Integrated circuit and manufacturing method therefor
First Claim
Patent Images
1. An integrated circuit comprising:
- a semiconductor substrate of a first conductivity type having an active device region and an inductor region that is apart from said active device region;
a semiconductor layer of said first conductivity type disposed on said semiconductor substrate, said semiconductor layer having a lower resistivity than said semiconductor substrate;
an active device disposed on a surface of said semiconductor layer in said active device region;
an insulating film disposed on said semiconductor layer so as to cover said active device;
an inductor disposed on said insulating film in said inductor region; and
a first layer of the first conductivity type locally disposed between said semiconductor layer and said semiconductor substrate in said active device region, said first layer having a lower resistivity than said semiconductor layer.
4 Assignments
0 Petitions
Accused Products
Abstract
An integrated circuit is manufactured by providing a P− or P−− type semiconductor substrate with a resistivity of 10 to 1000 Ω·cm, disposing a CMOS on top of the semiconductor substrate, depositing an insulating film with several wirings embedded therein over the CMOS, and disposing an inductor on top of the insulating film in a region that is apart from where the CMOS is positioned. A p+ type diffused layer with a resistivity of about 0.01 Ω·cm is disposed between the semiconductor substrate and the CMOS.
-
Citations
17 Claims
-
1. An integrated circuit comprising:
-
a semiconductor substrate of a first conductivity type having an active device region and an inductor region that is apart from said active device region;
a semiconductor layer of said first conductivity type disposed on said semiconductor substrate, said semiconductor layer having a lower resistivity than said semiconductor substrate;
an active device disposed on a surface of said semiconductor layer in said active device region;
an insulating film disposed on said semiconductor layer so as to cover said active device;
an inductor disposed on said insulating film in said inductor region; and
a first layer of the first conductivity type locally disposed between said semiconductor layer and said semiconductor substrate in said active device region, said first layer having a lower resistivity than said semiconductor layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
-
-
10. A manufacturing method for an integrated circuit, comprising the steps of:
-
locally forming a first layer of a first conductivity type on a semiconductor substrate of the first conductivity type in an active device region of said semiconductor substrate, said first layer having a lower resistivity than said semiconductor substrate;
depositing a semiconductor layer of the first conductivity type over said semiconductor substrate and said first layer, said semiconductor layer having a resistivity lower than that of said semiconductor substrate but higher than that of said first layer;
disposing an active device on the surface of said semiconductor layer in an active device region;
depositing an insulating film over said active device; and
disposing an inductor on said insulating film in an inductor region that is apart from said active device region. - View Dependent Claims (11, 12, 16, 17)
-
-
13. A manufacturing method for an integrated circuit, comprising the steps of:
-
forming a second layer of a first conductivity type on a semiconductor substrate of the first conductivity type, said second layer having a lower resistivity than said semiconductor substrate;
locally implanting impurities of the first conductivity type into an active device region of said second layer to cause a part of said second layer to become a first layer of the first conductivity type, said first layer having a lower resistivity than said second layer;
depositing a semiconductor layer of the first conductivity type over said first layer and said second layer, said semiconductor layer having a resistivity lower than that of said semiconductor substrate but higher than that of said second layer;
disposing an active device on the surface of said semiconductor layer in said active device region;
depositing an insulating film over said active device; and
disposing an inductor on said insulating film in an inductor region of said second layer that is apart from said active device region. - View Dependent Claims (14, 15)
-
Specification