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Diode having vertical structure and method of manufacturing the same

  • US 20030080344A1
  • Filed: 10/26/2001
  • Published: 05/01/2003
  • Est. Priority Date: 10/26/2001
  • Status: Active Grant
First Claim
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1. A light emitting diode comprising:

  • a conductive layer;

    an n-GaN layer on the conductive layer;

    an active layer on the n-GaN layer;

    a p-GaN layer on the active layer; and

    a p-electrode on the p-GaN layer;

    wherein the conductive layer is an n-electrode.

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