Method of detecting protrusion of inspection object from palette and method of fabricating semiconductor device

• US 20030104642A1
• Filed: 05/15/2002
• Published: 06/05/2003
• Est. Priority Date: 07/18/2001
• Status: Active Grant

• Current Assignee: Renesas Technology Corporation (Renesas Electronics Corporation)
• Original Assignee: Mitsubishi Denki Kabushiki Kaisha (Mitsubishi Electric Corporation)
• Inventors: Semba, Shinji, Ijichi, Toshiya
• Granted Patent: US 6,955,264 B2
• Time in Patent Office: Days
• US Class Current: 438/16
• CPC Class Codes: G01N 21/956 Inspecting patterns on the surface of objects contactless testing of electronic circuits G01R31/308; testing currency G07D; manufacturing processes per se of semiconductor devices implementing a measuring step H01L22/10

Abstract

In order to provide a method of detecting protrusion of an inspection object from a palette improved to be capable of making highly precise detection and reducing a socket breakage ratio, an inspection object is introduced into each of a plurality of pockets provided on the surface of a palette, which in turn is transported. A reflection level of the inspection object stored in each of the plurality of pockets is measured every palette with a reflection type photoelectric sensor. The maximum value and the minimum value of the reflection level are obtained from data of every palette, for calculating a dispersion width defined by the difference between the maximum value and the minimum value. The dispersion width is compared with a previously set determination threshold, for determining whether or not the dispersion width is greater than the determination threshold.

Claims

1. A method of detecting protrusion of an inspection object from a palette, comprising steps of:

introducing an inspected object into each of a plurality of pockets provided on the surface of a palette and transporting said palette;

measuring a reflection level of said inspection object stored in each of said plurality of pockets every said palette with a reflection type photoelectric sensor;

obtaining the maximum value and the minimum value of said reflection level from data of every said palette for calculating a dispersion width defined by the difference between the maximum value and the minimum value; and

comparing said dispersion width with a previously set determination threshold for determining whether or not said dispersion width is greater than said determination threshold.

2. The method of detecting protrusion of an inspection object from a palette according to claim 1, wherein said inspection object includes an IC.

3. The method of detecting protrusion of an inspection object from a palette according to claim 1, arranging measuring points for said reflection level of said inspection object in two rows along the direction of said transportation on said inspection object,

for measuring said reflection level of said inspection object on two points aligning with each other on one of said two rows and two points aligning with each other on the remaining one of said two rows.

4. The method of detecting protrusion of an inspection object from a palette according to claim 1, detecting protrusion of said inspection object from corresponding said pocket as well as whether or not said inspection object overlaps with another inspection object in said corresponding pocket by said determination.

5. The method of detecting protrusion of an inspection object from a palette according to claim 1, wherein said plurality of pockets are arranged in two rows along the direction of said transportation on said palette.

6. The method of detecting protrusion of an inspection object from a palette according to claim 1, wherein the distance between said inspection object and said reflection type photoelectric sensor is set to 1.0 mm to 2.0 mm for measuring said reflection level.

7. A method of fabricating a semiconductor device comprising steps of:

introducing an IC into each of a plurality of pockets provided on the surface of a palette and transporting said palette;

measuring a reflection level of said IC stored in each of said plurality of pockets every said palette with a reflection type photoelectric sensor;

obtaining the maximum value and the minimum value of said reflection level from data of every said palette for calculating a dispersion width defined by the difference between the maximum value and the minimum value; and

comparing said dispersion width with a previously set determination threshold for determining whether or not said dispersion width is greater than said determination threshold.