Inductively coupled plasma source for improved process uniformity

• US 20030087488A1
• Filed: 11/07/2002
• Published: 05/08/2003
• Est. Priority Date: 11/07/2001
• Status: Abandoned Application

• Current Assignee: Tokyo Electron Limited
• Original Assignee: Tokyo Electron Limited
• Inventors: Fink, Steven T., Sosnowski, Janusz
• Application Number:
  US10/289,389
• Publication Number:
  US 20030087488A1
• Time in Patent Office: Days
• US Class Current: 438/200
• CPC Class Codes: H01J 37/321 the radio frequency energy being inductively coupled to the plasma

Abstract

An improved apparatus for material processing, wherein the improved apparatus including a plasma processing system to process a substrate, the plasma processing system including a process chamber, a substrate holder, and a plasma source. The plasma source further includes an inductive coil assembly for inductively coupling RF power to plasma wherein the inductive coil assembly is arranged within a process chamber. The inductive coil assembly includes an inner conductor, a slotted outer conductor, and a dielectric layer. The inductive coil assembly can further include a second dielectric layer in order to protect the slotted outer conductor from plasma. The inner conductor is surrounded by the slotted outer conductor and, between which, resides the first dielectric layer. The second dielectric layer encapsulates the inner conductor, first dielectric layer and the slotted outer conductor.

Claims

1. An apparatus for material processing, the apparatus comprising

process chamber,

substrate holder, and

plasma source, said plasma source comprising at least one inductive coil assembly arranged within said process chamber, wherein said at least one inductive coil assembly comprises an inner conductor, a slotted outer conductor, and a dielectric layer.

2. The apparatus according to claim 1, wherein said at least one inductive coil assembly further comprises a second dielectric layer coupled to said outer conductor.

3. The apparatus according to claim 1, wherein said at least one inductive coil assembly is a single-turn antenna.

4. The apparatus according to claim 1, wherein said at least one inductive coil assembly is a multi-turn antenna.

5. The apparatus according to claim 1, wherein said at least one inductive coil assembly is a linear antenna.

6. The apparatus according to claim 1, wherein said inner conductor comprises at least one of copper and aluminum.

7. The apparatus according to claim 1, wherein said slotted outer conductor comprises at least one of copper and aluminum.

8. The apparatus according to claim 1, wherein said dielectric layer comprises at least one of air, vacuum, Teflon, alumina, quartz and polyimide.

9. The apparatus according to claim 2, wherein said second dielectric layer comprises at least one of air, vacuum, Teflon, alumina, quartz and polyimide.

10. The apparatus according to claim 1, wherein said at least one inductive coil assembly is substantially parallel to said substrate holder.

11. The apparatus according to claim 1, wherein said plasma source further comprises an impedance match network.

12. A plasma processing system, the apparatus comprising

process chamber,

substrate holder, and

plasma source, said plasma source comprising a plurality of inductive coil assemblies arranged within said process chamber, wherein each of said plurality of inductive coil assemblies comprises inner conductor, slotted outer conductor, and dielectric layer.

13. The apparatus according to claim 12, wherein at least one of said plurality of inductive coil assemblies further comprises a second dielectric layer coupled to said outer conductor.

14. The apparatus according to claim 12, wherein at least one of said plurality of inductive coil assemblies is a single-turn antenna.

15. The apparatus according to claim 12, wherein at least one of said plurality of inductive coil assemblies is a multi-turn antenna.

16. The apparatus according to claim 12, wherein at least one of said plurality of inductive coil assemblies is a linear antenna.

17. The apparatus according to claim 12, wherein said inner conductor comprises at least one of copper and aluminum.

18. The apparatus according to claim 12, wherein said slotted outer conductor comprises at least one of copper and aluminum.

19. The apparatus according to claim 12, wherein said dielectric layer comprises at least one of air, vacuum, Teflon, alumina, quartz and polyimide.

20. The apparatus according to claim 13, wherein said second dielectric layer comprises at least one of air, vacuum, Teflon, alumina, quartz and polyimide.

21. The apparatus according to claim 12, wherein at least one of said plurality of inductive coil assemblies is substantially parallel to said substrate holder.

22. The apparatus according to claim 12, wherein said plasma source further comprises an impedance match network.

23. A method of plasma processing a substrate, the method comprising the steps of arranging at least one inductive coil assembly in a process chamber, wherein said at least one inductive coil assembly comprises an inner conductor, a slotted outer conductor, and a dielectric layer,

arranging a substrate on a substrate holder,

supplying a process gas to said process chamber,

applying a RF power to the at least one inductive coil assembly, and

processing said substrate to completion, wherein said completion is dictated by a recipe.

24. In a method of applying RF power to a plasma processing chamber, the improvement comprising:

arranging at least one inductive coil assembly in a process chamber, wherein said at least one inductive coil assembly comprises an inner conductor, a slotted outer conductor, and a dielectric layer; and

applying a RF power to the at least one inductive coil assembly.