Apparatus for chemical vapor deposition

• US 20030084849A1
• Filed: 10/28/2002
• Published: 05/08/2003
• Est. Priority Date: 11/05/2001
• Status: Active Grant

• Current Assignee: Jusung Engineering Company Limited
• Original Assignee: Jusung Engineering Company Limited
• Inventors: Shim, Kyung-Sik
• Granted Patent: US 7,390,366 B2
• Time in Patent Office: Days
• US Class Current: 118/715
• CPC Class Codes: C23C 16/4401 Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
• CPC Class Codes: C23C 16/45521 the gas, other than thermal contact gas, being introduced the rear of the substrate to flow around its periphery
• CPC Class Codes: C23C 16/4558 Perforated rings

Abstract

An apparatus for CVD is disclosed. Processing gas is injected to an upper center portion of a wafer supporting member by a gas focus ring installed at an inner side surface of a reaction chamber. The processing gas is prevented from coming down to a lower space of the reaction chamber by purge gas supplied from a lower surface of the reaction chamber. Accordingly to this, a particle source is minimized and a period to check an equipment is prolonged. Also, the purge gas is prevented from mounting to an upper space of the reaction chamber by a pressure of the processing gas, thereby not influencing to a process for CVD. The processing gas and the purge gas are exhausted through a gas outlet installed at a lateral wall of the reaction chamber as a ring shaped recess. A shielding layer for preventing the processing gas and the purge gas from being mixed each other is horizontally installed at a middle portion of the gas outlet.

Claims

1. An apparatus for chemical vapor deposition (CVD) comprising:

a reaction chamber for performing a chemical vapor deposition;

a wafer supporting member installed in the reaction chamber for mounting a wafer;

a gas focus ring installed at an inner surface of the reaction chamber for injecting processing gas from a peripheral portion of the wafer supporting member to an upper center portion of the wafer supporting member;

a supplying hole installed at a lower surface of the reaction chamber for supplying purge gas to an inner portion of the reaction chamber;

a ring-shaped gas outlet parallel along a lateral wall of the reaction chamber and located below the gas focus ring for exhausting the processing gas injected through the gas focus ring and the purge gas supplied through the purge gas supplying hole;

one pumping line for connecting the gas outlet and a vacuum pump each other; and

a shielding layer parallel to the gas outlet and located at a middle portion of the gas outlet for preventing the processing gas and the purge gas exhausted through the gas outlet from being mixed at an entrance of the gas outlet.

2. The apparatus for CVD of claim 1, wherein the reaction chamber is formed as a quartz dome at an upper portion thereof, and a bell jar heater for covering the quartz dome is installed at an outer portion of the quartz dome

3. The apparatus for CVD of claim 1, wherein the reaction chamber provided with one wafer supporting member is a single type chamber in which wafers are inserted one by one.

4. The apparatus for CVD of claim 1, wherein the gas outlet is installed at the same height as the wafer supporting member.

5. The apparatus for CVD of claim 1, further comprising a plurality of lower division layers having a larger inner diameter than the shielding layer for horizontally dividing the gas outlet below the shielding layer into a plurality of spaces;

and a plurality of upper division layers having a larger inner diameter than the shielding layer for horizontally dividing the gas outlet above the shielding layer into a plurality of spaces.

6. The apparatus for CVD of claim 5, wherein the plurality of spaces formed by the lower division layers have higher heights toward an upper direction from a lower direction, and the plurality of spaces formed by the upper division layers have higher heights toward a lower direction from an upper direction.

7. The apparatus for CVD of claim 1, wherein the wafer supporting member is provided with a heater therein.