Method of depositing an amorphous carbon layer
First Claim
1. A method of forming a device, comprising:
- forming one or more amorphous carbon layers on a substrate; and
defining a pattern in at least one region of the one or more amorphous carbon layers.
1 Assignment
0 Petitions
Accused Products
Abstract
A method of forming an integrated circuit using an amorphous carbon film. The amorphous carbon film is formed by thermally decomposing a gas mixture comprising a hydrocarbon compound and an inert gas. The amorphous carbon film is compatible with integrated circuit fabrication processes. In one integrated circuit fabrication process, the amorphous carbon film is used as a hardmask. In another integrated circuit fabrication process, the amorphous carbon film is an anti-reflective coating (ARC) for deep ultraviolet (DUV) lithography. In yet another integrated circuit fabrication process, a multi-layer amorphous carbon anti-reflective coating is used for DUV lithography.
698 Citations
20 Claims
-
1. A method of forming a device, comprising:
-
forming one or more amorphous carbon layers on a substrate; and
defining a pattern in at least one region of the one or more amorphous carbon layers. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
-
-
14. A method of fabricating a damascene structure, comprising forming a dielectric layer on a substrate;
-
forming an amorphous carbon layer on the dielectric layer;
patterning the amorphous carbon layer to define contacts/vias therethrough;
transferring the pattern formed in the amorphous carbon layer through the dielectric layer to form contacts/vias therein;
removing the amorphous carbon layer from the patterned dielectric layer; and
filling the contacts/vias formed in the dielectric layer with a conductive material. - View Dependent Claims (15, 16, 17, 18, 19, 20)
-
Specification