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High Q inductor with faraday shield and dielectric well buried in substrate

  • US 20030096435A1
  • Filed: 01/03/2003
  • Published: 05/22/2003
  • Est. Priority Date: 02/10/2001
  • Status: Active Grant
First Claim
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1. A device for an integrated circuit, comprising:

  • a. a semiconductor substrate;

    b. a well in the substrate, the well having a floor;

    c. a conductive ground shield disposed planarily on the well floor; and

    d. an inductor disposed above the well and parallel to the shield.

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