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Silicon semiconductor wafer, and process for producing a multiplicity of semiconductor wafers

  • US 20030109139A1
  • Filed: 11/14/2002
  • Published: 06/12/2003
  • Est. Priority Date: 12/06/2001
  • Status: Active Grant
First Claim
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1. A silicon semiconductor wafer having a diameter of greater than or equal to 200 mm comprising a polished front surface and a polished back surface and a maximum local flatness value SFQRm-1 of less than or equal to 0.13 μ

  • m, based on a surface grid of segments with a size of 26 mm×

    8 mm on the front surface, wherein the maximum local height deviation P/V(10×

    10)max of the front surface from an ideal plane is less than or equal to 70 nm, based on sliding subregions with dimensions of 10 mm×

    10 mm.

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