Protection of dielectric window in inductively coupled plasma generation
First Claim
1. A method of protecting a dielectric window in the wall of a plasma processing chamber from deposits of material from within the processing chamber in which a semiconductor wafer is being processed, the method comprising:
- providing a replaceable wafer of the same material as the semiconductor wafer being processed inside of the chamber and replaceably mounted in close proximity to the window so as to protect the window from deposits of material from within the chamber.
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Accused Products
Abstract
To protect a dielectric window in an inductively coupled plasma reactor from depositions of coating or etched material from the plasma, a dielectric insert is placed inside of the chamber closely adjacent the window. Where a slotted shield inside of the window protects the window from deposition, but has slots through which some material can pass in a direction toward the window, the insert is placed between the window and the shield. The insert is formed of a material that is compatible with the process being carried out on a semiconductor wafer within the chamber. Where the window and shield are planar, an unprocessed wafer of the same type and material as the wafer being processed is used for the insert.
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Citations
8 Claims
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1. A method of protecting a dielectric window in the wall of a plasma processing chamber from deposits of material from within the processing chamber in which a semiconductor wafer is being processed, the method comprising:
providing a replaceable wafer of the same material as the semiconductor wafer being processed inside of the chamber and replaceably mounted in close proximity to the window so as to protect the window from deposits of material from within the chamber. - View Dependent Claims (2, 3)
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4. A method of protecting a dielectric window, in the wall of a plasma processing chamber through which energy is inductively coupled from an antenna outside of the chamber into a plasma within the chamber, from deposits of material from the processing chamber through slots in a protective shield that is spaced from the window inside of the chamber, the method comprising:
providing a replaceable dielectric insert between the window and the shield. - View Dependent Claims (5, 6)
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7. A semiconductor wafer processing apparatus comprising:
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a vacuum chamber bounded by a chamber wall having a dielectric window therein;
an RF source located outside of the window and configured to inductively couple energy into the chamber through the window to sustain an inductively coupled plasma in the chamber;
a slotted shield located inside of the chamber, close to and spaced from the window, so as to substantially prevent material from inside the chamber from forming a continuous layer covering the window; and
a replaceable dielectric insert located between the window and the shield so as to block material moving through slots in the shield toward the window from being deposited onto the window. - View Dependent Claims (8)
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Specification