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In-situ cap and method of fabricating same for an integrated circuit device

  • US 20030102552A1
  • Filed: 10/15/2002
  • Published: 06/05/2003
  • Est. Priority Date: 03/07/2001
  • Status: Active Grant
First Claim
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1. A micromachined device with an in-situ cap comprising:

  • a substrate;

    a micromachined element on said substrate;

    an in-situ cap integral with said substrate and covering said device; and

    at least one conductor extending from said element under said cap through said substrate to an external terminal.

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