Ultra-rugged biometric I.C. sensor and method of making the same
First Claim
1. A semiconductor device for biometric identification, comprising:
- a rigid sensing area;
a control electronics area; and
at least one dielectric layer disposed in both said control electronics area and said sensing area, the dielectric layer including an etched region above said control electronics area, the etched region creating a higher topology in said sensing area than in said control electronics area.
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Abstract
An ultra-rugged biometric integrated circuit sensor and method for constructing the same is provided. The sensor comprises a sensing area and a control electronics area, and, as result of its construction, the sensor has a topology whereby the sensing area is elevated with respect to the control electronics area. In other words, a depression is created on the sensor surface that allows the control electronics to escape damaging impacts by external forces. According to one embodiment, the sensing area and control electronics area are structures such there is no overlap between either area, except where the sensing area is electrically coupled to the control electronics. According to another embodiment, the sensor further comprises a electric static discharge structure that creates a least resistant path to ground. The electric static discharge structure further protects the control electronics from high voltage surges encountered in normal operation.
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Citations
23 Claims
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1. A semiconductor device for biometric identification, comprising:
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a rigid sensing area;
a control electronics area; and
at least one dielectric layer disposed in both said control electronics area and said sensing area, the dielectric layer including an etched region above said control electronics area, the etched region creating a higher topology in said sensing area than in said control electronics area. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A semiconductor device for biometric identification, comprising:
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a rigid sensing area;
a control electronics area;
at least one dielectric layer disposed in both said control electronics area and said rigid sensing area, the dielectric layer including an etched region above said control electronics area; and
a passivation layer, disposed over said dielectric layer, wherein the etched region creates a higher topology in said rigid sensing area than in said control electronics area with respect to said passivation layer. - View Dependent Claims (12, 13, 14, 15, 16)
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17. A semiconductor device for biometric identification, comprising:
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a rigid sensing area, said rigid sensing area including a capacitor plate;
a control electronics area, said control electronics area including a circuit device; and
at least one dielectric layer disposed in both said control electronics area and said sensing area, the dielectric layer including an etched region above said circuit device;
wherein said rigid sensing area and said control electronics area do not cross over, except where said capacitor plate is electrically coupled to said circuit device. - View Dependent Claims (18, 19, 20, 21, 22, 23)
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Specification