Integrated circuit with a MOS capacitor
First Claim
1. A method of forming a contact opening through a dielectric layer overlaying an oxide layer in an integrated circuit, the method comprising:
- forming a layer of mask material overlaying the dielectric layer;
patterning the layer of mask material to expose a pre-selected portion of the dielectric layer; and
forming anisotropic contact openings that extend through the layer of dielectric and the layer of oxide using a dry etch with a single mask.
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Accused Products
Abstract
The present invention relates to an integrated circuit having a MOS capacitor. In one embodiment, a method of forming an integrated circuit comprises forming an oxide layer on a surface of a substrate, the substrate having a plurality of isolation islands. Each isolation island is used in forming a semiconductor device. Patterning the oxide layer to expose predetermined areas of the surface of the substrate. Depositing a nitride layer overlaying the oxide layer and the exposed surface areas of the substrate. Implanting ions through the nitride layer, wherein the nitride layer is an implant screen for the implanted ions. Using the nitride layer as a capacitor dielectric in forming a capacitor. In addition, performing a dry etch to form contact openings that extend through the layer of nitride and through the layer of oxide to access selected device regions formed in the substrate.
7 Citations
55 Claims
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1. A method of forming a contact opening through a dielectric layer overlaying an oxide layer in an integrated circuit, the method comprising:
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forming a layer of mask material overlaying the dielectric layer;
patterning the layer of mask material to expose a pre-selected portion of the dielectric layer; and
forming anisotropic contact openings that extend through the layer of dielectric and the layer of oxide using a dry etch with a single mask. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A method of forming an integrated circuit, the method comprising:
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forming an oxide layer on a surface of a substrate, the substrate having a plurality of isolation islands, wherein at least one isolation island is used in forming a semiconductor device;
patterning the oxide layer to expose predetermined areas of the surface of the substrate;
depositing a nitride layer overlaying the oxide layer and the exposed surface areas of the substrate; and
implanting ions through the nitride layer, wherein the nitride layer is an implant screen for the implanted ions. - View Dependent Claims (11, 12, 13, 14)
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15. A method of forming an integrated circuit, the method comprising:
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forming an oxide layer on a surface of a substrate, the substrate having a plurality of isolation islands, wherein at least one isolation island is used in forming a semiconductor device of the integrated circuit;
patterning the oxide layer to expose predetermined areas of the surface of the substrate;
depositing a dielectric layer overlaying the oxide layer and the exposed surface areas of the substrate, wherein the dielectric layer has a higher dielectric constant than a dielectric constant of the oxide layer;
implanting ions through the dielectric layer;
diffusing the ions to form device regions in selected isolation islands in the substrate; and
using the dielectric layer in at least one of the isolation islands as a capacitor dielectric in forming a capacitor. - View Dependent Claims (16, 17, 18, 19, 20, 21, 22)
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23. A method of forming an integrated circuit, the method comprising:
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forming a first oxide layer on a surface of a substrate, the substrate having a plurality of isolation islands, wherein at least one isolation island is used in forming a semiconductor device of the integrated circuit;
patterning the first oxide layer to expose predetermined areas of the surface of the substrate;
implanting and diffusing ions into the substrate to form device regions;
forming a dielectric layer overlaying the oxide layer and the exposed areas of the surface of the substrate, wherein the dielectric layer has a dielectric constant higher than a dielectric constant of the oxide layer; and
using the dielectric layer in at least one of the isolation islands as a capacitor dielectric in forming a capacitor. - View Dependent Claims (24, 25, 26, 27, 28, 29, 30, 31, 32)
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33. A method of forming a capacitor and a transistor in an integrated circuit, the method comprising:
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forming a plurality of isolation islands in a substrate of a first conductivity type with low dopant density, wherein the substrate contains a capacitor isolation island to form the capacitor in and a transistor isolation island to form the transistor in;
forming a base of a second conductivity type in the transistor isolation island adjacent a surface of the substrate;
forming a layer of oxide on a surface of the substrate;
patterning the layer of oxide to form pre-selected exposed surface areas of the substrate;
forming a layer of dielectric over the layer of oxide and the exposed surface areas of the substrate;
implanting dopants of the first conductivity type with high dopant density through the layer of dielectric into the substrate;
diffusing the dopants to form a bottom plate in the capacitor isolation island and an emitter and collector contact in the transistor isolation island, wherein the emitter is formed in a portion of the base, further wherein the bottom plate, the emitter and the collector contact are formed adjacent the surface of the substrate;
using a dry etch to form contact opening through the dielectric layer to the bottom plate in the capacitor isolation island;
using a dry etch to form a contact opening through the dielectric layer and the oxide layer to the emitter in the transistor isolation island;
using a dry etch to form a contact opening through the dielectric layer to the collector contact in the transistor isolation island;
forming a layer of metal overlaying the dielectric layer and the contact openings; and
etching the layer of metal to form a top plate and a bottom plate contact region in the capacitor isolation region and an emitter contact region and a collector contact region in the transistor isolation region. - View Dependent Claims (34, 35, 36, 37)
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38. An integrated circuit comprising:
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a substrate having a plurality of isolation islands, wherein at least one isolation island has a semiconductor device formed therein;
a layer of oxide formed and patterned on a surface of the substrate;
a layer of dielectric formed overlaying the layer of oxide and exposed surface areas of the substrate, the layer of dielectric having a dielectric constant that is higher than the dielectric constant of the layer of oxide, wherein the dielectric layer is used as an implant screen in implanting dopants into respective isolation islands to form devices regions; and
at least one capacitor formed in one of the isolated island in the substrate, each capacitor using the layer of dielectric as a capacitor dielectric, each capacitor dielectric is positioned between a top plate and a bottom plate of an associated capacitor. - View Dependent Claims (39, 40, 41, 42)
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43. An integrated circuit comprising:
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a substrate of having a plurality of isolation islands, wherein at least one isolation island has a semiconductor device formed therein;
a layer of oxide formed and patterned on a surface of the substrate;
a layer of dielectric formed overlaying the layer of oxide and exposed surface areas of the substrate, wherein the layer of dielectric has a dielectric constant that is higher than the dielectric constant of the layer of oxide;
the layer of dielectric and the layer of oxide having anisotropic device openings to expose device regions in the substrate, wherein the device openings are formed by a dry etch; and
at least one capacitor formed in one of the isolated islands in the substrate, each capacitor using the layer of dielectric as a capacitor dielectric, each capacitor dielectric is positioned between a top plate and a bottom plate of an associated capacitor. - View Dependent Claims (44, 45, 46, 47)
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48. An integrated circuit comprising:
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a substrate having a surface and a plurality of isolation islands;
one or more semiconductor devices, each semiconductor device is formed in an associated isolation island, some of the semiconductor devices having device regions formed adjacent the surface of the substrate;
an oxide layer formed and patterned on the surface of the substrate;
a dielectric layer overlaying the patterned oxide layer and exposed surface areas of the substrate, wherein the layer of dielectric has a dielectric constant that is higher than the dielectric constant of the layer of oxide;
the oxide and dielectric layers over select device regions having contact openings with generally vertical side walls with respect to the surface of the substrate; and
at least one capacitor formed in one of the isolation islands, the capacitor having a capacitor dielectric that is formed from a portion of the dielectric layer. - View Dependent Claims (49, 50, 51, 52, 53, 54, 55)
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Specification