Gas-assisted rapid thermal processing

• US 20030087215A1
• Filed: 11/08/2001
• Published: 05/08/2003
• Est. Priority Date: 11/08/2001
• Status: Active Grant

• Current Assignee: Woo Sik Yoo
• Original Assignee: Woo Sik Yoo
• Inventors: Yoo, Woo Sik
• Granted Patent: US 6,887,803 B2
• Time in Patent Office: Days
• US Class Current: 432/58
• CPC Class Codes: F27B 17/0025 Especially adapted for treating semiconductor wafers
• CPC Class Codes: H01L 21/67109 mainly by convection

Abstract

A system, method and apparatus for processing a semiconductor device including a processing chamber and a heating assembly positioned within the processing chamber. The heating assembly including at least a plate defining an internal cavity configured to receive gas. The gas enters the internal cavity through a first passage at a first temperature, and exits the internal cavity at a second temperature through a second passage.

Claims

1. A system for processing a semiconductor device, the system comprising:

a processing chamber; and

a first plate positioned within said processing chamber and defining a first internal cavity configured to receive a first gas through a first passage into said first internal cavity at a first temperature and to emit said first gas from said first internal cavity at a second temperature through a second passage.

2. The system of claim 1, further comprising a second plate disposed adjacent to said first plate, wherein said second plate defines a second internal cavity configured to receive a second gas through a first passage into said second internal cavity at a first temperature and to emit said gas from said second internal cavity at a second temperature through a second passage.

3. The system of claim 2, wherein said second passages comprise a plurality of holes defined on a surface of said first and said second plates.

4. The system of claim 2, wherein said first plate and said second plate comprises a heat source for heating said plate to a preselected temperature.

5. The system of claim 1, wherein said first gas is taken from the group consisting of N₂, He, H₂, O₂, Ar and gas mixtures containing He, H₂, O₂, Ar and N₂.

6. The system of claim 1, wherein said internal cavity further comprises a buffer to disperse said first gas throughout said internal cavity.

7. A system for wafer processing comprising:

a chamber; and

at least one heatable plate positionable within said chamber, including;

an internal cavity defining an internal wall and configured to receive a gas;

means for heating said internal wall to a preselected temperature; and

an outlet portion defining a plurality of holes for emitting said gas.

8. The system of claim 7, wherein said at least one heatable plate comprises a first heatable plate and a second heatable plate disposed having adjacent surfaces configured to receive a wafer therebetween.

9. The system of claim 7, wherein said gas is taken from the group consisting of He, H₂, O₂, Ar, N₂ and gas mixtures containing He, H₂, O₂, Ar, and N₂.

10. The system of claim 7, wherein said internal cavity further comprises a buffer to disperse said first gas throughout said internal cavity.

11. A method for processing a semiconductor device, the method comprising:

providing a first heatable member including;

an internal cavity defining an internal wall;

means for heating said internal wall to a preselected temperature; and

an outlet portion defining a plurality of holes;

introducing a gas into said internal cavity of said first heatable member;

heating said gas substantially to said preselected temperature; and

impinging a surface of a semiconductor wafer with said heated gas to change the temperature of said semiconductor wafer.

12. The method of claim 11, wherein heating said gas substantially to said preselected temperature comprises heating said internal wall with a resistance heating element to said preselected temperature.