In-situ cap and method of fabricating same for an integrated circuit device

• US 20030102552A1
• Filed: 10/15/2002
• Published: 06/05/2003
• Est. Priority Date: 03/07/2001
• Status: Active Grant

• Current Assignee: John R. Martin, Richard H. Morrison Jr
• Original Assignee: John R. Martin, Richard H. Morrison Jr
• Inventors: Martin, John R., Morrison, Richard H. Jr.
• Granted Patent: US 6,734,550 B2
• Time in Patent Office: Days
• US Class Current: 257/704
• CPC Class Codes: B81B 7/0064 for protecting against electromagnetic or electrostatic interferences
• CPC Class Codes: B81B 7/0077 Other packages not provided for in groups B81B7/0035 - B81B7/0074
• CPC Class Codes: B81C 2203/0136 Growing or depositing of a covering layer
• CPC Class Codes: B81C 2203/0145 Hermetically sealing an opening in the lid
• CPC Class Codes: B81C 2203/0154 Moulding a cap over the MEMS device
• CPC Class Codes: H01H 59/0009 making use of micromechanics
• CPC Class Codes: H01L 21/50 Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
• CPC Class Codes: H01L 2224/32245 the item being metallic
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48247 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/48465 the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
• CPC Class Codes: H01L 2224/73265 Layer and wire connectors
• CPC Class Codes: H01L 23/10 characterised by the material or arrangement of seals between parts, e.g. between cap and base of the container or between leads and walls of the container
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00012 Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/1433 Application-specific integrated circuit [ASIC]

Abstract

An in-situ cap for an integrated circuit device such as a micromachined device and a method of making such a cap by fabricating an integrated circuit element on a substrate; forming a support layer over the integrated circuit element and forming a cap structure in the support layer covering the integrated circuit element.

Claims

1. A micromachined device with an in-situ cap comprising:

a substrate;

a micromachined element on said substrate;

an in-situ cap integral with said substrate and covering said device; and

at least one conductor extending from said element under said cap through said substrate to an external terminal.

2. The micromachined device of claim 1 in which said cap is filled with a fluid.

3. The micromachined device of claim 2 in which said fluid is a dielectric.

4. The micromachined device of claim 2 in which the fluid is a crosslinkable material.

5. The micromachined device of claim 2 in which said cap is filled with a gas that modifies at least one surface inside the cap.

6. The micromachined device of claim 1 in which said micromachined element includes a switch.

7. The micromachined device of claim 1 in which said cap includes a hole.

8. The micromachined device of claim 7 in which said micromachined element includes an optical device and said hole is an optical port.

9. The micromachined device of claim 1 in which said cap includes a contact.

10. The micromachined device of claim 9 in which the micromachined element includes a switch and said contact is a terminal of said switch.

11. The micromachined device of claim 10 in which said cap includes a gate electrode for operating said switch.

12. The micromachined device of claim 1 in which the volume inside the cap is a vacuum.

13. A micromachined device with an in-situ cap comprising:

a substrate;

a micromachined element on said substrate;

an in-situ cap integral with said substrate and covering said device;

said micromachined element including an optical device and an optical port for accessing said optical device.

14. The micromachined device of claim 13 in which said port is in said cap.

15. The micromachined device of claim 13 in which said cap is filled with a fluid.

16. The micromachined device of claim 15 in which said liquid is a dielectric.

17. The micromachined device of claim 13 in which said cap includes a contact.

18. The micromachined device of claim 15 in which said fluid is a crosslinkable material.

19. The micromachined device of claim 15 in which said fluid is a gas and modifies at least one surface inside the cap.

20. The micromachined device of claim 13 in which the volume inside the cap is a vacuum.

21. A micromachined device with an in-situ cap comprising:

a substrate;

a micromachined element on said substrate;

an in-situ cap integral with said substrate and covering said device; and

a liquid disposed in said cap.

22. The micromachined device of claim 21 in which said liquid is a dielectric.

23. The micromachined device of claim 21 in which said micromachined device includes a switch.

24. The micromachined device of claim 21 in which said cap includes a hole.

25. The micromachined device of claim 24 in which said micromachined element is an optical device and said hole is an optical port.

26. The micromachined device of claim 21 in which said cap includes a contact.

27. The micromachined device of claim 26 in which the micromachined element includes a switch and said contact is a terminal of said switch.

28. The micromachined device of claim 27 in which said cap includes a gate electrode for operating said switch.

29. A integrated circuit device with an in-situ cap comprising:

a substrate;

a integrated circuit element on said substrate;

an in-situ cap integral with said substrate and covering said element; and

at least one conductor extending from said element under said cap through said substrate to an external terminal.

30. A integrated circuit device with an in-situ cap comprising:

a substrate;

a integrated circuit element on said substrate;

an in-situ cap integral with said substrate and covering said element;

said integrated circuit element including an optical device and an optical port for accessing said optical device.

31. A integrated circuit device with an in-situ cap comprising:

a substrate;

a integrated circuit element on said substrate;

an in-situ cap integral with said substrate and covering said element; and

a liquid disposed in said cap.