Integrated receiving/backscattering arrangement for contactless data transmission

• US 20030102961A1
• Filed: 12/02/2002
• Published: 06/05/2003
• Est. Priority Date: 12/01/2001
• Status: Active Grant

• Current Assignee: Atmel Corporation (Microchip Technology Incorporated)
• Original Assignee: Atmel Germany GmbH (Microchip Technology Incorporated)
• Inventors: Friedrich, Ulrich, Fischer, Martin, Karthaus, Udo
• Granted Patent: US 6,870,461 B2
• Time in Patent Office: Days
• US Class Current: 340/10.1
• CPC Class Codes: G01S 13/756 using a signal generator for modifying the reflectivity of the reflector G01S13/758 takes precedence
• CPC Class Codes: G01S 13/758 using a signal generator powered by the interrogation signal
• CPC Class Codes: G06K 19/0716 at least one of the integrated circuit chips comprising a sensor or an interface to a sensor
• CPC Class Codes: G06K 19/0723 the record carrier comprising an arrangement for non-contact communication, e.g. wireless communication circuits on transponder cards, non-contact smart cards or RFIDs
• CPC Class Codes: G06K 19/07749 the record carrier being capable of non-contact communication, e.g. constructional details of the antenna of a non-contact smart card
• CPC Class Codes: G06K 19/07764 the adhering arrangement making the record carrier attachable to a tire tire temperature or pressur control arrangements, see B60C23/00
• CPC Class Codes: H02J 50/001 Energy harvesting or scavenging
• CPC Class Codes: H02J 50/20 using microwaves or radio frequency waves

Abstract

A receiving/backscattering arrangement for carrying out a contactless data transmission includes an integrated circuit having two antenna contacts, a series arrangement of three high quality capacitances connected between the two antenna contacts, whereby the middle capacitance is an MOS varactor, a controllable variable voltage source connected across the MOS varactor, and a control unit that controls the voltage source. The receiving/backscattering arrangement is especially a passive transponder with a rectifier connected between the antenna contacts, or a semi-passive transponder including a battery or solar cell, to provide the required supply voltage for the circuit. The arrangement achieves a large communication range, for receiving and modulating an interrogation signal, and backscattering the modulated response signal with a high efficiency and low losses. The integrated circuit structure is compact and economical.

Claims

1. A receiving/backscattering arrangement for carrying out a contactless data transmission, by receiving an interrogation signal, modulating at least a portion of said interrogation signal to form a modulated response signal, and backscattering said response signal, wherein:

said receiving/backscattering arrangement comprises an integrated circuit;

said integrated circuit comprises at least two antenna contacts for connection of an antenna thereto;

said integrated circuit further comprises a series circuit arrangement including a first capacitance, a second capacitance, and a third capacitance, connected in series between said two antenna contacts;

said second capacitance is a varactor; and

said series circuit arrangement is adapted to modulate at least said portion of said interrogation signal to form said response signal.

2. The receiving/backscattering arrangement according to claim 1, wherein said second capacitance is connected in series between said first capacitance and said third capacitance.

3. The receiving/backscattering arrangement according to claim 1, wherein said series circuit arrangement consists of said first capacitance, said second capacitance and said third capacitance connected electrically in series with each other.

4. The receiving/backscattering arrangement according to claim 1, wherein said varactor is an MOS varactor.

5. The receiving/backscattering arrangement according to claim 1, wherein said integrated circuit further comprises a controllable voltage source having controlled voltage output terminals that are connected to said varactor to apply a controlled variable voltage thereto so as to controlledly vary an impedance of said varactor.

6. The receiving/backscattering arrangement according to claim 5, wherein said integrated circuit further comprises a control unit that is connected to said controllable voltage source and adapted to control said voltage source to controlledly vary said impedance of said varactor so that said modulated response signal includes at least a phase modulated component with respect to said portion of said interrogation signal.

7. The receiving/backscattering arrangement according to claim 6, wherein said phase modulated component of said modulated response signal is symmetrical with respect to the real part axis.

8. The receiving/backscattering arrangement according to claim 1, wherein said integrated circuit comprises a layer structure respectively forming said first capacitance and said third capacitance, wherein said layer structure comprises a semiconductor substrate, first, second and third conductive layers stacked on said substrate, a dielectric layer arranged between said first and second conductive layers, and an electrically insulating layer arranged between said second and third conductive layers.

9. The receiving/backscattering arrangement according to claim 8, wherein said third conductive layer has a low impedance connection to a reference potential, and has an area size larger than an area size of at least one of said first conductive layer and said second conductive layer.

10. The receiving/backscattering arrangement according to claim 9, wherein said third conductive layer is a single integral layer that is common to both said first capacitance and said third capacitance.

11. The receiving/backscattering arrangement according to claim 8, wherein said dielectric layer has a thickness of less than 0.5 μ

m, and said insulating layer has a thickness greater than 1 μ

m.

12. The receiving/backscattering arrangement according to claim 8, wherein said conductive layers are respective metal layers.

13. The receiving/backscattering arrangement according to claim 8, wherein said conductive layers are respective layers of highly doped semiconductor material.

14. The receiving/backscattering arrangement according to claim 8, wherein:

said first conductive layer includes a first layer first portion and a first layer second portion that are electrically isolated from each other;

said second conductive layer includes a second layer first portion and a second layer second portion that are electrically isolated from each other;

said dielectric layer includes a first dielectric layer portion between said first layer first portion and said second layer first portion, and a second dielectric layer portion between said first layer second portion and said second layer second portion;

said first layer first portion and said second layer first portion with said first dielectric layer portion therebetween form said first capacitance; and

said first layer second portion and said second layer second portion with said second dielectric layer portion therebetween form said third capacitance.

15. The receiving/backscattering arrangement according to claim 1, wherein said receiving/backscattering arrangement is a passive transponder that does not include a self-contained power source and does not include a physical connection to an external power source.

16. The receiving/backscattering arrangement according to claim 1, wherein said integrated circuit further comprises a modulation controller having controlled voltage output terminals that are connected to said varactor to apply a controlled variable voltage thereto so as to controlledly vary an impedance of said varactor, and wherein said receiving/backscattering arrangement is a semi-passive transponder further comprising a battery or a solar cell as a voltage supply connected to said modulation controller to apply an operating supply voltage to said modulation controller.

17. The receiving/backscattering arrangement according to claim 16, wherein said receiving/backscattering arrangement further comprises a signal detector circuit connected to said antenna contacts to receive and detect said interrogation signal, and a main control unit connected to said signal detector circuit and to said modulation controller, wherein said voltage supply is further connected to said signal detector circuit and to said main control unit to apply said operating supply voltage thereto.

18. The receiving/backscattering arrangement according to claim 1, wherein said integrated circuit further comprises a modulation controller having controlled voltage output terminals that are connected to said varactor to apply a controlled variable voltage thereto so as to controlledly vary an impedance of said varactor, wherein said receiving/backscattering arrangement is a semi-passive wireless sensor arrangement and said modulated response signal is a sensor data signal, and wherein said receiving/backscattering arrangement further comprises a main control unit connected to said modulation controller, at least one sensor connected to said main control unit, and a battery or a solar cell as a voltage supply connected to said modulation controller, said main control unit, and said at least one sensor to apply an operating supply voltage respectively thereto.

19. A communication system comprising the receiving/backscattering arrangement according to claim 1 in combination with a transmitter/receiver device for transmitting said interrogation signal that is received, modulated and backscattered by said receiving/backscattering arrangement.

20. A receiving/backscattering arrangement comprising:

an antenna; and

an integrated circuit, which comprises;

a first conductor line connected to a first terminal of said antenna;

a second conductor line connected to a second terminal of said antenna; and

a first capacitance, a second capacitance, and a third capacitance connected successively in series with one another between said first conductor line and said second conductor line, wherein said second capacitance is a variable capacitance varactor.

21. The receiving/backscattering arrangement according to claim 20, wherein said integrated circuit further comprises a controllable variable voltage supply connected to a first connection node between said first capacitance and said varactor and to a second connection node between said varactor and said third capacitance.

22. The receiving/backscattering arrangement according to claim 20, wherein said integrated circuit further comprises a rectifier connected between said first conductor line and said second conductor line, in parallel with said first, second and third capacitances.

23. The receiving/backscattering arrangement according to claim 20, wherein said integrated circuit comprises a layer structure respectively forming said first capacitance and said third capacitance, wherein said layer structure comprises a semiconductor substrate, first, second and third conductive layers stacked on said substrate, a dielectric layer arranged between said first and second conductive layers, and an electrically insulating layer arranged between said second and third conductive layers, with said third conductive layer arranged on said substrate.

24. The receiving/backscattering arrangement according to claim 23, wherein:

said first conductive layer includes a first layer first portion and a first layer second portion that are electrically isolated from each other;

said second conductive layer includes a second layer first portion and a second layer second portion that are electrically isolated from each other;

said dielectric layer includes a first dielectric layer portion between said first layer first portion and said second layer first portion, and a second dielectric layer portion between said first layer second portion and said second layer second portion;

said first layer first portion and said second layer first portion with said first dielectric layer portion therebetween form said first capacitance; and

said first layer second portion and said second layer second portion with said second dielectric layer portion therebetween form said third capacitance.