Integrated ceramic module and microwave dielectric composition

• US 20030107455A1
• Filed: 10/22/2002
• Published: 06/12/2003
• Est. Priority Date: 10/23/2001
• Status: Active Grant

• Current Assignee: Fujitsu Limited
• Original Assignee: Fujitsu Limited
• Inventors: Imanaka, Yoshihiko, Takenouchi, Masatoshi
• Granted Patent: US 6,733,890 B2
• Time in Patent Office: Days
• US Class Current: 333/185
• CPC Class Codes: H03H 2001/0085 Multilayer, e.g. LTCC, HTCC, green sheets
• CPC Class Codes: H03H 7/09 Filters comprising mutual inductance
• CPC Class Codes: H03H 7/1708 Comprising bridging elements, i.e. elements in a series path without own reference to ground and spanning branching nodes of another series path H03H7/07 takes precedence
• CPC Class Codes: H03H 7/1775 Parallel LC in shunt or branch path H03H7/1791 takes precedence
• CPC Class Codes: H05K 1/0306 Inorganic insulating substrates, e.g. ceramic, glass
• CPC Class Codes: Y10T 428/31678 Of metal

Abstract

An integrated ceramic module is formed of a first ceramic dielectric layer containing a glass as a sintering agent and having a high dielectric constant and high Q value, formed with an electronic component, and a second ceramic dielectric layer containing a glass as a sintering agent and having a low dielectric constant and a high Q value, formed with a signal transmission line.

Claims

1. An integrated ceramic module, comprising:

a first ceramic dielectric layer containing a glass as a sintering agent and having a high Q value, said first ceramic dielectric layer being formed with an electronic component; and

a second ceramic dielectric layer laminated on said first ceramic dielectric layer, said second ceramic dielectric layer containing a glass as a sintering agent and having a high Q value, said second ceramic dielectric layer being formed with a signal transmission line.

2. The integrated ceramic module as claimed in claim 1, wherein said glass contains a crystallized glass.

3. The integrated ceramic module as claimed in claim 1, wherein said first ceramic dielectric layer and said second ceramic dielectric layer have substantially the same firing shrinkage.

4. The integrated ceramic module as claimed in claim 1, wherein said signal transmission line is formed of a metal containing at least one element selected from the group consisting of Ag, Au, Pt, Cu and Pd.

5. The integrated ceramic module as claimed in claim 1, wherein said glass belongs to the same material system in each of said first and second ceramic dielectric layers.

6. The integrated ceramic module as claimed in claim 1, wherein said glass is formed, in each of said first and second ceramic dielectric layers, of a silicate glass

7. The integrated ceramic module as claimed in claim 1, wherein each of said first and second ceramic dielectric layers is formed of a composite body of an oxide ceramic and an oxide glass or a crystallized oxide glass.

8. The integrated ceramic module as claimed in claim 7, wherein said oxide ceramic is formed of a material selected for the group consisting of alumina (Al₂O₃), quartz (SiO₂), BaTi₄O₉, Ba₂Ti₉O₂₀, CaZrO₃, CaTiO₃, MgTiO₃, ZrSnTiO₄, Ba(Zn_1/3Ta_2/3)O₃, Ba (Zn_1/3Nb_2/3)O₃, Ba (Mg_1/3Ta_2/3)O₃, Ba (Co_1/3Nb_2/3)O₃, Ba(Ni_1/3Ta_2/3)O₃, BaTiO₃, SrTiO₃, MgO, TiO₂, Nd₂Ti₂O₇ and CaMgSi₂O₆.

9. The integrated ceramic module as claimed in claim 7, wherein said oxide glass and said crystallized oxide glass are formed of a lead-free glass material having a softening point in the temperature range of 400-900°

C.

11. The high-dielectric microwave dielectric composition as claimed in claim 8, wherein said amorphous oxide glass is a glass free from Pb and containing an SiO₂ component and an Al₂O₃ component such that total of said SiO₂ component and Al₂O₃ component is 85 weight % or more.

19. The high-dielectric microwave dielectric composition as claimed in claim 1, wherein said microwave dielectric composition has a bulk density of 98% or more when fired at 900°

C.

10. A high-dielectric microwave dielectric composition, comprising:

oxide ceramic particles; and

an amorphous oxide glass in which said oxide ceramic particles are dispersed, said oxide ceramic particles containing at least one component selected from the group consisting of BaTi₄O₉, Ba₂Ta₉O₂₀, Ba (Zn_1/3Ta_2/3)O₃, Ba (Zn_1/3Nb_2/3)O₃, Ba(Mg_1/3Ta_2/3)O₃, Ba(Co_1/3Ta_2/3)O₃, Ba(Co_1/3Nb_2/3)O₃, Ba(Ni_1/3Ta_2/3)O₃ and TiO₂.

12. The high-dielectric microwave composition as claimed in claim 10, wherein said amorphous oxide glass has a softening point in the temperature range of 400-900°

C.

13. The high-dielectric microwave dielectric composition as claimed in claim 10, wherein each of said oxide ceramic particle and said amorphous oxide glass has a Q value of 200 or more in the frequency band of 1 GHz or more but not exceeding 100 GHz.

18. The high-dielectric microwave dielectric composition as claimed in claim 10 further comprising at least one of alumina having a purity of 99% or more, a quartz glass having a purity of 99% or more, CaZrO₃, BaTiO₃, MgO, ZrSnTiO₄, CaTiO₃, MgTiO₃ and SrTiO₃.

14. A microwave dielectric composition, comprising:

oxide ceramic particles and a crystallized oxide glass in which said oxide ceramic particles are dispersed,

said oxide ceramic particles containing at least one component selected from the group consisting of BaTi₄O₉, Ba₂Ta₉O₂₀, Ba (Zn_1/3Ta_2/3)O₃, Ba (Zn_1/3Nb_2/3)O₃, Ba(Mg_1/3Ta_2/3)O₃, Ba (Co_1/3Ta_2/3)O₃, Ba(CO_1/3Nb_2/3)O₃, Ba(Ni_1/3Ta_2/3)O₃ and TiO₂.

15. The microwave dielectric composition as claimed in claim 14, wherein said crystallized oxide glass is a glass causing precipitation of a crystalline phase of CaSiO₃, Nd₂TiO₇ and CaMgSi₂O₄.

16. The high-dielectric microwave dielectric composition as claimed in claim 14, wherein said crystallized oxide glass is a glass free from Pb having a softening point in the range of 400-900°

C.

17. The high-dielectric microwave dielectric composition as claimed in claim 14, wherein each of said oxide ceramic particle and said crystallized oxide glass has a Q value of 200 or more in the frequency band of 1 GHz or more but not exceeding 100 GHz.

20. A low-K dielectric microwave dielectric composition, comprising:

alumina particles having a purity of 99% or more; and

an amorphous oxide glass in which said alumina particles are dispersed.

21. The low-dielectric microwave dielectric composition as claimed in claim 20, wherein said amorphous oxide glass is a Pb-free glass containing an SiO₂ component and an Al₂O₃ component such that a total of said SiO₂ component and said Al₂O₃ component becomes 85 weight % or more.

22. The low-dielectric microwave dielectric composition as claimed in claim 20, wherein said amorphous oxide glass has a softening point in the range of 400-900°

C.

23. The low-dielectric microwave dielectric composition as claimed in claim 20, wherein each of said alumina and said oxide glass has a Q value of 200 or more in the frequency band of 1 GHz or more but not exceeding 500 GHz.

26. The low-K dielectric microwave dielectric composition as claimed in claim 20, wherein said microwave composition has a bulk density of 98% or more when fired at 900°

C.

24. A low-K dielectric microwave dielectric composition, comprising:

alumina particles having a purity of 99% or more; and

a crystallized oxide glass in which said alumina particles are dispersed.

25. The low-K dielectric microwave dielectric composition as claimed in claim 24, wherein said crystallized glass causes precipitation of a crystalline phase of any of CaSiO₃, Nd₂TiO₇ and CaMgSi₂O4.