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Method for forming capacitor of semiconductor device

  • US 20030100162A1
  • Filed: 11/01/2002
  • Published: 05/29/2003
  • Est. Priority Date: 11/28/2001
  • Status: Abandoned Application
First Claim
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1. A method for forming a capacitor of a semiconductor device, comprising the steps of:

  • forming a bottom electrode coupled to an active area of a semiconductor substrate;

    performing an atomic layer deposition (ALD) technique to form a Ta3N5 dielectric layer with use of a gas precursor of TaCl5 on the bottom electrode; and

    forming a top electrode on the Ta3N5 dielectric layer.

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