Methods for producing uniform large-grained and grain boundary location manipulated polycrystalline thin film semiconductors using sequential lateral solidification
First Claim
1. A method for processing an amorphous silicon thin film sample into a polycrystalline silicon thin film, comprising the steps of:
- (a) generating a sequence of excimer laser pulses;
(b) controllably modulating each excimer laser pulse in said sequence to a predetermined fluence;
(c) homoginizing each modulated laser pulse in said sequence in a predetermined plane;
(d) masking portions of each homoginized fluence controlled laser pulse in said sequence with a two dimensional pattern of slits to generate a sequence of fluence controlled pulses of line patterned beamlets, each slit in said pattern of slits being sufficiently narrow to prevent inducement of significant nucleation in region of a silicon thin film sample irradiated by a beamlet corresponding to said slit, (e) irradiating an amorphous silicon thin film sample with said sequence of fluence controlled slit patterned beamlets to effect melting of portions thereof corresponding to each fluence controlled patterned beamlet pulse in said sequence of pulses of patterned beamlets; and
(f) controllably sequentially translating a relative position of said sample with respect to each of said fluence controlled pulse of slit patterned beamlets to thereby process said amorphous silicon thin film sample into a single or polycrystalline silicon thin film.
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Abstract
Methods for processing an amorphous silicon thin film sample into a polycrystalline silicon thin film are disclosed. In one preferred arrangement, a method includes the steps of generating a sequence of excimer laser pulses, controllably modulating each excimer laser pulse in the sequence to a predetermined fluence, homoginizing each modulated laser pulse in the sequence in a predetermined plane, masking portions of each homoginized fluence controlled laser pulse in the sequence with a two dimensional pattern of slits to generate a sequence of fluence controlled pulses of line patterned beamlets, each slit in the pattern of slits being sufficiently narrow to prevent inducement of significant nucleation in region of a silicon thin film sample irradiated by a beamlet corresponding to the slit, irradiating an amorphous silicon thin film sample with the sequence of fluence controlled slit patterned beamilets to effect melting of portions thereof corresponding to each fluence controlled patterned beamlet pulse in the sequence of pulses of patterned beamlets, and controllably sequentially translating a relative position of the sample with respect to each of the fluence controlled pulse of slit patterned beamlets to thereby process the amorphous silicon thin film sample into a single or polycrystalline silicon thin film
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Citations
14 Claims
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1. A method for processing an amorphous silicon thin film sample into a polycrystalline silicon thin film, comprising the steps of:
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(a) generating a sequence of excimer laser pulses;
(b) controllably modulating each excimer laser pulse in said sequence to a predetermined fluence;
(c) homoginizing each modulated laser pulse in said sequence in a predetermined plane;
(d) masking portions of each homoginized fluence controlled laser pulse in said sequence with a two dimensional pattern of slits to generate a sequence of fluence controlled pulses of line patterned beamlets, each slit in said pattern of slits being sufficiently narrow to prevent inducement of significant nucleation in region of a silicon thin film sample irradiated by a beamlet corresponding to said slit, (e) irradiating an amorphous silicon thin film sample with said sequence of fluence controlled slit patterned beamlets to effect melting of portions thereof corresponding to each fluence controlled patterned beamlet pulse in said sequence of pulses of patterned beamlets; and
(f) controllably sequentially translating a relative position of said sample with respect to each of said fluence controlled pulse of slit patterned beamlets to thereby process said amorphous silicon thin film sample into a single or polycrystalline silicon thin film. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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14. A method for processing an amorphous silicon thin film sample into a polycrystalline silicon thin film, comprising the steps of:
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(a) generating a sequence of excimer laser pulses;
(b) homoginizing each laser pulse in said sequence in a predetermined plane;
(c) masking portions of each homoginized laser pulse in said sequence with a two dimensional pattern of substantially opaque dots to generate a sequence of pulses of dot patterned beamlets;
(d) irradiating an amorphous silicon thin film sample with said sequence of dot patterned beamlets to effect melting of portions thereof corresponding to each dot patterned beamlet pulse in said sequence of pulses of patterned beamlets; and
(e) controllably sequentially translating said sample relative to each of said pulses of dot patterned beamlets by alternating a translation direction in two perpendicular axis and in a distance less than the super lateral grown distance for said sample, to thereby process said amorphous silicon thin film sample into a polycrystalline silicon thin film.
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Specification