Group-III nitride compound semiconductor device
First Claim
Patent Images
1. A Group III nitride compound semiconductor device which is a device having an outermost diameter of not smaller than 700 μ
- m, wherein a distance from an n electrode to a farthest point of a p electrode is not larger than 500 μ
m.
1 Assignment
0 Petitions
Accused Products
Abstract
An object of the present invention is to provide a large-size light-emitting device from which uniform light emission can be obtained.
That is, in the present invention, in a device having an outermost diameter of not smaller than 700 μm, a distance from an n electrode to a farthest point of a p electrode is selected to be not larger than 500 μm.
-
Citations
12 Claims
-
1. A Group III nitride compound semiconductor device which is a device having an outermost diameter of not smaller than 700 μ
- m, wherein a distance from an n electrode to a farthest point of a p electrode is not larger than 500 μ
m. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
- m, wherein a distance from an n electrode to a farthest point of a p electrode is not larger than 500 μ
-
11. A Group III nitride compound semiconductor device which is a device having an outermost diameter of not smaller than 700 μ
- m, wherein a distance X μ
m from any point on a p electrode to an n electrode satisfies the requirement;
- m, wherein a distance X μ
-
12. A Group III nitride compound semiconductor device which is a device having an outermost diameter of not smaller than 700 μ
- m, and having an n-type semiconductor layer with a resistivity of 0.004 to 0.01 Ω
·
cm and a thickness of 3 to 5 μ
m, wherein a distance from an n electrode to a farthest point of a p electrode is in a range of from 300 to 500 μ
m.
- m, and having an n-type semiconductor layer with a resistivity of 0.004 to 0.01 Ω
Specification