Magnetic memory device having magnetic shield layer, and manufacturing method thereof
First Claim
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1. A magnetic memory device comprising:
- a first wiring layer which runs in a first direction;
a memory element which is arranged above the first wiring layer;
second wiring layers which are arranged on the memory element and run in a second direction different from the first direction; and
a first magnetic shield layer which is formed on a side surface of said each second wiring layer and formed around a side surface of the memory element.
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Abstract
A magnetic memory device includes a first wiring layer which runs in the first direction, a memory element which is arranged above the first wiring layer, second wiring layers which are arranged on the memory element and run in a second direction different from the first direction, and a first magnetic shield layer which is formed on the side surface of each second wiring layer and formed around the side surface of the memory element.
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Citations
49 Claims
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1. A magnetic memory device comprising:
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a first wiring layer which runs in a first direction;
a memory element which is arranged above the first wiring layer;
second wiring layers which are arranged on the memory element and run in a second direction different from the first direction; and
a first magnetic shield layer which is formed on a side surface of said each second wiring layer and formed around a side surface of the memory element. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32, 33, 34, 35)
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36. A magnetic memory device manufacturing method, comprising:
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forming a first wiring layer which runs in a first direction;
selectively forming a memory element above the first wiring layer;
forming a first insulating layer around the memory element;
forming, on the first insulating layer and the memory element, second wiring layers which run in a second direction different from the first direction;
removing a portion of the first insulating layer not covered with the second wiring layers by using the second wiring layers as a mask; and
forming a first magnetic shield layer over the second wiring layers to cover the first and second wiring layers and the memory element. - View Dependent Claims (37, 38, 39, 40, 41, 42, 43, 44, 45, 46, 47, 48)
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49. A magnetic memory device manufacturing method, comprising:
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forming a first wiring layer which runs in a first direction;
forming above the first wiring layer a straight memory element which runs in the first direction;
forming a first insulating layer around the memory element;
forming, on the first insulating layer and the memory element, second wiring layers which run in a second direction different from the first direction;
removing portions of the first insulating layer and the memory element which are not covered with the second wiring layers by using the second wiring layers as a mask to form the memory element into an island shape; and
forming a first magnetic shield layer over the second wiring layers.
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Specification