Light emitting apparatus and method for manufacturing the same
First Claim
1. A light emitting device comprising;
- a thin film transistor over an insulating surface comprising;
a semiconductor layer;
a gate insulation film; and
a gate electrode;
a first inorganic insulation layer under the semiconductor layer;
a second inorganic insulation layer over the gate electrode;
a first organic insulation layer over the second inorganic insulation layer;
a third inorganic insulation layer over the first organic insulation layer;
an anode layer formed over the third inorganic insulation layer;
a second organic insulation layer overlapping with an end of the anode layer, the second organic insulation layer having an inclined surface with continuously varying curvatures;
a fourth inorganic insulation layer formed over the upper surface and the side surface of the second organic insulation layer, the fourth inorganic insulation layer having an opening over the anode layer;
a light emitting layer comprising an organic material formed over the anode layer and the fourth inorganic insulation layer;
a cathode layer formed over the light emitting layer comprising an organic material; and
a fifth inorganic insulation layer formed over the cathode layer, wherein the light emitted from the light emitting element is visible through the third inorganic insulation layer, and wherein each of the third inorganic insulation layer to the fourth inorganic insulation layer comprises a material selected from the group consisting of silicon nitride and aluminum nitride.
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Accused Products
Abstract
The purpose of the invention is to improve reliability of a light emitting apparatus comprising TFTs and organic light emitting elements. The light emitting apparatus according to the invention having thin film transistors and light emitting elements, comprises; a second inorganic insulation layer on a gate electrode, a first organic insulation layer on the second inorganic insulation layer, a third inorganic insulation layer on the first organic insulation layer, an anode layer formed on the third inorganic insulation layer, a second organic insulation layer overlapping with the end of the anode layer and having an inclination angle of 35 to 45 degrees, a fourth inorganic insulation layer formed on the upper surface and side surface of the second organic insulation layer and having an opening over the anode layer, an organic compound layer formed in contact with the anode layer and the fourth inorganic insulation layer and containing light emitting material, and a cathode layer formed in contact with the organic compound layer containing the light emitting material, wherein the third inorganic insulation layer and the fourth inorganic insulation layer are formed with silicon nitride or aluminum nitride.
136 Citations
49 Claims
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1. A light emitting device comprising;
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a thin film transistor over an insulating surface comprising;
a semiconductor layer;
a gate insulation film; and
a gate electrode;
a first inorganic insulation layer under the semiconductor layer;
a second inorganic insulation layer over the gate electrode;
a first organic insulation layer over the second inorganic insulation layer;
a third inorganic insulation layer over the first organic insulation layer;
an anode layer formed over the third inorganic insulation layer;
a second organic insulation layer overlapping with an end of the anode layer, the second organic insulation layer having an inclined surface with continuously varying curvatures;
a fourth inorganic insulation layer formed over the upper surface and the side surface of the second organic insulation layer, the fourth inorganic insulation layer having an opening over the anode layer;
a light emitting layer comprising an organic material formed over the anode layer and the fourth inorganic insulation layer;
a cathode layer formed over the light emitting layer comprising an organic material; and
a fifth inorganic insulation layer formed over the cathode layer, wherein the light emitted from the light emitting element is visible through the third inorganic insulation layer, and wherein each of the third inorganic insulation layer to the fourth inorganic insulation layer comprises a material selected from the group consisting of silicon nitride and aluminum nitride. - View Dependent Claims (3, 5, 7, 9, 11)
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2. A light emitting device comprising:
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a pixel section over an insulating surface comprising a thin film transistor comprising;
a semiconductor layer;
a gate insulation film; and
a gate electrode;
a driving circuit section over the insulating surface comprising a thin film transistor comprising;
a semiconductor layer;
a gate insulation film; and
a gate electrode;
a first inorganic insulation layer under the semiconductor layer;
a second inorganic insulation layer over the gate insulation film and a gate electrode;
a first organic insulation layer over the second inorganic insulation layer;
a third inorganic insulation layer over the first organic insulation layer;
an anode layer formed over the third inorganic insulation layer;
a second organic insulation layer overlapping with an end of the anode layer, the second organic insulation layer having an inclination angle of 35 to 45 degrees;
a fourth inorganic insulation layer formed over the upper surface and the side surface of the second organic insulation layer, the fourth inorganic insulation layer having an opening over the anode layer;
a light emitting layer comprising an organic material formed over the anode layer and the fourth inorganic insulation layer;
a cathode layer formed over the light emitting layer comprising an organic material;
a fifth inorganic insulation layer formed over the cathode layer; and
a seal pattern formed over the fourth inorganic insulation layer, wherein the driving circuit section is formed in the peripheral region of the pixel section, wherein the light emitted from the light emitting material is visible through the third inorganic insulation layer, wherein each of the third inorganic insulation layer and the fourth inorganic insulation layer comprises a material selected from the group consisting of silicon nitride and aluminum nitride, and wherein the seal pattern is overlapped with the driving circuit section. - View Dependent Claims (4, 6, 8, 10, 12)
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13. A light emitting device comprising;
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a thin film transistor over an insulating surface comprising;
a semiconductor layer;
a gate insulation film; and
a gate electrode;
a first inorganic insulation layer under the semiconductor layer;
a second inorganic insulation layer over the gate electrode and the gate insulation film;
a first organic insulation layer over the second inorganic insulation layer;
a third inorganic insulation layer over the first organic insulation layer;
an anode layer formed over the third inorganic insulation layer;
a second organic insulation layer overlapping with an end of the anode layer, the second organic insulation layer having an inclined surface with continuously varying curvatures;
a fourth inorganic insulation layer formed over the upper surface and the side surface of the second organic insulation layer, the fourth inorganic insulation layer having an opening over the anode layer;
a light emitting layer comprising an organic material formed over the anode layer and the fourth inorganic insulation layer; and
a cathode layer formed over the light emitting layer comprising an organic material, wherein each of the third inorganic insulation layer and the fourth inorganic insulation layer comprises a material selected from the group consisting of silicon nitride and aluminum nitride. - View Dependent Claims (14, 15)
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16. A light emitting device comprising:
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a pixel section over an insulating surface comprising a thin film transistor comprising;
a semiconductor layer;
a gate insulation film; and
a gate electrode;
a driving circuit section over the insulating surface comprising a thin film transistor comprising;
a semiconductor layer;
a gate insulation film; and
a gate electrode;
a first inorganic insulation layer under the semiconductor layer;
a second inorganic insulation layer over the gate electrode and the gate insulation layer;
a first organic insulation layer over the second inorganic insulation layer;
a third inorganic insulation layer over the first organic insulation layer;
an anode layer formed over the third inorganic insulation layer;
a second organic insulation layer overlapping with an end of the anode layer, the second organic insulation layer having an inclination angle of 35 to 45 degrees;
a fourth inorganic insulation layer formed over the upper surface and the side surface of the second organic insulation layer, the fourth inorganic insulation layer having an opening over the anode layer;
a light emitting layer comprising an organic material formed over the anode layer and the fourth inorganic insulation layer;
a cathode layer formed over the light emitting layer comprising an organic material; and
a seal pattern over the fourth inorganic insulation layer, wherein the driving circuit section is formed in the peripheral region of the pixel section, and wherein each of the third inorganic insulation layer and the fourth inorganic insulation layer comprises a material selected from the group consisting of silicon nitride and aluminum nitride. - View Dependent Claims (17, 18, 19, 20, 21, 22, 23, 24)
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25. A method for manufacturing a light emitting device comprising a pixel section comprising a thin film transistor comprising a semiconductor layer, a gate insulation film and a gate electrode, and a light emitting element comprising a light emitting layer comprising an organic material between an anode layer and a cathode layer, and a driving circuit section comprising a thin film transistor comprising a semiconductor layer, a gate insulation film and a gate electrode, comprising steps of:
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forming a first inorganic insulation layer over an insulating surface, forming a semiconductor layer comprising crystalline silicon over the first inorganic insulation layer;
forming a gate insulation film over the semiconductor layer;
forming a gate electrode over the gate insulation film;
forming an impurity region in the semiconductor layer;
forming a second inorganic insulation layer over the gate electrode and the gate insulation film;
forming a first organic insulation layer over the second inorganic insulation layer;
forming a third inorganic insulation layer over the second organic insulation layer;
forming an anode layer over the third inorganic insulation layer;
forming a second organic insulation layer overlapping with an end of the anode layer, the second organic insulation layer having an inclined surface with continuously varying curvatures;
forming a fourth inorganic insulation layer over the upper surface and the side surface of the second organic insulation layer, the fourth inorganic insulation layer having an opening over the anode layer;
forming a light emitting layer comprising an organic material over the anode layer, the light emitting layer comprising an organic material having an end overlapping with the fourth inorganic insulation layer; and
,forming a cathode layer over the light emitting layer comprising an organic material, wherein the driving circuit section is formed in the peripheral region of the pixel section, and wherein each of the third inorganic insulation layer and the fourth inorganic insulation layer comprises a material selected from the group consisting of silicon nitride and aluminum nitride formed by the RF sputtering. - View Dependent Claims (27, 29, 31, 33, 35)
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26. A method for manufacturing a light emitting device comprising a pixel section comprising a thin film transistor comprising a semiconductor layer, a gate insulation film and a gate electrode, and a light emitting element comprising a light emitting layer comprising an organic material comprising light emitting material between an anode layer and a cathode layer, and a driving circuit section comprising a thin film transistor comprising a semiconductor layer, a gate insulation film and a gate electrode, comprising steps of:
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forming a first inorganic insulation layer over an insulating surface;
forming a semiconductor layer comprising crystalline silicon over the first inorganic insulation layer;
forming a gate insulation film over the semiconductor layer;
forming a gate electrode over the gate insulation film;
introducing an impurity in the semiconductor layer;
forming a second inorganic insulation layer over the gate electrode and the gate insulation film;
forming a first organic insulation layer over the second inorganic insulation layer;
forming a third inorganic insulation layer over the first organic insulation layer;
forming an anode layer over the third inorganic insulation layer;
forming a second organic insulation layer overlapping with an end of the anode layer, the second organic insulation layer having an inclined surface with continuously varying curvatures;
forming a fourth inorganic insulation layer over the upper surface and the side surface of the second organic insulation layer, the fourth inorganic insulation layer having an opening over the anode layer;
forming a light emitting layer comprising an organic material over the anode layer, the light emitting layer comprising an organic material having an end overlapping with the fourth inorganic insulation layer;
forming a cathode layer over the light emitting layer comprising an organic material;
forming a seal pattern over the fourth insulation layer at a position in which the seal patterns is overlapped with the driving circuit section; and
adhering a sealing plate in alignment with the seal pattern, wherein the driving circuit section is formed in the peripheral region of the pixel section, and wherein each of the third inorganic insulation layer and the fourth inorganic insulation layer comprises silicon nitride or aluminum nitride formed by the RF sputtering. - View Dependent Claims (28, 30, 32, 34, 36)
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37. A light emitting device comprising;
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a thin film transistor over an insulating surface comprising;
a semiconductor layer;
a gate insulation film; and
a gate electrode;
a first inorganic insulation layer under the semiconductor layer;
a second inorganic insulation layer over the gate electrode;
a first organic insulation layer over the second inorganic insulation layer;
a third inorganic insulation layer over the first organic insulation layer;
an anode layer formed over the third inorganic insulation layer;
a second organic insulation layer overlapping with an end of the anode layer, the second organic insulation layer having an inclined surface with continuously varying curvatures;
a fourth inorganic insulation layer formed over the upper surface and the side surface of the second organic insulation layer, the fourth inorganic insulation layer having an opening over the anode layer;
alight emitting layer comprising an organic material formed over the anode layer and the fourth inorganic insulation layer;
a cathode layer formed over the light emitting layer comprising an organic material; and
a fifth inorganic insulation layer over the cathode layer, wherein each of the third inorganic insulation layer to the fourth inorganic insulation layer comprises a material selected from the group consisting of silicon nitride and aluminum nitride. - View Dependent Claims (40, 42, 44, 46, 48)
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38. A light emitting device comprising:
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a pixel section over an insulating surface comprising a thin film transistor comprising;
a semiconductor layer;
a gate insulation film; and
a gate electrode;
a driving circuit section over the insulating surface comprising a thin film transistor comprising;
a semiconductor layer;
a gate insulation film; and
a gate electrode;
a first inorganic insulation layer under the semiconductor layer;
a second inorganic insulation layer over the gate insulation film and a gate electrode;
a first organic insulation layer over the second inorganic insulation layer;
a third inorganic insulation layer over the first organic insulation layer;
an anode layer formed over the third inorganic insulation layer;
a second organic insulation layer overlapping with an end of the anode layer, the second organic insulation layer having an inclination angle of 35 to 45 degrees;
a fourth inorganic insulation layer formed over the upper surface and the side surface of the second organic insulation layer, the fourth inorganic insulation layer having an opening over the anode layer;
a light emitting layer comprising an organic material formed over the anode layer and the fourth inorganic insulation layer;
a cathode layer formed over the light emitting layer comprising an organic material;
a fifth inorganic insulation layer over the cathode layer; and
a seal pattern formed over the fourth inorganic insulation layer;
wherein the driving circuit section is formed in the peripheral region of the pixel section, and wherein each of the third inorganic insulation layer and the fourth inorganic insulation layer comprises a material selected from the group consisting of silicon nitride and aluminum nitride. - View Dependent Claims (39, 41, 43, 45, 47, 49)
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Specification