Method of cleaning cvd device and cleaning device therefor
First Claim
1. A method of cleaning a CVD apparatus wherein, a reactive gas is fed into a reaction chamber, a deposited film is formed on a surface of base material disposed in the reaction chamber, said method comprises:
- converting a fluorinated cleaning gas containing a fluorcompound to plasma by means of a remote plasma generator after the deposited film formation on the base material surface by the use of the CVD apparatus, and introducing the cleaning gas having been converted to plasma into the reaction chamber to thereby remove any by-products sticking to inner parts of the reaction chamber.
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Accused Products
Abstract
A cleaning method for CVD apparatus wherein by-products such as SiO2 and Si3N4 adhered to and deposited on surfaces of the inner wall, electrodes and other parts of a reaction chamber at the stage of film formation can be removed efficiently. Furthermore, the amount of cleaning gas discharged is so small that the influence on environment such as global warming is little and cost reduction can be also attained. After the film formation on a base material surface by the use of CVD apparatus, a fluorinated cleaning gas containing a fluorcompound is converted to plasma by means of a remote plasma generator, and the cleaning gas having been converted to plasma is introduced into a reaction chamber so that any by-products adhered to inner parts of the reaction chamber is removed.
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Citations
18 Claims
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1. A method of cleaning a CVD apparatus wherein, a reactive gas is fed into a reaction chamber, a deposited film is formed on a surface of base material disposed in the reaction chamber, said method comprises:
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converting a fluorinated cleaning gas containing a fluorcompound to plasma by means of a remote plasma generator after the deposited film formation on the base material surface by the use of the CVD apparatus, and introducing the cleaning gas having been converted to plasma into the reaction chamber to thereby remove any by-products sticking to inner parts of the reaction chamber. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A cleaning device for CVD apparatus, the CVD apparatus being a plasma CVD apparatus wherein a reactive gas is fed into a reaction chamber, a deposited film is formed on a surface of base material disposed in the reaction chamber, said cleaning device comprises:
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a remote plasma generator capable of converting a fluorinated cleaning gas containing a fluorocompound to plasma after the deposited film formation on the base material surface by the use of the plasma CVD apparatus; and
a cleaning gas introduction path for introducing the cleaning gas having been converted to plasma by means of the remote plasma generator into the reaction chamber, so that by-products adhered to inner parts of the reaction chamber are removed by the cleaning gas having been introduced into the reaction chamber. - View Dependent Claims (11, 12, 13, 14, 15, 16, 17, 18)
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Specification