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Group-III nitride compound semiconductor device

  • US 20030107053A1
  • Filed: 09/30/2002
  • Published: 06/12/2003
  • Est. Priority Date: 03/31/2000
  • Status: Active Grant
First Claim
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1. A Group III nitride compound semiconductor device which is a device having an outermost diameter of not smaller than 700 μ

  • m, wherein a distance from an n electrode to a farthest point of a p electrode is not larger than 500 μ

    m.

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