Light emitting device

• US 20030094615A1
• Filed: 11/15/2002
• Published: 05/22/2003
• Est. Priority Date: 11/16/2001
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Takayama, Toru, Murakami, Satoshi, Yamazaki, Shunpei, Sakakura, Masayuki
• Granted Patent: US 6,822,264 B2
• Time in Patent Office: Days
• US Class Current: 257/72
• CPC Class Codes: H01L 27/12 the substrate being other than a semiconductor body, e.g. an insulating body
• CPC Class Codes: H01L 27/124 with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits wiring structures per se H01L23/52
• CPC Class Codes: H01L 27/1248 with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
• CPC Class Codes: H01L 29/66757 Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
• CPC Class Codes: H01L 29/78621 with LDD structure or an extension or an offset region or characterised by the doping profile
• CPC Class Codes: H01L 29/78633 with a light shield
• CPC Class Codes: H10K 50/841 Self-supporting sealing arrangements
• CPC Class Codes: H10K 50/8426 Peripheral sealing arrangements, e.g. adhesives, sealants
• CPC Class Codes: H10K 50/8445 multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers
• CPC Class Codes: H10K 50/846 comprising getter material or desiccants
• CPC Class Codes: H10K 50/865 comprising light absorbing layers, e.g. light-blocking layers
• CPC Class Codes: H10K 59/12 Active-matrix OLED [AMOLED] displays
• CPC Class Codes: H10K 59/1201 Manufacture or treatment
• CPC Class Codes: H10K 59/131 Interconnections, e.g. wiring lines or terminals
• CPC Class Codes: H10K 59/8722 Peripheral sealing arrangements, e.g. adhesives, sealants
• CPC Class Codes: H10K 59/8731 multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers
• CPC Class Codes: H10K 59/874 including getter material or desiccant
• CPC Class Codes: H10K 59/8792 comprising light absorbing layers, e.g. black layers

Abstract

The reliability of a light-emitting device constituted by a combination of a TFT and a light-emitting element is to be improved. A light-emitting element is formed between a first substrate and a second substrate. The light-emitting device is formed over a first insulating layer made of an organic compound and a second insulating layer made of an inorganic insulating material containing nitrogen formed on the surface of the first insulating layer. In an outer circumferential part of a display area formed by the light-emitting element, a shield pattern surrounding the display area is formed by metal wiring on the second insulating layer, and the first substrate and the second substrate are fixed to each other with an adhesive resin formed in contact with the shield pattern.

Claims

1. A light-emitting device comprising:

a first substrate;

a first insulating layer comprising an organic compound over the first substrate;

a second insulating layer comprising an inorganic insulating material comprising nitrogen over the first insulating layer;

a light-emitting element over the second insulating layer;

a shield pattern formed from a metal wiring over the second insulating layer;

an adhesive resin on the shield pattern; and

a second substrate on the adhesive resin,

wherein the shield pattern is formed in a peripheral part of a display area formed form the light emitting element and surrounds the display area, and

wherein the first substrate and the second substrate are fixed to each other with the adhesive resin.

11. The light-emitting device according to claim 1,

wherein the inorganic insulating material is silicon nitride prepared by a RF sputtering method.

21. The light-emitting device according to claim 1,

wherein the inorganic insulating material has an oxygen concentration of 10 atom % or less and a hydrogen concentration of 10 atom %.

36. The light-emitting device according to claim 1, further comprising an insulating layer comprising an inorganic material over the light-emitting element.

46. The light-emitting device according to claim 1,

wherein the shield pattern comprises a recess portion in contact with the adhesive resin.

2. A light-emitting device comprising:

a first substrate;

a first insulating layer comprising an organic compound over the first substrate;

a second insulating layer comprising an inorganic insulating material comprising nitrogen over the first insulating layer;

a third insulating layer comprising an organic compound over the second insulating layer;

a fourth insulating layer comprising an inorganic insulating material comprising nitrogen and formed to cover exposed top surface and lateral surfaces of said third insulating layer;

a light-emitting element over the third insulating layer;

a shield pattern formed from a metal wiring over the second insulating layer;

an adhesive resin on the shield pattern; and

a second substrate on the adhesive resin,

wherein the shield pattern is formed in a peripheral part of a display area formed form the light emitting element and surrounds the display area,

wherein a top surface of the metal wiring is arranged in an aperture of the third insulating layer with its lateral surfaces covered with said fourth insulating layer, and

wherein the first substrate and the second substrate are fixed to each other with the adhesive.

12. The light-emitting device according to claim 2,

wherein the inorganic insulating material is silicon nitride prepared by a RF sputtering method.

22. The light-emitting device according to claim 2,

wherein the inorganic insulating material has an oxygen concentration of 10 atom % or less and a hydrogen concentration of 10 atom %.

37. The light-emitting device according to claim 2, further comprising an insulating layer comprising an inorganic material over the light-emitting element.

47. The light-emitting device according to claim 2,

wherein the shield pattern comprises a recess portion in contact with the adhesive resin.

3. A light-emitting device comprising

a first substrate;

a first insulating layer comprising an organic compound over the first substrate;

a second insulating layer comprising an inorganic insulating material comprising nitrogen over the first insulating layer;

a third insulating layer comprising an organic compound over the second insulating layer;

a fourth insulating layer comprising an inorganic insulating material comprising nitrogen and formed to cover exposed top surface and lateral surfaces of said third insulating layer;

a light-emitting element over the third insulating layer;

a plurality of shield patterns formed from a metal wiring over the second insulating layer;

an adhesive resin on the shield pattern; and

a second substrate on the adhesive resin,

wherein the plurality of the shield patterns are formed in a peripheral part of a display area formed form the light emitting element and surrounds the display area,

wherein top surfaces of the plurality of the metal wirings are arranged in a plurality of apertures of the third insulating layer with its lateral surfaces covered with said fourth insulating layer, and

wherein the first substrate and the second substrate are fixed to each other with the adhesive resin.

13. The light-emitting device according to claim 3,

wherein the inorganic insulating material is silicon nitride prepared by a RF sputtering method.

23. The light-emitting device according to claim 3,

wherein the inorganic insulating material has an oxygen concentration of 10 atom % or less and a hydrogen concentration of 10 atom %.

38. The light-emitting device according to claim 3, further comprising an insulating layer comprising an inorganic material over the light-emitting element.

48. The light-emitting device according to claim 3,

wherein at least one of the shield patterns comprise a recess portion in contact with the adhesive resin.

4. A light-emitting apparatus comprising:

a first substrate;

a first insulating layer comprising an organic compound over the first substrate;

a second insulating layer comprising an inorganic insulating material comprising nitrogen over the first insulating layer;

a third insulating layer comprising an organic compound over the second insulating layer;

a fourth insulating layer comprising an inorganic insulating material comprising nitrogen and formed to cover exposed top surface and lateral surfaces of said third insulating layer;

a light-emitting element over the third insulating layer;

a shield pattern formed from a metal wiring over the second insulating layer;

an adhesive resin on the shield pattern; and

a second substrate on the adhesive resin,

wherein the shield pattern is formed in a peripheral part of a display area formed form the light emitting element and surrounds the display area,

wherein a top surface and lateral surfaces of the metal wiring are arranged in an aperture of the third insulating layer with its lateral surfaces covered with said fourth insulating layer, and

wherein the first substrate and the second substrate are fixed to each other with the adhesive resin.

14. The light-emitting device according to claim 4,

wherein the inorganic insulating material is silicon nitride prepared by a RF sputtering method.

24. The light-emitting device according to claim 4,

wherein the inorganic insulating material has an oxygen concentration of 10 atom % or less and a hydrogen concentration of 10 atom %.

39. The light-emitting device according to claim 4, further comprising an insulating layer comprising an inorganic material over the light-emitting element.

49. The light-emitting device according to claim 4,

wherein the shield pattern comprises a recess portion in contact with the adhesive resin.

5. A light-emitting device comprising

a first substrate;

a first insulating layer comprising an organic compound over the first substrate;

a second insulating layer comprising an inorganic insulating material comprising nitrogen over the first insulating layer;

a third insulating layer comprising an organic compound over the second insulating layer;

a fourth insulating layer comprising an inorganic insulating material comprising nitrogen and formed to cover exposed top surface and lateral surfaces of said third insulating layer;

a light-emitting element over the third insulating layer;

a plurality of shield patterns formed from a metal wiring over the second insulating layer;

an adhesive resin on the shield pattern; and

a second substrate on the adhesive resin,

wherein the plurality of the shield patterns are formed in a peripheral part of a display area formed form the light emitting element and surrounds the display area,

wherein top surfaces and lateral surfaces of the plurality of the metal wirings are arranged in a plurality of apertures of the third insulating layer with its lateral surfaces covered with said fourth insulating layer, and

wherein the first substrate and the second substrate are fixed to each other with the adhesive resin.

15. The light-emitting device according to claim 5,

wherein the inorganic insulating material is silicon nitride prepared by a RF sputtering method.

25. The light-emitting device according to claim 5,

wherein the inorganic insulating material has an oxygen concentration of 10 atom % or less and a hydrogen concentration of 10 atom %.

40. The light-emitting device according to claim 5, further comprising an insulating layer comprising an inorganic material over the light-emitting element.

50. The light-emitting device according to claim 5,

wherein at least one of the shield patterns comprise a recess portion in contact with the adhesive resin.

6. A light-emitting device comprising:

a first substrate;

a thin film transistor over the first substrate comprising;

a semiconductor layer;

a gate insulating film; and

a gate electrode;

a first insulating layer comprising an organic compound over the thin film transistor;

a second insulating layer comprising an inorganic insulating material comprising nitrogen over the first insulating layer;

a light-emitting element over the second insulating layer comprising;

an anode;

a cathode; and

a light emitting layer comprising an organic compound between the anode and the cathode;

a shield pattern formed from a metal wiring over the second insulating layer;

an adhesive resin on the shield pattern; and

a second substrate on the adhesive resin,

wherein the shield pattern is formed in a peripheral part of a display area formed form the light emitting element and surrounds the display area, and

wherein the first substrate and the second substrate are fixed to each other with the adhesive resin.

16. The light-emitting device according to claim 6,

wherein the inorganic insulating material is silicon nitride prepared by a RF sputtering method.

26. The light-emitting device according to claim 6,

wherein the inorganic insulating material has an oxygen concentration of 10 atom % or less and a hydrogen concentration of 10 atom %.

31. The light-emitting device according to claim 6, further comprising an insulating layer comprising an inorganic material under the thin film transistor.

41. The light-emitting device according to claim 6, further comprising an insulating layer comprising an inorganic material over the light-emitting element.

51. The light-emitting device according to claim 6,

wherein the shield pattern comprises a recess portion in contact with the adhesive resin.

7. A light-emitting device comprising:

a first substrate;

a thin film transistor over the first substrate comprising;

a semiconductor layer;

a gate insulating film; and

a gate electrode;

a first insulating layer comprising an organic compound over the thin film transistor;

a second insulating layer comprising an inorganic insulating material comprising nitrogen over the first insulating layer;

a third insulating layer comprising an organic compound over the second insulating layer;

a fourth insulating layer comprising an inorganic insulating material comprising nitrogen and formed to cover exposed top surface and lateral surfaces of said third insulating layer;

a light-emitting element over the second insulating layer comprising;

an anode;

a cathode; and

a light emitting layer comprising an organic compound between the anode and the cathode;

a shield pattern formed from a metal wiring over the second insulating layer;

an adhesive resin on the shield pattern; and

a second substrate on the adhesive resin,

wherein the shield pattern is formed in a peripheral part of a display area formed form the light emitting element and surrounds the display area,

wherein a top surface of the metal wiring is arranged in an aperture of the third insulating layer with its lateral surfaces covered with said fourth insulating layer, and

wherein the first substrate and the second substrate are fixed to each other with the adhesive.

17. The light-emitting device according to claim 7,

wherein the inorganic insulating material is silicon nitride prepared by a RF sputtering method.

27. The light-emitting device according to claim 7,

wherein the inorganic insulating material has an oxygen concentration of 10 atom % or less and a hydrogen concentration of 10 atom %.

32. The light-emitting device according to claim 7, further comprising an insulating layer comprising an inorganic material under the thin film transistor.

42. The light-emitting device according to claim 7, further comprising an insulating layer comprising an inorganic material over the light-emitting element.

52. The light-emitting device according to claim 7,

wherein the shield pattern comprises a recess portion in contact with the adhesive resin.

8. A light-emitting device comprising

a first substrate;

a thin film transistor over the first substrate comprising;

a semiconductor layer;

a gate insulating film; and

a gate electrode;

a first insulating layer comprising an organic compound over the thin film transistor;

a second insulating layer comprising an inorganic insulating material comprising nitrogen over the first insulating layer;

a third insulating layer comprising an organic compound over the second insulating layer;

a fourth insulating layer comprising an inorganic insulating material comprising nitrogen and formed to cover exposed top surface and lateral surfaces of said third insulating layer;

a light-emitting element over the second insulating layer comprising;

an anode;

a cathode; and

a light emitting layer comprising an organic compound between the anode and the cathode;

a plurality of shield patterns formed from a metal wiring over the second insulating layer;

an adhesive resin on the shield pattern; and

a second substrate on the adhesive resin,

wherein the plurality of the shield patterns are formed in a peripheral part of a display area formed form the light emitting element and surrounds the display area,

wherein top surfaces of the plurality of the metal wirings are arranged in a plurality of apertures of the third insulating layer with its lateral surfaces covered with said fourth insulating layer, and

wherein the first substrate and the second substrate are fixed to each other with the adhesive resin.

18. The light-emitting device according to claim 8,

wherein the inorganic insulating material is silicon nitride prepared by a RF sputtering method.

28. The light-emitting device according to claim 8,

wherein the inorganic insulating material has an oxygen concentration of 10 atom % or less and a hydrogen concentration of 10 atom %.

33. The light-emitting device according to claim 8, further comprising an insulating layer comprising an inorganic material under the thin film transistor.

43. The light-emitting device according to claim 8, further comprising an insulating layer comprising an inorganic material over the light-emitting element.

53. The light-emitting device according to claim 8,

wherein at least one of the shield patterns comprise a recess portion in contact with the adhesive resin.

9. A light-emitting apparatus comprising:

a first substrate;

a thin film transistor over the first substrate comprising;

a semiconductor layer;

a gate insulating film; and

a gate electrode;

a first insulating layer comprising an organic compound over the thin film transistor;

a second insulating layer comprising an inorganic insulating material comprising nitrogen over the first insulating layer;

a third insulating layer comprising an organic compound over the second insulating layer;

a fourth insulating layer comprising an inorganic insulating material comprising nitrogen and formed to cover exposed top surface and lateral surfaces of said third insulating layer;

a light-emitting element over the second insulating layer comprising;

an anode;

a cathode; and

a light emitting layer comprising an organic compound between the anode and the cathode;

a shield pattern formed from a metal wiring over the second insulating layer;

an adhesive resin on the shield pattern; and

a second substrate on the adhesive resin,

wherein the shield pattern is formed in a peripheral part of a display area formed form the light emitting element and surrounds the display area,

wherein a top surface and lateral surfaces of the metal wiring are arranged in an aperture of the third insulating layer with its lateral surfaces covered with said fourth insulating layer, and

wherein the first substrate and the second substrate are fixed to each other with the adhesive resin.

19. The light-emitting device according to claim 9,

wherein the inorganic insulating material is silicon nitride prepared by a RF sputtering method.

29. The light-emitting device according to claim 9,

wherein the inorganic insulating material has an oxygen concentration of 10 atom % or less and a hydrogen concentration of 10 atom %.

34. The light-emitting device according to claim 9, further comprising an insulating layer comprising an inorganic material under the thin film transistor.

44. The light-emitting device according to claim 9, further comprising an insulating layer comprising an inorganic material over the light-emitting element.

54. The light-emitting device according to claim 9,

wherein the shield pattern comprises a recess portion in contact with the adhesive resin.

10. A light-emitting device comprising

a first substrate;

a thin film transistor over the first substrate comprising;

a semiconductor layer;

a gate insulating film; and

a gate electrode;

a first insulating layer comprising an organic compound over the thin film transistor;

a second insulating layer comprising an inorganic insulating material comprising nitrogen over the first insulating layer;

a third insulating layer comprising an organic compound over the second insulating layer;

a fourth insulating layer comprising an inorganic insulating material comprising nitrogen and formed to cover exposed top surface and lateral surfaces of said third insulating layer;

a light-emitting element over the second insulating layer comprising;

an anode;

a cathode; and

a light emitting layer comprising an organic compound between the anode and the cathode;

a plurality of shield patterns formed from a metal wiring over the second insulating layer;

an adhesive resin on the shield pattern; and

a second substrate on the adhesive resin,

wherein the plurality of the shield patterns are formed in a peripheral part of a display area formed form the light emitting element and surrounds the display area,

wherein top surfaces and lateral surfaces of the plurality of the metal wirings are arranged in a plurality of apertures of the third insulating layer with its lateral surfaces covered with said fourth insulating layer, and

wherein the first substrate and the second substrate are fixed to each other with the adhesive resin.

20. The light-emitting device according to claim 10,

wherein the inorganic insulating material is silicon nitride prepared by a RF sputtering method.

30. The light-emitting device according to claim 10,

wherein the inorganic insulating material has an oxygen concentration of 10 atom % or less and a hydrogen concentration of 10 atom %.

35. The light-emitting device according to claim 10, further comprising an insulating layer comprising an inorganic material under the thin film transistor.

45. The light-emitting device according to claim 10, further comprising an insulating layer comprising an inorganic material over the light-emitting element.

55. The light-emitting device according to claim 10,

wherein at least one of the shield patterns comprise a recess portion in contact with the adhesive resin.