Semiconductor device

• US 20030102521A1
• Filed: 01/13/2003
• Published: 06/05/2003
• Est. Priority Date: 06/06/2000
• Status: Active Grant

• Current Assignee: Renesas Electronics Corporation
• Original Assignee: Mitsubishi Denki Kabushiki Kaisha (Mitsubishi Electric Corporation)
• Inventors: Maeda, Shigenobu, Iwamatsu, Toshiaki, Ipposhi, Takashi, Maegawa, Shigeto
• Granted Patent: US 6,727,572 B2
• Time in Patent Office: Days
• US Class Current: 257/531
• CPC Class Codes: H01L 21/84 the substrate being other than a semiconductor body, e.g. being an insulating body
• CPC Class Codes: H01L 23/522 including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
• CPC Class Codes: H01L 23/5227 Inductive arrangements or effects of, or between, wiring layers other inductive arrangements H01L23/645
• CPC Class Codes: H01L 23/645 Inductive arrangements H01L23/647, H01L23/66 take precedence
• CPC Class Codes: H01L 27/0688 Integrated circuits having a three-dimensional layout
• CPC Class Codes: H01L 27/1203 the substrate comprising an insulating body on a semiconductor body, e.g. SOI three-dimensional layout H01L27/0688
• CPC Class Codes: H01L 28/10 Inductors
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

A semiconductor device with a spiral inductor is provided, which determines the area of an insulation layer to be provided in the surface of a wiring board thereunder. A trench isolation oxide film (19), which is a complete isolation oxide film including in part the structure of a partial isolation oxide film, is provided in a larger area of the surface of an SOI layer (3) than that corresponding to the area of a spiral inductor (SI). The trench isolation oxide film (19) is comprised of a first portion (191) having a first width and extending in a direction approximately perpendicular the surface of a buried oxide film (2), and a second portion (192) having a second width smaller than the first width and being continuously formed under the first portion (191), extending approximately perpendicular to the surface of the buried oxide film (2). The trench isolation oxide film (19) is provided such that a horizontal distance between each end surface of the second portion (192) and a corresponding end surface of the spiral inductor (SI) makes a predetermined distance or more.

Claims

1. A semiconductor device comprising:

a semiconductor substrate;

a first isolation oxide film provided in a main surface of said semiconductor substrate; and

an inductance element provided on a region in which said first isolation oxide film is formed with an interlayer insulation film therebetween,

wherein said first isolation oxide film is provided so that a horizontal distance between an end surface of said first isolation oxide film and a nearest one of end surfaces of said inductance element is not less than a vertical distance between a lower surface of said inductance element, which is opposed to said first isolation oxide film, and a surface of said semiconductor substrate.

2. The semiconductor device according to claim 1, wherein:

said semiconductor substrate is an SOI substrate comprising a substrate portion to be a foundation, a buried oxide film provided on said substrate portion, and an SOI layer provided on said buried oxide film; and

said vertical distance is a vertical distance between the lower surface of said inductance element and a surface of said substrate portion.

3. The semiconductor device according to claim 2, wherein:

said first isolation oxide film includes a first portion having a first width and extending in a depth direction with respect to a surface of said buried oxide film, and a second portion having a second width smaller than said first width and being continuously formed under said first portion, extending in a depth direction with respect to said surface of said buried oxide film to reach said buried oxide film; and

said end surface of said first isolation oxide film is an end surface of said second portion.

4. The semiconductor device according to claim 2, wherein

said first isolation oxide film has a predetermined width and extends in a depth direction with respect to a surface of said buried oxide film.

5. A semiconductor device comprising:

a semiconductor substrate;

a first isolation oxide film provided in a main surface of said semiconductor substrate;

an inductance element provided on a region in which said first isolation oxide film is formed with an interlayer insulation film therebetween; and

a conductor layer provided at a height between said first isolation oxide film and said inductance element;

wherein said conductor layer is provided so that a horizontal distance between an end surface of said conductor layer and a nearest one of end surfaces of said inductance element is not less than a vertical distance between a lower surface of said inductance element and a surface of said semiconductor substrate.

6. The semiconductor device according to claim 5, wherein

said first isolation oxide film is provided so that a horizontal distance between an end surface of said first isolation oxide film and a nearest one of end surfaces of said inductance element is not less than a vertical distance between the lower surface of said inductance element and the surface of said semiconductor substrate.

7. The semiconductor device according to claim 5, wherein

said semiconductor substrate is an SOI substrate comprising a substrate portion to be a foundation, a buried oxide film provided on said substrate portion, and an SOI layer provided on said buried oxide film;

and

said vertical distance is a vertical distance between the lower surface of said inductance element and a surface of said substrate portion.

8. The semiconductor device according to claim 7, wherein

said first isolation oxide film includes a first portion having a first width and extending in a depth direction with respect to a surface of said buried oxide film, and a second portion having a second width smaller than said first width and being formed under said first portion, extending in a depth direction with respect to said surface of said buried oxide film to reach said buried oxide film;

and

said end surface of said first isolation oxide film is an end surface of said second portion.

9. The semiconductor device according to claim 7, wherein

said first isolation oxide film has a predetermined width and extends in a depth direction with respect to a surface of said buried oxide film.

10. A semiconductor device comprising:

a semiconductor substrate;

a first isolation oxide film provided in a main surface of said semiconductor substrate;

an inductance element provided on a region in which said first isolation oxide film is formed with an interlayer insulation film therebetween; and

a dummy pattern region provided around said first isolation oxide film and divided by a second isolation oxide film having a smaller width than said first isolation oxide film in a plan view.

11. The semiconductor device according to claim 10, wherein

said first isolation oxide film is provided so that a horizontal distance between each end surface of said first isolation oxide film and a nearest one of end surfaces of said inductance element is not less than a vertical distance between a lower surface of said inductance element which is opposed to said first isolation oxide film, and a surface of said semiconductor substrate.

12. The semiconductor device according to claim 10, wherein:

said semiconductor substrate is an SOI substrate comprising a substrate portion to be a foundation, a buried oxide film provided on said substrate portion, and an SOI layer provided on said buried oxide film; and

said vertical distance is a vertical distance between the lower surface of said inductance element and a surface of said substrate portion.

13. The semiconductor device according to claim 12, wherein

said first isolation oxide film includes a first portion having a first width and extending in a depth direction with respect to a surface of said buried oxide film, and a second portion having a second width smaller than said first width and being continuously formed under said first portion, extending in a depth direction with respect to said surface of said buried oxide film to reach said buried oxide film;

and

said end surface of said first isolation oxide film is an end surface of said second portion.

14. The semiconductor device according to claim 12, wherein

said first isolation oxide film has a predetermined width and extends in a depth direction with respect to a surface of said buried oxide film.

15. The semiconductor device according to claim 10, wherein

said first isolation oxide film is rectangular in shape in a plane view;

and

said dummy pattern region has a width 5% or more of a length of a short side of said first isolation oxide film.

16. The semiconductor device according to claim 15, wherein:

said dummy pattern region includes a field portion defined by said second isolation oxide film; and

an area ratio of said second isolation oxide film in said dummy pattern region to said field portion is set to be approximately 1;

1.