RUTHENIUM COMPLEX, PROCESS FOR PRODUCING THE SAME AND PROCESS FOR PRODUCING THIN FILM

• US 20030088116A1
• Filed: 09/09/2002
• Published: 05/08/2003
• Est. Priority Date: 09/12/2001
• Status: Active Grant

• Current Assignee: Tosoh Corporation
• Original Assignee: Tosoh Corporation
• Inventors: Furukawa, Taishi, Kawano, Kazuhisa, Kumagai, Shuji, Oshima, Noriaki, Shibutami, Tetsuo, Sekimoto, Kenichi
• Granted Patent: US 6,605,735 B2
• Time in Patent Office: Days
• US Class Current: 556/136
• CPC Class Codes: C07F 17/02 of metals of Groups 8, 9 or 10 of the Periodic Table
• CPC Class Codes: C23C 16/18 from metallo-organic compounds

Abstract

A ruthenium-containing thin film is produced by the chemical vapor deposition method etc. with the use of an organometallic ruthenium compound represented by the general formula (1), specific example of which is (2,4-dimethyl-pentadienyl)(ethylcyclopentadienyl) ruthenium:

or an organometallic ruthenium compound represented by the general formula (7), specific example of which is carbonylbis(2-methyl-1,3-pentadiene) ruthenium:

as the precursor.

Claims

1. A half-sandwich organometallic ruthenium compound represented by the following general formula (1):

2. The half-sandwich organometallic ruthenium compound according to claim 1, wherein said half-sandwich organometallic ruthenium compound is represented by the following general formula (2):

3. A process for producing a ruthenium-containing thin film which comprises using the half-sandwich organometallic ruthenium compound according to claim 1 as the precursor and forming a ruthenium-containing thin film on a heated substrate by the chemical vapor deposition method.

15. The process for producing a ruthenium-containing thin film according to claim 3, wherein a half-sandwich organometallic ruthenium compound solution prepared by dissolving a half-sandwich organometallic ruthenium compound according to claim 1 in an organic solvent is used.

4. A process for producing a half-sandwich organometallic ruthenium compound represented by the following general formula (1):

5. The process for producing a half-sandwich organometallic ruthenium compound according to claim 4, wherein the open rutenocene represented by the general formula (3) is one obtained by dropping to a liquid mixture of a pentadiene represented by the following general formula (5) with zinc:

6. The process for producing a half-sandwich organometallic ruthenium compound according to claim 4, wherein methanol is employed as the whole solvent or a part thereof and, after filtering off the excessive zinc after the completion of the reaction, the ruthenium complex represented by the general formula (1) is extracted with the use of a solvent arbitrarily immiscible with methanol.

7. The process for producing a half-sandwich organometallic ruthenium compound according to claim 4, wherein, after the extraction with the use of a solvent arbitrarily immiscible with methanol, the solution is concentrated and then distilled to thereby purify the half-sandwich organometallic ruthenium compound represented by the general formula (1).

8. The process for producing a half-sandwich organometallic ruthenium compound according to claim 5, wherein the pentadiene represented by the general formula (5) is added in an amount of from 2 to 20 mol per mol of the halogenated ruthenium hydrate.

9. The process for producing a half-sandwich organometallic ruthenium compound according to claim 4, wherein zinc is added in an amount of from 1.5 to 100 mol per mol of the halogenated ruthenium hydrate or the open ruthenocene represented by the general formula (3).

10. The process for producing a half-sandwich organometallic ruthenium compound according to claim 4, wherein the reaction of the pentadiene represented by the general formula (5) with the halogenated ruthenium hydrate represented by the general formula (6) to synthesize the open ruthenocene represented by the general formula (3) is carried out at a temperature of from −

20 to 100°

C.

11. The process for producing a half-sandwich organometallic ruthenium compound according to claim 4, wherein the reaction of the open ruthenocene represented by the general formula (3) with the cyclopentadiene represented by the general formula (4) to synthesize the half-sandwich organometallic ruthenium compound represented by the general formula (1) is carried out at a temperature of from −

20 to 100°

C.

12. The process for producing a half-sandwich organonetallic ruthenium compound according to claim 4, wherein, in the synthesis of the half-sandwich organometallic ruthenium complex represented by the general formula (1) by reacting the open ruthenocene represented by the general formula (3) with the cyclopentadiene represented by the general formula (4), the cyclopentadiene represented by the general formula (4) is added in an amount of from 0.8 to 1 mol per mol of the open ruthenocene represented by the general formula (3).

13. The process for producing a half-sandwich organometallic ruthenium compound according to claim 4, wherein, after producing the open ruthenocene represented by the general formula (3), it is not isolated but reacted with the cyclopentadiene represented by the general formula (4) in a single pot to thereby synthesize the half-sandwich organometallic ruthenium compound represented by the general formula (1).

14. The process for producing a half-sandwich organometallic ruthenium compound according to claim 4, wherein the reaction is carried out in nitrogen gas or an inert gas atmosphere.

16. A carbonylbis(diene) ruthenium complex represented by the following general formula (7):

17. The carbonylbis(diene) ruthenium complex according to claim 16, wherein, in the general formula (7), at least one of R⁵ to R⁸ is an alkyl group, or an alkyl group containing an alkoxy group, an alkoxycarbonyl group, an alkanoyl group, a hydroxyl group, a carbonyl group, a halogen atom, a carboxyl group, an amino group or a carbamoyl group, and the unsubstituted alkyl group and the substituted alkyl group each has 1 or 2 carbon atoms while the remainder are hydrogen, provided that the case where R⁵ to R⁸ are all hydrogen, and the case where R⁵ and R⁸ are hydrogen and R⁶ and R⁷ are methyl are excluded.

18. The carbonylbis(diene) ruthenium complex according to claim 16, wherein, in the general formula (7), R⁵ and R⁷ are hydrogen while R⁶ and R⁸ are methyl groups.

19. The process for producing a carbonylbis(diene) ruthenium complex according to claim 16, wherein a ruthenium chloride n-hydrate, wherein n is a number of 1 or more, is reacted with a diene in an alcohol in the presence of a zinc powder.

20. The process for producing a carbonylbis(diene) ruthenium complex according to claim 19, wherein the diene is represented by the following general formula (8):

21. The process for producing a carbonylbis(diene) ruthenium complex according to claim 20, wherein, in the general formula (8), at least one of R⁵ to R⁸ is an alkyl group, or an alkyl group containing an alkoxy group, an alkoxycarbonyl group, an alkanoyl group, a hydroxyl group, a carbonyl group, a halogen atom, a carboxyl group, an amino group or a carbamoyl group, and the unsubstituted alkyl group and the substituted alkyl group each has 1 or 2 carbon atoms while the remainder are hydrogen, provided that the case where R⁵ to R⁸ are all hydrogen, and the case where R⁵ and R⁸ are hydrogen and R⁶ and R⁷ are methyl are excluded.

22. The process for producing a carbonylbis(diene) ruthenium complex according to claim 20, wherein, in the general formula (8), R⁵ and R⁷ are hydrogen while R⁶ and R⁸ are methyl groups.

23. The process for producing a carbonylbis(diene) ruthenium complex according to claim 19, wherein an alcoholic solution of the ruthenium chloride n-hydrate is dropped into the diene or an alcoholic solution of diene having a zinc powder dispersed therein and then reacted at 0 to 80°

C.

24. A process for producing a ruthenium-containing thin film which comprises using a carbonylbis(diene) ruthenium complex according to claim 16 as the precursor.

25. The process for producing a ruthenium-containing thin film according to claim 24, wherein ruthenium or ruthenium oxide is grown on a substrate by the chemical vapor deposition method.

26. The process for producing a ruthenium-containing thin film according to claim 24, wherein ruthenium or ruthenium oxide is formed on a substrate by the coating heat decomposition method.