Multilayer-film mirrors for use in extreme UV optical systems, and methods for manufacturing such mirrors exhibiting improved wave aberrations

• US 20030081722A1
• Filed: 08/27/2002
• Published: 05/01/2003
• Est. Priority Date: 08/27/2001
• Status: Abandoned Application

• Current Assignee: Nikon Corporation
• Original Assignee: Nikon Corporation
• Inventors: Yamamoto, Masaki, Komatsuda, Hideki, Sugisaki, Katsumi, Ishiyama, Wakana, Shiraishi, Masayuki, Kandaka, Noriaki, Murakami, Katsuhiko
• Application Number:
  US10/229,638
• Publication Number:
  US 20030081722A1
• Time in Patent Office: Days
• US Class Current: 378/70
• CPC Class Codes: B82Y 10/00 Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
• CPC Class Codes: G02B 27/46 Systems using spatial filters
• CPC Class Codes: G02B 5/0891 Ultraviolet [UV] mirrors apparatus for microlithography exposure G03F7/70; X-ray multilayer structures G21K1/06
• CPC Class Codes: G03F 7/70258 Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
• CPC Class Codes: G03F 7/70316 Details of optical elements, e.g. of Bragg reflectors, extreme ultraviolet [EUV] multilayer or bilayer mirrors or diffractive optical elements
• CPC Class Codes: G03F 7/706 Aberration measurement
• CPC Class Codes: G21K 1/062 Devices having a multilayer structure
• CPC Class Codes: G21K 2201/067 Construction details
• CPC Class Codes: H01J 37/304 Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
• CPC Class Codes: H01J 37/3056 for microworking, e. g. etching of gratings or trimming of electrical components
• CPC Class Codes: Y10T 428/24802 Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]

Abstract

Methods are disclosed for correcting the wave aberrations of light reflected from multilayer-film mirrors as used in, e.g., optical systems as used for EUV lithography (EUVL) apparatus. Wave aberrations are corrected by addition and/or removal of one or more layers (typically layer-sets) to and from, respectively, the surface of the multilayer film of the mirror. In certain embodiments, layer-removal is monitored in situ by any of several techniques. In other embodiments, mirror substrates are processed to a prescribed shape precision and surface roughness, followed by formation of the multilayer film and assembly of the mirrors into the intended optical assembly. The wave aberration is measured at operating wavelength. If the measured wave aberration is not within specifications, then the mirrors are corrected individually by selective removal and/or addition of layer-set(s). The corrected mirrors are reassembled and re-tested as an optical assembly. This cycle is repeated as required. In other embodiments, the mirrors are corrected by removing layer-sets in layer-set increments, followed by re-formation, at less than normal layer thickness, of the layer of the material having the most impact on defining the reflection wave-front, until the desired layer thickness is achieved. In yet other embodiments, layer(s) are removed such that the resulting corrected reflection wave-front is smooth.

Claims

1. An apparatus for removing one or more surficial layers of a multilayer film on a multilayer-film mirror so as to correct a reflection wave-front produced by the multilayer-film mirror, the multilayer film comprising multiple alternating layers of at least a first layer-material and a second layer-material having mutually different refractive indices with respect to a prescribed wavelength, the apparatus comprising:

a layer-removal device situated and configured to remove at least a respective portion of one or more surficial layers of the multilayer film; and

an analysis device situated and configured to analyze at least one of the removed layer-materials.

2. The apparatus of claim 1, wherein the layer-removal device comprises an ion-beam-irradiation device situated and configured to direct a layer-ablating ion beam at a selected region of the surficial layer.

3. The apparatus of claim 1, wherein the analysis device analyzes the at least one layer-material as the respective layer is being removed.

4. The apparatus of claim 1, wherein the analysis device analyzes the at least one layer-material after the respective layer has been removed.

5. The apparatus of claim 1, wherein the analysis device comprises a mass analyzer.

6. The apparatus of claim 1, wherein the analysis device is configured to measure a surface-distribution of the layer materials.

7. The apparatus of claim 1, wherein the analysis device is a photoelectron spectrometer or Auger-electron spectrometer.

8. The apparatus of claim 1, wherein the analysis device comprises at least one ellipsometer.

9. The apparatus of claim 1, wherein the analysis device is configured to detect a difference in reflectivity of the multilayer-film surface to infrared, visible, or ultraviolet light.

10. The apparatus of claim 1, further configured to control a rate or extent of layer removal based upon data provided by the analysis device.

11. A method for removing one or more surficial layers of a multilayer film on a multilayer-film mirror so as to correct a reflection wave-front produced by the multilayer-film mirror, the multilayer film comprising multiple alternating layers of at least a first layer-material and a second layer-material formed at a prescribed period length on a reflective surface of a mirror substrate, the first and second layer-materials having mutually different refractive indices with respect to a prescribed wavelength of incident light, the method comprising:

removing at least a respective portion of one or more surficial layers of the multilayer film; and

analyzing at least one of the removed layer-materials.

12. The method of claim 11, wherein the layer-removal step is performed by directing a layer-ablating ion beam at a selected region of the surficial layer.

13. The method of claim 11, wherein the analyzing step is performed as the respective layer is being removed.

14. The method of claim 11, wherein the analyzing step is performed after the respective layer has been removed.

15. The method of claim 11, wherein:

the layer-removal step is performed by directing a layer-ablating ion beam, in a vacuum environment, at a selected region of the surficial layer; and

the analyzing step is performed in real time on volatile products produced by ablation of the respective layer.

16. The method of claim 11, wherein the analyzing step comprises performing a mass analysis of matter removed from the surface of the multilayer film.

17. The method of claim 11, wherein the analyzing step comprises obtaining a photoelectron spectrogram or Auger-electron spectrogram of the surface of the multilayer film.

18. The method of claim 11, wherein the analyzing step comprises performing an ellipsometric analysis of the surface of the multilayer film.

19. The method of claim 11, wherein the analyzing step comprises obtaining a differential reflectivity profile of the surface of the multilayer film to infrared, visible, or ultraviolet light.

20. A multilayer-film mirror, produced by a method as recited in claim 11.

21. An EUV optical system, comprising a multilayer-film mirror as recited in claim 20.

22. An EUV lithography apparatus, comprising an EUV optical system as recited in claim 21.

23. An EUV lithography apparatus, comprising:

an EUV source that produces an EUV beam;

an illumination-optical system situated optically downstream of the EUV source and configured to guide the EUV beam from the EUV source to a pattern-defining reticle; and

a projection-optical system situated optically downstream of the reticle and configured to guide the EUV beam from the reticle to a sensitive substrate;

wherein at least one of the illumination-optical system, the reticle, and the projection-optical system comprises a multilayer-film mirror as recited in claim 20.

99. In a method for manufacturing a microelectronic device, a microlithography step, comprising:

applying a resist to a surface of a lithographic substrate on which the microelectronic devices are formed; and

transfer-exposing a pattern from a reticle to a location on the lithographic substrate using an EUV lithography apparatus as recited in claim 23.

100. In a method for manufacturing a microelectronic device, a microlithography step, comprising:

applying a resist to a surface of a lithographic substrate on which the microelectronic devices are formed; and

transfer-exposing a pattern from a reticle to a location on the lithographic substrate using an EUV lithography apparatus as recited in claim 23.

108. A microelectronic device, produced by a method as recited in claim 99.

24. A method for producing a multilayer-film mirror for use with a prescribed wavelength of incident light, the method comprising:

forming a reflection surface on a mirror substrate;

forming a multilayer film on the reflection surface by forming a stacked laminate of multiple alternating layers of at least a first layer-material and a second layer-material at a prescribed period length suitable for rendering the reflection surface reflective to the incident light, the first and second layer-materials having mutually different refractive indices with respect to the prescribed wavelength;

measuring a profile of a reflected wave-front produced by reflection of the incident light from the multilayer film;

based on the measured profile of the reflected wave-front, directing a layer-removal force locally to the multilayer film so as to remove, at one or more specified locations on the multilayer film, at least a portion of a surficial layer of the multilayer film so as to reduce an aberration of the reflected wave-front;

detecting the respective layer-material removed from the specified location; and

based upon the detected removal of layer-material, controlling an amount of layer-material removed from the specified location to achieve a desired reduction of wave aberration of the reflected light.

25. The method of claim 24, wherein:

the step of directing a layer-removal force comprises directing a layer-ablating ion beam, in a vacuum environment, at a selected region of the surface of the multilayer film; and

the detecting step is performed in real time on volatile products produced by ablation of the respective layer.

26. A multilayer-film mirror, produced by a method as recited in claim 24.

27. An EUV optical system, comprising a multilayer-film mirror as recited in claim 26.

28. An EUV lithography apparatus, comprising an EUV optical system as recited in claim 27.

29. An EUV lithography apparatus, comprising:

an EUV source that produces an EUV beam;

an illumination-optical system situated optically downstream of the EUV source and configured to guide the EUV beam from the EUV source to a pattern-defining reticle; and

a projection-optical system situated optically downstream of the reticle and configured to guide the EUV beam from the reticle to a sensitive substrate;

wherein at least one of the illumination-optical system, the reticle, and the projection-optical system comprises a multilayer-film mirror as recited in claim 26.

101. In a method for manufacturing a microelectronic device, a microlithography step, comprising:

applying a resist to a surface of a lithographic substrate on which the microelectronic devices are formed; and

transfer-exposing a pattern from a reticle to a location on the lithographic substrate using an EUV lithography apparatus as recited in claim 29.

109. A microelectronic device, produced by a method as recited in claim 101.

30. A method for manufacturing a reflective optical system for use with a prescribed operating wavelength of light, the method comprising:

(a) forming a respective reflection surface on each of multiple mirror substrates;

(b) on each reflection surface, forming a respective multilayer film by forming a stacked laminate of multiple alternating layers of at least a first layer-material and a second layer-material at a prescribed period length suitable for rendering the respective reflection surface reflective to the incident wavelength, the first and second layer-materials having mutually different refractive indices with respect to the prescribed wavelength, thereby forming respective multilayer-film mirrors;

(c) assembling the multilayer-film mirrors into a housing for the optical system;

(d) measuring a wave aberration of the assembled optical system at the operating wavelength;

(e) from the measured wave aberration, computing respective wave-front corrections to be made to the constituent multilayer-film mirrors in the optical system;

(f) as required according to the computed respective wave-front corrections, selectively removing one or more layers from the multilayer-film surface of the respective multilayer-film mirrors so as to correct a reflective-surface profile of the multilayer-film mirror in a manner corresponding to the required respective wave-front correction; and

(g) sequentially repeating steps (e), (f), (c), and (d) as required until the wave aberration of the optical system does not exceed a predetermined specification.

31. The method of claim 30, further comprising the step, between steps (a) and (b), of configuring each mirror substrate to have a respective desired external-shape profile.

32. The method of claim 31, wherein the step of configuring the external-shape profiles of the mirror substrates comprises forming at least one hole or cutout in at least one of the mirror substrates.

33. The method of claim 30, wherein:

in step (b) each multilayer film is formed having a respective number of layer-sets; and

each layer-set comprises a respective layer of the first layer-material and a respective layer of the second layer-material; and

the respective number of layer-sets is greater than a minimum number of layer-sets required to obtain a prescribed reflectivity from the respective multilayer film plus a maximum number of layer-sets that would need to be removed from the respective multilayer film to achieve a respective desired wave-front correction.

34. The method of claim 30, wherein in step (d) the wave aberration is measured at a plurality of wavelengths.

35. The method of claim 30, wherein:

step (e) comprises computing a sum, within an incrementally divided pupil plane of the optical system, of an evaluation function, and computing correction amounts by an optimization routine resulting in minimization of the evaluation function; and

the evaluation function includes differences between a change in optical-path length resulting from correction of the optical system and a corresponding displacement of the measured wave-front from an aberration-free wave-front.

36. The method of claim 30, wherein the corrections calculated in step (d) include parameters relating to relative positions of the multilayer-film layers in the optical system and to respective reflective-surface profiles of the multilayer films of the multilayer-film mirrors.

37. The method of claim 30, wherein the corrections calculated in step (d) include only parameters relating to respective reflective-surface profiles of the multilayer films of the multilayer-film mirrors.

38. The method of claim 30, wherein:

the corrections calculated in step (d) include parameters relating to respective reflective-surface profiles of the multilayer films of the multilayer-film mirrors; and

the parameters relating to the respective reflective-surface profiles are expressed by respective systems of orthogonal functions.

39. The method of claim 38, wherein the orthogonal functions are Zernike polynomials.

40. The method of claim 30, wherein:

step (e) comprises computing correction amounts by an optimization routine resulting in minimization of an evaluation function; and

the optimization routine comprises imposing a limitation that, in step (f), changes in respective reflective-surface profiles of the respective multilayer films are made only by locally removing layers in period-length increments from the multilayer film.

41. The method of claim 30, wherein step (f) comprises, while selectively removing one or more layers from the multilayer-film surface of the respective multilayer-film mirrors, observing an in-plane distribution of layers selectively removed, the observations being made by producing images of the multilayer-film surfaces using visible light or infrared light at a wavelength of 400 nm or more.

42. The method of claim 30, wherein step (f) comprises, while selectively removing one or more layers from the multilayer-film surface of the respective multilayer-film mirrors, performing an in situ monitoring of the removal in real time and using data produced by the monitoring to ensure respective desired amounts of material are removed at the respective desired locations on the multilayer-film surfaces.

43. The method of claim 30, wherein, in at least one of steps (c), (d), and (f), a coordinate-reference mark is used for aligning at least one multilayer-film mirror, the coordinate-reference mark being formed on the reflection surface of the multilayer-film mirror outside an effective reflection region of the multilayer-film mirror.

44. A reflective optical system, produced by a method as recited in claim 30.

45. An EUV optical system, comprising a reflective-optical system as recited in claim 44.

46. An EUV lithography apparatus, comprising the EUV optical system recited in claim 45.

47. A multilayer-film mirror, comprising:

a mirror substrate defining a reflection surface;

a multilayer film formed on the reflection surface, the multilayer film defining an effective region intended to be a region from which light of a desired wavelength is reflected from the multilayer-film mirror; and

a coordinate-reference mark situated outside the effective region.

48. The multilayer-film mirror of claim 47, wherein the reflection surface is aspheric.

49. The multilayer-film mirror of claim 47, configured to reflect EUV radiation incident at the effective region.

50. An EUV optical system, comprising a multilayer-film mirror as recited in claim 49.

51. An EUV lithography apparatus, comprising an EUV optical system as recited in claim 50.

52. An EUV lithography apparatus, comprising:

an EUV source that produces an EUV beam;

an illumination-optical system situated optically downstream of the EUV source and configured to guide the EUV beam from the EUV source to a pattern-defining reticle; and

a projection-optical system situated optically downstream of the reticle and configured to guide the EUV beam from the reticle to a sensitive substrate;

wherein at least one of the illumination-optical system, the reticle, and the projection-optical system comprises a multilayer-film mirror as recited in claim 49.

102. In a method for manufacturing a microelectronic device, a microlithography step, comprising:

applying a resist to a surface of a lithographic substrate on which the microelectronic devices are formed; and

transfer-exposing a pattern from a reticle to a location on the lithographic substrate using an EUV lithography apparatus as recited in claim 52.

110. A microelectronic device, produced by a method as recited in claim 102.

53. A method for manufacturing a multilayer-film mirror, comprising:

forming a first multilayer film on a surface of a mirror substrate, the first multilayer film having a prescribed period length and being formed by laminating multiple layer-sets each comprising alternating respective layers of at least two types of substances having mutually different refractive indices for a wavelength of light with which the mirror is to be used;

obtaining a profile of a reflected wave-front produced by reflection of the light from a surface of the first multilayer film, and identifying from the profile a wave aberration requiring reduction; and

based on the obtained profile, laminating to selected regions of the surface of the first multilayer film at least one layer-set of a second multilayer film, so as to correct the wave aberration.

54. The method of claim 53, wherein the second multilayer film has a period length substantially equal to the period length of the first multilayer film.

55. The method of claim 53, wherein the step of laminating the second multilayer film comprises:

situating a mask between the first multilayer film and a source of the second multilayer film, the mask defining at least one aperture corresponding to a selected region on the first multilayer film at which the at least one layer-set of the second multilayer film is-to be laminated; and

using the mask as a guide, laminating the at least one layer set of the second multilayer film on the surface of the first multilayer film.

56. The method of claim 53, wherein the step of laminating the second multilayer film comprises:

situating a mask between the first multilayer film and a source of the second multilayer film, the mask defining at least a portion of a selected region on the first multilayer film at which the at least one layer-set of the second multilayer film is to be laminated; and

while moving the mask and using the moving mask as a guide, laminating the at least one layer set of the second multilayer film on the surface of the first multilayer film.

57. The method of claim 56, wherein the mask is moved by rotating the mask.

58. The method of claim 53, wherein the step of laminating the second multilayer film comprises forming the second multilayer film at the selected regions by photo-CVD.

59. The method of claim 53, wherein the step of laminating the second multilayer film comprises:

forming a resist layer on the surface of the first multilayer film, the resist being patterned so as to define at least a portion of a selected region on the first multilayer film at which the at least one layer-set of the second multilayer film is to be laminated; and

using the patterned resist layer as a mask, laminating the at least one layer set of the second multilayer film on the surface of the first multilayer film.

60. The method of claim 53, wherein lamination of the second multilayer film comprises:

during lamination of the second multilayer film at the selected locations, monitoring said lamination in situ; and

based on data produced by the in situ monitoring, halting further lamination of the second multilayer film when a desired lamination amount is reached.

61. A multilayer-film mirror, manufactured according to a method as recited in claim 53.

62. An EUV optical system, comprising a multilayer-film mirror as recited in claim 61.

63. An EUV lithography apparatus, comprising an EUV optical system as recited in claim 62.

64. An EUV lithography apparatus, comprising:

an EUV source that produces an EUV beam;

an illumination-optical system situated optically downstream of the EUV source and configured to guide the EUV beam from the EUV source to a pattern-defining reticle; and

a projection-optical system situated optically downstream of the reticle and configured to guide the EUV beam from the reticle to sensitive substrate;

wherein at least one of the illumination-optical system, the reticle, and the projection-optical system comprises a multilayer-film mirror as recited in claim 53.

103. In a method for manufacturing a microelectronic device, a microlithography step, comprising:

applying a resist to a surface of a lithographic substrate on which the microelectronic devices are formed; and

transfer-exposing a pattern from a reticle to a location on the lithographic substrate using an EUV lithography apparatus as recited in claim 64.

111. A microelectronic device, produced by a method as recited in claim 103.

65. A method for manufacturing a multilayer-film mirror, comprising:

forming a first multilayer film on a surface of a mirror substrate, the first multilayer film having a prescribed period length and being formed by laminating multiple layer-sets each comprising alternating respective layers of at least two types of substances having mutually different refractive indices for a wavelength of light with which the mirror is to be used;

obtaining a profile of a reflected wave-front produced by reflection of the light from a surface of the first multilayer film, and identifying from the profile a wave aberration requiring reduction; and

based on the obtained profile, (i) removing at least one layer-set from selected locations of the surface of the first multilayer film and (ii) laminating to selected regions of the surface of the first multilayer film at least one layer-set of a second multilayer film, so as to correct the wave aberration.

66. The method of claim 65, wherein the second multilayer film has a period length substantially equal to the period length of the first multilayer film.

67. The method of claim 65, wherein lamination of the second multilayer film comprises:

during lamination of the second multilayer film at the selected locations, monitoring said lamination in situ; and

based on data produced by the in situ monitoring, halting further lamination of the second multilayer film when the in situ monitoring has revealed that a desired lamination amount is reached.

68. The method of claim 65, wherein removing at least one layer-set from selected locations of the surface of the first multilayer film comprises:

during removal of the at least one layer-set, monitoring said removal in situ; and

based on data produced by the in situ monitoring, halting further removal of the first multilayer film when the in situ monitoring has revealed that a desired amount thereof has been removed.

69. A multilayer-film mirror, produced according to a method as recited in claim 65.

70. An EUV optical system, comprising a multilayer-film mirror as recited in claim 69.

71. An EUV lithography apparatus, comprising an EUV optical system as recited in claim 70.

72. An EUV lithography apparatus, comprising:

an EUV source that produces an EUV beam;

an illumination-optical system situated optically downstream of the EUV source and configured to guide the EUV beam from the EUV source to a pattern-defining reticle; and

a projection-optical system situated optically downstream of the reticle and configured to guide the EUV beam from the reticle to a sensitive substrate;

wherein at least one of the illumination-optical system, the reticle, and the projection-optical system comprises a multilayer-film mirror as recited in claim 69.

104. In a method for manufacturing a microelectronic device, a microlithography step, comprising:

applying a resist to a surface of a lithographic substrate on which the microelectronic devices are formed; and

transfer-exposing a pattern from a reticle to a location on the lithographic substrate using an EUV lithography apparatus as recited in claim 72.

112. A microelectronic device, produced by a method as recited in claim 104.

73. A multilayer-film mirror, comprising:

a mirror substrate defining a reflection surface;

a first multilayer film formed on the reflective surface, the first multilayer film having a prescribed period length and being formed by laminating multiple layer-sets each comprising alternating respective layers of at least two types of substances having mutually different refractive indices for a wavelength of light with which the mirror is to be used, the first multilayer film having a surface defining at least one location at which a respective portion of at least a topmost layer-set has been removed to reduce a wave aberration of light reflected from the multilayer-film mirror; and

a second multilayer film laminated to at least one selected location on the surface of the first multilayer film, the second multilayer film having a period length substantially equal to the period length of the first multilayer film to correct the reflected wave-front produced by the multilayer-film mirror.

74. The multilayer-film mirror of claim 73, wherein the second multilayer film is laminated to at least one location on the first multilayer film at which a respective portion of at least a topmost layer-set has been removed.

75. An EUV optical system, comprising a multilayer-film mirror as recited in claim 73.

76. An EUV lithography apparatus, comprising an EUV optical system as recited in claim 75.

77. An EUV lithography apparatus, comprising:

an EUV source that produces an EUV beam;

an illumination-optical system situated optically downstream of the EUV source and configured to guide the EUV beam from the EUV source to a pattern-defining reticle; and

a projection-optical system situated optically downstream of the reticle and configured to guide the EUV beam from the reticle to a sensitive substrate;

wherein at least one of the illumination-optical system, the reticle, and the projection-optical system comprises a multilayer-film mirror as recited in claim 73.

105. In a method for manufacturing a microelectronic device, a microlithography step, comprising:

applying a resist to a surface of a lithographic substrate on which the microelectronic devices are formed; and

transfer-exposing a pattern from a reticle to a location on the lithographic substrate using an EUV lithography apparatus as recited in claim 77.

113. A microelectronic device, produced by a method as recited in claim 105.

78. A method for manufacturing a multilayer-film mirror, comprising:

forming a multilayer film on a surface of a mirror substrate, the multilayer film having a prescribed period length and being formed by laminating multiple layer-sets each comprising respective alternating layers of at least a first substance and a second substance, the first substance exhibiting a relatively large difference in respective refractive index to EUV light relative to the refractive index of a vacuum, and the second substance exhibiting a relatively small difference in relative refractive index to EUV light relative to the refractive index of a vacuum;

obtaining a profile of a reflected wave-front produced by reflection of the light from a surface of the multilayer film, and identifying from the profile a wave aberration requiring reduction; and

based on the obtained profile, (i) removing at least one layer-set from at least one selected location on the surface of the multilayer film, so as to leave exposed at the selected location a next layer of the second material, and (ii) laminating to the exposed layer of the second material at the selected location an amount of the first material to a prescribed thickness that is less than a layer thickness of the first material in the multilayer film, so as to reduce the wave aberration.

79. A multilayer-film mirror, manufactured according to a method as recited in claim 78.

80. An EUV optical system, comprising a multilayer-film mirror as recited in claim 79.

81. A multilayer-film mirror, comprising:

a mirror substrate defining a reflection surface;

a multilayer film formed on the reflection surface, the multilayer film having a prescribed period length and comprising multiple laminated layer-sets each comprising respective alternating layers of at least a first substance and a second substance, the first substance exhibiting a relatively large difference in respective refractive index to EUV light relative to the refractive index of a vacuum, and the second substance exhibiting a relatively small difference in relative refractive index to EUV light relative to the refractive index of a vacuum; and

the multilayer film having a surface including a processed region serving to reduce a wave aberration of the multilayer-film mirror by correcting a wave-front reflected from the multilayer film, the processed region including a void formed by selective removal of at least one surficial layer-set of the multilayer film in the region, and a partial-thickness layer of the first material formed on a surface of the second material, the partial-thickness layer having a thickness that is less than a layer thickness of the first material in the multilayer film.

82. The multilayer-film mirror of claim 81, wherein the first substance is molybdenum.

83. The multilayer-film mirror of claim 81, wherein the second substance is silicon.

84. An EUV optical system, comprising a multilayer-film mirror as recited in claim 81.

85. An EUV lithography apparatus, comprising an EUV optical system as recited in claim 84.

86. An EUV lithography apparatus, comprising:

an EUV source that produces an EUV beam;

an illumination-optical system situated optically downstream of the EUV source and configured to guide the EUV beam from the EUV source to a pattern-defining reticle; and

a projection-optical system situated optically downstream of the reticle and configured to guide the EUV beam from the reticle to a sensitive substrate;

wherein at least one of the illumination-optical system, the reticle, and the projection-optical system comprises a multilayer-film mirror as recited in claim 81.

87. A method for manufacturing a multilayer-film mirror, comprising:

forming a multilayer film on a surface of a mirror substrate, the multilayer film having a prescribed period length and being formed by laminating multiple layer-sets each comprising respective alternating layers of at least a first substance and a second substance, the first substance exhibiting a relatively large difference in respective refractive index to EUV light relative to the refractive index of a vacuum, and the second substance exhibiting a relatively small difference in relative refractive index to EUV light relative to the refractive index of a vacuum;

obtaining a profile of a reflected wave-front produced by reflection of the light from a surface of the multilayer film, and identifying from the profile a wave aberration requiring reduction; and

based on the obtained profile, at corresponding locations on a surface of the multilayer film, selectively removing at least one layer-set of the multilayer film in a manner yielding a smoothly connected corrected reflection wave-front.

88. The method of claim 87, wherein, in the corresponding locations, each layer of the first material that is removed is provided with respective edges having a relatively steep inclination, and each layer of the second material that is removed is provided with respective edges having a relatively gentle inclination.

89. The method of claim 87, wherein:

in the corresponding locations, each layer of the first material that is removed is removed at a first removal rate, and each layer of the second material that is removed is removed at a second removal rate; and

a ratio of the first and second removal rates is equal to a ratio of an inverse of a difference between vacuum refractive indices of the respective materials and refractive indices of the materials so that the corrected reflection wave-front produced by a boundary of adjacent layers of the first and second materials is smoothly connected.

90. A multilayer-film mirror, manufactured according to a method as recited in claim 87.

91. An EUV optical system, comprising a multilayer-film mirror as recited in claim 90.

92. An EUV lithography apparatus, comprising an EUV optical system as recited in claim 91.

106. In a method for manufacturing a microelectronic device, a microlithography step, comprising:

applying a resist to a surface of a lithographic substrate on which the microelectronic devices are formed; and

transfer-exposing a pattern from a reticle to a location on the lithographic substrate using an EUV lithography apparatus as recited in claim 87.

114. A microelectronic device, produced by a method as recited in claim 106.

93. A multilayer-film mirror, comprising:

a mirror substrate defining a reflection surface; and

a multilayer film formed on the reflective surface, the multilayer film having a prescribed period length and being formed by laminating multiple layer-sets each comprising respective alternating layers of at least two types of substances having mutually different refractive indices for a wavelength of light with which the mirror is to be used, the multilayer film having a surface defining at least one location at which a respective portion of at least a topmost layer-set has been removed to reduce a wave aberration of light reflected from the multilayer-film mirror, the at least top-most layer-set being removed to yield corresponding layer edges in the location that are configured to produce a smoothly connected corrected reflection wave-front.

94. The multilayer-film mirror of claim 93, wherein, in each corresponding location, each layer of the first material that is removed has respective edges that are relatively steeply inclined, and each layer of the second material that is removed has respective edges that are relatively gently inclined.

95. The multilayer-film mirror of claim 93, wherein, in the corresponding locations, each layer of the first material that is removed has been removed at a first removal rate, and each layer of the second material that is removed has been removed at a second removal rate;

and

a ratio of the first and second removal rates is equal to a ratio of an inverse of a difference between vacuum refractive indices of the respective materials and refractive indices of the materials so that the corrected reflection wave-front produced by a boundary of adjacent layers of the first and second materials is smoothly connected.

96. An EUV optical system, comprising a multilayer-film mirror as recited in claim 93.

97. An EUV lithography apparatus, comprising an EUV optical system as recited in claim 96.

98. An EUV lithography apparatus, comprising:

an EUV source that produces an EUV beam;

an illumination-optical system situated optically downstream of the EUV source and configured to guide the EUV beam from the EUV source to a pattern-defining reticle; and

a projection-optical system situated optically downstream of the reticle and configured to guide the EUV beam from the reticle to a sensitive substrate;

wherein at least one of the illumination-optical system, the reticle, and the projection-optical system comprises a multilayer-film mirror as recited in claim 93.

107. In a method for manufacturing a microelectronic device, a microlithography step, comprising:

applying a resist to a surface of a lithographic substrate on which the microelectronic devices are formed; and

transfer-exposing a pattern from a reticle to a location on the lithographic substrate using an EUV lithography apparatus as recited in claim 98.

115. A microelectronic device, produced by a method as recited in claim 107.