Thin film transistor and display device having the same

• US 20030111663A1
• Filed: 08/16/2002
• Published: 06/19/2003
• Est. Priority Date: 12/13/2001
• Status: Active Grant

• Current Assignee: Fuji Xerox Company Limited (Xerox Holdings Corp.)
• Original Assignee: Fuji Xerox Company Limited (Xerox Holdings Corp.)
• Inventors: Yagi, Shigeru
• Granted Patent: US 6,713,785 B2
• Time in Patent Office: Days
• US Class Current: 257/59
• CPC Class Codes: G02F 1/1368 in which the switching element is a three-electrode device G02F1/136277 takes precedence
• CPC Class Codes: H01L 27/12 the substrate being other than a semiconductor body, e.g. an insulating body
• CPC Class Codes: H01L 29/458 for thin film silicon, e.g. source or drain electrode
• CPC Class Codes: H01L 29/4908 for thin film semiconductor, e.g. gate of TFT
• CPC Class Codes: H01L 29/66742 Thin film unipolar transistors
• CPC Class Codes: H01L 29/78603 characterised by the insulating substrate or support H01L29/78657 takes precedence
• CPC Class Codes: H01L 29/78681 having a semiconductor body comprising AIIIBV or AIIBVI or AIVBVI semiconductor materials, or Se or Te

Abstract

A thin film transistor has, on a transparent substrate, a transparent semiconductor layer containing nitrogen, hydrogen and one or more elements selected from Al, Ga and In, a transparent source electrode and a transparent drain electrode at least partially in contact with the transparent semiconductor layer, and a transparent gate electrode.

Claims

1. A thin film transistor comprising, on a transparent substrate:

a transparent semiconductor layer containing nitrogen, hydrogen and one or more elements selected from Al, Ga and In;

a transparent source electrode and a transparent drain electrode at least partially in contact with the transparent semiconductor layer; and

a transparent gate electrode.

2. The thin film transistor according to claim 1, comprising a transparent pixel electrode disposed through an arbitrary layer and/or electrode on the gate electrode.

3. The thin film transistor according to claim 1, wherein the transparent semiconductor layer further contains one or more elements selected from Be, Mg, Ca, C, Si, Ge and Pb.

4. The thin film transistor according to claim 1, wherein the transparent semiconductor layer further contains one or more elements selected from C, Si, Ge and Pb in a region in contact with the transparent source electrode and the transparent drain electrode.

5. The thin film transistor according to claim 1, wherein a transparent insulative layer is disposed between the transparent gate electrode and the transparent semiconductor layer, and the transparent insulative layer is a semiconductor layer containing nitrogen, 0.5 atomic % or more and 50 atomic % or less of hydrogen and one or more elements selected from Al, Ga and In.

6. The thin film transistor according to claim 1, wherein a transparent insulative layer is disposed between the transparent gate electrode and the transparent semiconductor layer, and the transparent insulative layer comprises amorphous silicon nitride.

7. The thin film transistor according to claim 1, wherein a transparent insulative layer is disposed between the transparent gate electrode and the transparent semiconductor layer, and the transparent insulative layer comprises silicon oxide.

8. The thin film transistor according to claim 2, wherein the transparent pixel electrode substantially covers the transparent semiconductor layer, the source electrode, and the drain electrode.

9. A display device comprising a thin film transistor having, on a transparent substrate, a transparent semiconductor layer containing nitrogen, hydrogen and one or more elements selected from Al, Ga and In, a transparent source electrode and a transparent drain electrode at least partially in contact with the transparent semiconductor layer, and a transparent gate electrode.