Method for increasing the dielectric strength of isolated base integrated circuits used with variable frequency drives

• US 20030081384A1
• Filed: 10/31/2001
• Published: 05/01/2003
• Est. Priority Date: 10/31/2001
• Status: Active Grant

• Current Assignee: Baker Hughes Incorporated (Baker Hughes Company)
• Original Assignee: Baker Hughes Incorporated (Baker Hughes Company)
• Inventors: Raynor, Vester Ray, Rider, Jerald Ray
• Granted Patent: US 6,625,027 B2
• Time in Patent Office: Days
• US Class Current: 361/704
• CPC Class Codes: H01L 25/072 the devices being arranged next to each other
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H05K 7/20509 Multiple-component heat spreaders; Multi-component heat-conducting support plates; Multi-component non-closed heat-conducting structures

Abstract

A heat sink structure increasing the dielectric strength of isolation for power integrated circuits is formed from a common layer on which laterally spaced isolated layers for each individual integrated circuit are mounted. At least the isolated layers are formed of anodized aluminum coated with aluminum oxide on exterior surfaces. The aluminum and aluminum oxide of the isolated layers provide good thermal conduction for heat dissipation while the electric isolation from the common electric potential of the common layer is improved, at least in part, by increasing the distance between the integrated circuits and the common layer. The heat sink structure may be mounted within a weatherproof enclosure with one externally exposed surface for heat dissipation.

Claims

1. A power electronics heat sink structure, comprising:

a common thermally conductive layer; and

a plurality of isolated thermally conductive layers each mounted over a surface of the common layer, each isolated layer including a dielectric material over at least a surface nearest the common layer and an opposite surface over which a power electronics integrated circuit device is to be mounted.

2. The power electronics heat sink structure according to claim 1, wherein the isolated layers are laterally isolated from each other.

3. The power electronics heat sink structure according to claim 1, wherein the common layer comprises aluminum and the isolated layers comprise anodized aluminum coated with aluminum oxide on exterior surfaces.

4. The power electronics heat sink structure according to claim 1, wherein the isolated layers increase the dielectric strength of electrical isolation for power electronics integrated circuit devices mounted thereon at least in part by increasing a distance between the respective power electronics integrated circuit device and a common electric potential.

5. The power electronics heat sink structure according to claim 1, wherein the dielectric material comprises a dielectric coating over exterior surfaces of the isolated layers.

6. The power electronics heat sink structure according to claim 1, wherein the common layer is adapted for mounting within an enclosure with at least a portion of one surface partially exposed for heat dissipation.

7. The power electronics heat sink structure according to claim 1, wherein the at least partially exposed surface of the common layer is a surface opposite the surface over which the plurality of isolated layers are mounted.

8. A power system for borehole production, comprising:

an electric drive including connections for coupling to a power source and producing electric power for artificial lift equipment within a borehole;

a plurality of power electronics integrated circuits coupled between the power source and the electric drive; and

a heat sink structure on which the power electronics integrated circuits are mounted, the heat sink structure comprising;

a common thermally conductive layer; and

a plurality of isolated thermally conductive layers each mounted over a surface of the common layer, each isolated layer including a dielectric material over at least a surface nearest the common layer and an opposite surface over which one of the power electronics integrated circuit device is mounted.

9. The power system according to claim 8, wherein the isolated layers are laterally isolated from each other.

10. The power system according to claim 8, wherein the common layer comprises aluminum and the isolated layers comprise anodized aluminum coated with aluminum oxide on exterior surfaces.

11. The power system according to claim 8, wherein the isolated layers increase the dielectric strength of electrical isolation for the power electronics integrated circuit devices mounted thereon at least in part by increasing a distance between the power electronics integrated circuit device and a common electric potential.

12. The power system according to claim 8, wherein the dielectric material comprises a dielectric coating over exterior surfaces of the isolated layers.

13. The power system according to claim 8, wherein the common layer is adapted for mounting within an enclosure with at least a portion of one surface partially exposed for heat dissipation.

14. The power system according to claim 8, wherein the at least partially exposed surface of the common layer is a surface opposite the surface over which the plurality of isolated layers are mounted.

15. A method of increasing the dielectric strength of electrical isolation for integrated circuits utilized with medium voltage electric drives powering borehole production equipment, comprising:

providing a common thermally conductive layer; and

mounting each of a plurality of isolated thermally conductive layers over a surface of the common layer, each isolated layer including a dielectric material over at least a surface nearest the common layer and an opposite surface; and

mounting each of a plurality of power electronics integrated circuit devices on the opposite surface of one of the plurality of isolated layers.

16. The method according to claim 15, further comprising:

laterally isolating the isolated layers from each other.

17. The method according to claim 15, wherein the common layer comprises aluminum and the isolated layers comprise anodized aluminum coated with aluminum oxide on exterior surfaces.

18. The method according to claim 15, wherein the isolated layers increase the dielectric strength of electrical isolation for the power electronics integrated circuit devices mounted thereon at least in part by increasing a distance between the power electronics integrated circuit device and a common electric potential.

19. The method according to claim 15, wherein the dielectric material comprises a dielectric coating over exterior surfaces of the isolated layers.

20. The method according to claim 15, further comprising:

mounting the common layer within an enclosure with at least a portion of one surface partially exposed for heat dissipation, wherein the at least partially exposed surface of the common layer is a surface opposite the surface over which the plurality of isolated layers are mounted.