Device for measuring the strength of a vector component of a magnetic field, current-measuring device and use of a field-effect transistor

• US 20030071616A1
• Filed: 09/09/2002
• Published: 04/17/2003
• Est. Priority Date: 09/08/2001
• Status: Active Grant

• Current Assignee: Robert Bosch GmbH
• Original Assignee: Robert Bosch GmbH
• Inventors: Hauenstein, Henning
• Granted Patent: US 6,744,250 B2
• Time in Patent Office: Days
• US Class Current: 324/252
• CPC Class Codes: G01R 15/20 using galvano-magnetic devices, e.g. Hall-effect devices , i.e. measuring a magnetic field via the interaction between a current and a magnetic field, e.g. magneto resistive or Hall effect devices
• CPC Class Codes: G01R 33/06 using galvano-magnetic devices
• CPC Class Codes: G01R 33/07 Hall effect devices
• CPC Class Codes: H01L 29/4238 characterised by the surface lay-out
• CPC Class Codes: H01L 29/7803 structurally associated with at least one other device assemblies H01L25/00; integrated circuits H01L27/00
• CPC Class Codes: H01L 29/7809 having both source and drain contacts on the same surface, i.e. Up-Drain VDMOS transistors
• CPC Class Codes: H01L 29/7813 with trench gate electrode, e.g. UMOS transistors trench gate electrodes per se H01L29/4236
• CPC Class Codes: H01L 29/82 controllable by variation of the magnetic field applied to the device
• CPC Class Codes: H10B 61/00 Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
• CPC Class Codes: H10N 59/00 Integrated devices, or assemblies of multiple devices, comprising at least one galvanomagnetic or Hall-effect element covered by groups H10N50/00 - H10N52/00 MRAM devices H10B61/00

Abstract

A device for measuring the strength of a vector component of a magnetic field, a current-measuring device and a use of a field-effect transistor are proposed, the orientation of the wall of the at least one first trench gate being provided orthogonally with respect to the magnetic-field vector component to be measured.

Claims

1. A device for measuring a strength of a vector component of a magnetic field, comprising:

a field-effect transistor including at least one first trench gate, an orientation of a wall of the at least one first trench gate being provided orthogonally with respect to the vector component.

2. The device as recited in claim 1, wherein:

the at least one field-effect transistor includes at least one second trench gate provided at one of an acute angle and an obtuse angle with respect to the vector component,

the at least one field-effect transistor includes a first source connection allocated to the at least one first trench gate, one first drain connection allocated to the at least one first trench gate, one second source connection allocated to the at least one second trench gate, and one second drain connection allocated to the at least one second trench gate, and

at least one of the following;

the first source connection and the second source connection are electrically isolated from one another, and

the first drain connection and the second drain connection are electrically isolated from one another.

3. The device as recited in claim 1, wherein:

the at least one first trench gate includes a plurality of first trench gates,

the magnetic field is at least locally curved, and

walls of the first trench gates are parallel to a local curvature of radius of the magnetic field.

4. The device as recited in claim 1, wherein:

the at least one first trench gate includes a plurality of first trench gates, and

walls of the plurality of first trench gates are oriented parallel to one another.

5. The device as recited in claim 1, wherein:

the at least one first trench gate includes a plurality of first trench gates, and

walls of the first trench gates are oriented in such a way that imaginary straight extensions of the walls intersect at a common point.

6. A current-measuring device for measuring an electric current intensity of an electric current in a conductor, the electric current producing a magnetic field, the device comprising:

a field-effect transistor including at least one first trench gate, an orientation of a wall of the at least one first trench gate being provided orthogonally with respect to a vector component of the magnetic field.

7. A method of using a field-effect transistor having a trench gate for measuring a strength of a vector component of a magnetic field orthogonally with respect to a wall of the trench gate.