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Method of etching conductive layers for capacitor and semiconductor device fabrication

  • US 20030077843A1
  • Filed: 07/31/2002
  • Published: 04/24/2003
  • Est. Priority Date: 07/31/2001
  • Status: Abandoned Application
First Claim
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1. A method of etching a multi-layer film comprising at least one conductive layer and a ferroelectric layer, wherein the method comprises:

  • forming a hard mask layer on one of the at least one conductive layer; and

    using the hard mask to etch the at least one conductive layer and the ferroelectric layer.

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