Micro mirror array

• US 20030107794A1
• Filed: 12/11/2001
• Published: 06/12/2003
• Est. Priority Date: 12/11/2001
• Status: Abandoned Application

• Current Assignee: Rosemount Aerospace, Inc. (Raytheon Technologies Corporation d/b/a RTX)
• Original Assignee: Rosemount Aerospace, Inc. (Raytheon Technologies Corporation d/b/a RTX)
• Inventors: Siekkinen, James W., Yang, Xiaofeng
• Application Number:
  US10/013,377
• Publication Number:
  US 20030107794A1
• Time in Patent Office: Days
• US Class Current: 359/291
• CPC Class Codes: B81B 2201/042 Micromirrors, not used as optical switches
• CPC Class Codes: B81C 1/00246 Monolithic integration, i.e. micromechanical structure and electronic processing unit are integrated on the same substrate
• CPC Class Codes: G02B 2006/12104 Mirror; Reflectors or the like
• CPC Class Codes: G02B 26/0841 the reflecting element being moved or deformed by electrostatic means
• CPC Class Codes: G02B 6/122 Basic optical elements, e.g. light-guiding paths
• CPC Class Codes: G02B 6/3518 the reflective optical element being an intrinsic part of a MEMS device, i.e. fabricated together with the MEMS device MEMS devices in general B81B; manufacture of MEM devices in general B81C; micromechanical devices controlling the direction of light G02B26/0833
• CPC Class Codes: G02B 6/356 in an optical cross-connect device, e.g. routing and switching aspects of interconnecting different paths propagating different wavelengths to (re)configure the various input and output links switching polarized beams G02B6/3594; power equalizers G02B6/356 and G02B6/3594; path selecting means H04Q11/0001
• CPC Class Codes: G02B 6/357 Electrostatic force electrostatic forces controlling reflecting elements in general G02B26/0841
• CPC Class Codes: G02B 6/3584 constructional details of an associated actuator having a MEMS construction, i.e. constructed using semiconductor technology such as etching MEMS per se B81B, B81C
• CPC Class Codes: G02B 6/359 of the position of the moving element itself during switching, i.e. without monitoring the switched beams

Abstract

A micro mirror array including an upper wafer having a plurality of movable reflective surfaces located thereon and a lower wafer located below and coupled to the upper wafer. The lower wafer has an upper surface including a plurality of electrodes located thereon for controlling the movement of the movable reflective surfaces when a voltage is applied thereto. The lower wafer further includes control electronics generally spaced away from the upper surface and coupled to the electrodes for controlling the voltages applied to the electrodes.

Claims

1. A micro mirror array comprising:

an upper wafer including a plurality of movable reflective surfaces located thereon; and

a lower wafer located below and coupled to said upper wafer, said lower wafer having an upper surface including a plurality of electrodes located thereon for controlling the movement of said movable reflective surfaces when a voltage is applied thereto, said lower wafer including control electronics generally spaced away from said upper surface and coupled to said electrodes for controlling the voltages applied to said electrodes.

2. The array of claim 1 wherein said upper wafer includes a silicon layer, and wherein said reflective surface are located on said silicon layer.

3. The array of claim 1 wherein said upper wafer includes a base portion and a plurality of movable portions rotatably coupled to base portion, and wherein each reflective surface is located on one of said movable portions.

4. The array of claim 3 wherein each movable portion is coupled to said base portion by at least one arm, and wherein said at least one arm includes a sensor located thereon such that said sensor can sense rotation of said movable portion relative to said base portion.

5. The array of claim 4 wherein each sensor is a piezoresistor.

6. The array of claim 1 wherein said upper wafer includes at least a portion of at least one silicon-on-insulator wafer.

7. The array of claim 1 wherein each reflective surface is independently movable about two generally perpendicular axes.

8. The array of claim 1 wherein said upper wafer is eutectic bonded or thermo compression bonded to said lower wafer.

9. The array of claim 1 wherein each reflective surface is located on a conductive movable portion such that a voltage can be applied to an associated electrode to cause movement of the associated movable portion and reflective surface.

10. The array of claim 9 wherein each electrode is located below an associated movable portion and wherein said lower wafer includes a plurality of output pads electrically coupled to said control electronics and located adjacent an outer perimeter of said lower wafer.

11. The array of claim 10 further comprising a controller coupled to said plurality of output pads to control the voltages applied to said electrodes by said control electronics to thereby control the movement of said plurality of reflective surfaces.

12. The array of claim 1 wherein at least two electrodes are located below each of said reflective surfaces such that a voltage can be applied to said electrodes to cause the associated reflective surfaces to move in at least two directions.

13. The array of claim 1 wherein at least four electrodes are located below each of said reflective surfaces such that a voltage can be applied to either of a first two of said set of four electrodes to cause the associated reflective surface to rotate about a first axis, and such that a voltage can be applied to either of the other two of said set of four electrodes to cause said reflective surface to rotate about a second axis.

14. The array of claim 1 wherein said control electronics includes CMOS logic circuitry.

15. The array of claim 1 wherein said lower wafer is a silicon wafer including a silicon layer and a insulating layer located thereon, and wherein said control electronics are located below said upper surface and adjacent to the junction between said silicon layer and said insulating layer.

16. The array of claim 1 wherein said upper wafer includes a plurality of generally upwardly extending legs that extend upwardly beyond said plurality of reflective surfaces.

17. A micro mirror array comprising:

an upper wafer including a base portion and a plurality of movable portions rotatably coupled to said base portion, each of said movable portions having a reflective surface located thereon; and

a lower wafer located below and coupled to said upper wafer, said lower wafer including a plurality of electrodes, each electrode being located adjacent to one of said movable portions such that a voltage can be applied to said electrodes to cause an associated one of the movable portions to move, said lower wafer including control electronics integrated therein and electrically coupled to said electrodes.

18. A method for manufacturing a micro mirror array comprising the steps of:

providing an upper wafer including a support layer and a mirror-receiving surface located over said support layer;

providing a lower wafer including a plurality of electrodes and control electronics coupled to said electrodes for controlling a voltage applied to said electrodes;

coupling said upper wafer to said lower wafer;

removing said support layer to expose said mirror-receiving surface; and

depositing a reflective material on said mirror-receiving surface to form a plurality of mirrors, each mirror being located above an associated electrode on said lower wafer.

19. The method of claim 18 wherein said coupling step includes eutectic bonding or thermo compression bonding.

20. The method of claim 18 further comprising the step of etching through said mirror-receiving surface to define a base portion and a plurality of a movable portions coupled to said base portion, each movable portion having a portion of said reflective material located thereon.

21. The method of claim 18 wherein said first providing step includes providing a cavity wafer and a mirror wafer, and coupling said cavity wafer and said mirror wafers together to form said upper wafer.

22. The method of claim 21 wherein said cavity wafer and said mirror wafers are both silicon-on-insulator wafers, and wherein said first providing step further includes the step of, before coupling said cavity wafer and said mirror wafer together, etching a lower silicon layer of said mirror wafer to define a base portion and a plurality of movable portions coupled to said base portion.

23. The method of claim 22 wherein said etching of said movable portions includes etching said mirror wafer such that each movable portion is coupled to said base portion by at least one arm.

24. The method of claim 23 wherein said first providing step further includes, after coupling said cavity wafer and mirror wafer together, removing a lower silicon layer and insulating layer of said cavity wafer.

25. The method of claim 24 wherein said first providing step further includes etching a plurality of cavities in said cavity wafer to expose each of said movable portions.

26. The method of claim 25 further comprising the step of, after said coupling step, removing an upper silicon layer of said mirror wafer to expose an insulating layer of said mirror wafer.

27. The method of claim 26 further comprising the step of removing said insulating layer of said mirror wafer to expose said movable portions.

28. The method of claim 27 further comprising the step of depositing a reflective surface on each of said movable portions to form a plurality of mirrors.

29. The method of claim 21 wherein said cavity wafer and said mirror wafer are both silicon-on-insulator wafers, and wherein the first providing step further includes removing a lower silicon layer and an insulating layer of said cavity wafer after said cavity wafer and said mirror wafer are coupled together.

30. The method of claim 29 wherein said first providing step includes etching said cavity wafer to form a plurality of cavities therein, each cavity exposing a lower silicon layer of said mirror wafer.

31. The method of claim 30 further comprising the step of, after said coupling step, removing an upper silicon layer and an insulating layer of said mirror wafer to expose said lower silicon layer of said mirror wafer.

32. The method of claim 31 further comprising the step of etching said lower silicon layer of said mirror wafer to form a base portion and a plurality of movable portions coupled to said base portion.

33. The method of claim 32 wherein said etching of said movable portions includes etching said movable portions such that each movable portion is movably coupled to said base portion by at least one arm.

34. The method of claim 33 further comprising the step of depositing a reflective surface on each of said movable portions to form a plurality of mirrors.

35. The method of claim 18 wherein said second providing step includes providing a lower wafer having an upper surface with said electrodes located thereon, and wherein said control electronics are located generally below said upper surface.

36. A method for manufacturing a micro mirror array comprising the steps of:

providing an upper wafer including a mirror-receiving surface;

providing a lower wafer including a plurality of electrodes and control electronics coupled to said electrodes for controlling a voltage applied to said electrodes;

coupling said upper wafer to said lower wafer; and

etching said mirror-receiving surface to form a base portion and a plurality of movable portions coupled to said base portion, and wherein each movable portion is located over one of said electrodes.

37. A micro mirror array comprising:

a wafer including a base and a plurality of movable portions, each movable portion having a reflective surface located thereon and being coupled to said base by at least one arm such that each movable portion can rotate about the associated at least one arm, each arm having a piezoresistor located thereon to detect any rotation of the associated movable portion relative to said base; and

a plurality of electrodes located adjacent to said reflective surfaces for controlling the movement of said movable reflective surfaces when a voltage is applied to said electrodes

38. The array of claim 37 wherein each movable portion is coupled to said base by a pair of arm located on opposed sides of said mirror, and wherein each arm includes a pizeoresistor location thereon to detect any rotation of the associated movable portion relative to said base.