adding a doping agent;

(c) permitting said precursors and said doping agent to form a charge transfer complex having at least one positively charged group and at least one negatively charged group, said positively charged group close to said negatively charged group, forming at least one charge transfer complex in a matrix; and

(d) separating said positively charged group and said negatively charged group.