Integration of ALD tantalum nitride and alpha-phase tantalum for copper metallization application
First Claim
1. A method for forming a metal interconnect on a substrate, comprising:
- depositing a refractory metal containing barrier layer having a thickness that exhibits a crystalline like structure and is sufficient to inhibit atomic migration on at least a portion of a metal layer by alternately introducing one or more pulses of a metal-containing compound and one or more pulses of a nitrogen-containing compound;
depositing a seed layer on at least a portion of the barrier layer; and
depositing a second metal layer on at least a portion of the seed layer.
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Abstract
A method for forming a metal interconnect on a substrate is provided. The method includes depositing a refractory metal-containing barrier layer having a thickness less than about 20 angstroms on at least a portion of a metal layer by alternately introducing one or more pulses of a metal-containing compound and one or more pulses of a nitrogen-containing compound. The method also includes depositing a seed layer on at least a portion of the barrier layer, and depositing a second metal layer on at least a portion of the seed layer. The barrier layer provides adequate barrier properties and allows the grain growth of the metal layer to continue across the barrier layer into the second metal layer thereby enhancing the electrical performance of the interconnect.
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Citations
33 Claims
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1. A method for forming a metal interconnect on a substrate, comprising:
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depositing a refractory metal containing barrier layer having a thickness that exhibits a crystalline like structure and is sufficient to inhibit atomic migration on at least a portion of a metal layer by alternately introducing one or more pulses of a metal-containing compound and one or more pulses of a nitrogen-containing compound;
depositing a seed layer on at least a portion of the barrier layer; and
depositing a second metal layer on at least a portion of the seed layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25)
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26. A method for forming a metal interconnect on a substrate, comprising:
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depositing a tantalum nitride barrier layer having a thickness less than about 20 angstroms on at least a portion of a metal layer by alternately introducing one or more pulses of a tantalum-containing compound and one or more pulses of a nitrogen-containing compound;
depositing a dual alloy seed layer; and
depositing a second metal layer on at least a portion of the dual alloy seed layer.
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27. A method for forming a metal interconnect on a substrate, comprising:
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depositing a first metal layer on a substrate surface;
depositing a titanium silicon nitride layer having a thickness less than about 20 angstroms over at least a portion of the first metal layer by alternately introducing one or more pulses of a titanium-containing compound, one or more pulses of a silicon-containing compound, and one or more pulses of a nitrogen-containing compound;
depositing a dual alloy seed layer; and
depositing a second metal layer on at least a portion of the dual alloy seed layer.
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28. A method for forming a metal interconnect on a substrate, comprising:
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depositing a tantalum silicon nitride layer having a thickness less than about 20 angstroms on at least a portion of a metal layer by alternately introducing one or more pulses of a tantalum-containing compound, one or more pulses of a silicon-containing compound, and one or more pulses of a nitrogen-containing compound;
depositing a dual alloy seed layer; and
depositing a second metal layer on at least a portion of the dual alloy seed layer.
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29. A method for forming a metal interconnect on a substrate, comprising:
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depositing a bilayer barrier having a thickness less than about 20 angstroms on at least a portion of a metal layer, the bilayer barrier comprising;
a first layer of tantalum nitride deposited by alternately introducing one or more pulses of a tantalum-containing compound and one or more pulses of a nitrogen-containing compound; and
a second layer of alpha phase tantalum;
depositing a dual alloy seed layer; and
depositing a second metal layer on at least a portion of the dual alloy seed layer.
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30. A method for forming a metal interconnect on a substrate, comprising:
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depositing a first metal layer on a substrate surface;
depositing a tantalum nitride barrier layer having a thickness less than about 20 angstroms on at least a portion of the first metal layer by alternately introducing one or more pulses of a tantalum-containing compound and one or more pulses of a nitrogen-containing compound;
depositing a dual alloy seed layer comprising copper and a metal selected from the group consisting of aluminum, magnesium, titanium, zirconium, tin, and combinations thereof; and
depositing a second metal layer on at least a portion of the dual alloy seed layer. - View Dependent Claims (31, 32, 33)
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Specification