Method of forming low-leakage dielectric layer

• US 20030082884A1
• Filed: 10/26/2001
• Published: 05/01/2003
• Est. Priority Date: 10/26/2001
• Status: Abandoned Application

• Current Assignee: International Business Machines Corporation, Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Original Assignee: International Business Machines Corporation
• Inventors: Faltermeier, Johnathan, Tsuda, Takanori, Imai, Keitaro, Jammy, Rajarao
• Application Number:
  US09/999,824
• Publication Number:
  US 20030082884A1
• Time in Patent Office: Days
• US Class Current: 438/387
• CPC Class Codes: C23C 16/345 Silicon nitride
• CPC Class Codes: C23C 16/45523 Pulsed gas flow or change of composition over time
• CPC Class Codes: H01L 29/66181 Conductor-insulator-semiconductor capacitors, e.g. trench capacitors
• CPC Class Codes: H01L 29/945 Trench capacitors
• CPC Class Codes: H10B 12/0387 Making the trench
• CPC Class Codes: H10B 12/373 the capacitor extending under or around the transistor

Abstract

Two new processes are disclosed for forming a high quality dielectric layer. A first process includes a re-nitridation step following the oxidation of an SiN film in the formation of a dielectric layer. A second process includes a sequential nitridation step to form a SiN film in the formation of a dielectric layer. In a particular embodiment of the second process, sequential ammonia annealing at elevated temperatures is used to bake sequentially deposited thin nitride layers. By using these methods, dielectric films with higher capacitance and lower leakage current have been obtained. The methods described herein have been applied to a deep trench capacitor array, but is equally applicable for other device dielectrics including, but not limited to, stacked capacitor DRAMs.

Claims

1. A method of forming a node dielectric for a capacitor, the method comprising:

a. forming a nitride film on a semiconductor surface;

b. oxidizing at least a portion of the nitride film; and

c. nitriding at least a portion of the oxidized nitride film.

2. The method of claim 1, wherein oxidizing at least a portion of the nitride film comprises oxidizing the film by free radical enhanced rapid thermal oxidation.

3. The method of claim 1, wherein nitriding at least a portion of the oxidized nitride film comprises nitriding the film by at least one of rapid thermal nitridation, remote plasma nitridation and decoupled plasma nitridation.

4. The method of claim 1, wherein forming a nitride film on a semiconductor surface comprises applying a first thin layer of nitride, baking the first thin layer, and applying a second thin layer of nitride.

5. The method of claim 4, wherein forming a nitride film on a semiconductor surface further comprises baking the second thin layer and applying a third thin layer of nitride, and baking the third thin layer of nitride and applying a fourth thin layer of nitride.

6. A method of forming a node dielectric for a capacitor, the method comprising:

a. depositing a first thin nitride film on a semiconductor surface;

b. baking the first thin nitride film at an elevated temperature;

c. depositing a second thin nitride film on the first nitride film; and

d. baking the second thin nitride film at an elevated temperature.

7. The method of claim 6, further comprising:

a. depositing a third thin nitride film on the second nitride film;

b. baking the third thin nitride film at an elevated temperature;

c. depositing a fourth thin nitride film on the third nitride film; and

d. baking the fourth thin nitride film at an elevated temperature.

8. The method of claim 6, further comprising oxidizing at least a portion of at least one thin nitride film after a final thin nitride film is deposited.

9. The method of claim 8, wherein oxidizing at least a portion of at least one nitride film comprises oxidizing the film by free radical enhanced rapid thermal oxidation.

10. The method of claim 9, further comprising nitriding at least a portion of the oxidized nitride film.

11. The method of claim 10, wherein nitriding at least a portion of the oxidized nitride film comprises nitriding the film by at least one of rapid thermal nitridation, remote plasma nitridation and decoupled plasma nitridation.

12. The method of claim 6, wherein baking each of the first and second thin nitride films at an elevated temperature comprises soaking each thin film in ammonia at a temperature of between 500 C. and 1150 C.

13. The method of claim 6, wherein depositing each of the first and second thin nitride films comprises depositing a film having a thickness of approximately 5 Å

.

14. A method of forming a node dielectric for a capacitor, the method comprising:

a. depositing a first thin nitride film on a semiconductor surface;

b. nitriding at least a portion of the first thin nitride film;

c. depositing a second thin nitride film on the nitrided first nitride film; and

d. nitriding at least a portion of the second thin nitride film.

15. The method of claim 14, further comprising:

a. depositing a third thin nitride film on the nitrided second nitride film;

b. nitriding at least a portion of the third thin nitride film;

c. depositing a fourth thin nitride film on the nitrided third nitride film; and

d. nitriding at least a portion of the fourth thin nitride film.

16. The method of claim 14, further comprising oxidizing at least a portion of at least one thin nitride film after a final thin nitride film is deposited.

17. The method of claim 16, further comprising nitriding at least a portion of the oxidized nitride film.

18. The method of claim 17, wherein nitriding at least a portion of the oxidized nitride film comprises nitriding the film by at least one of rapid thermal nitridation, remote plasma nitridation and decoupled plasma nitridation.

19. The method of claim 14, wherein nitriding at least a portion of each of the first and second thin nitride films comprises nitriding each film by at least one of rapid thermal nitridation, remote plasma nitridation and decoupled plasma nitridation.

20. The method of claim 14, wherein depositing each of the first and second thin nitride films comprises depositing a film having a thickness of approximately 5 Å

.