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Inductively coupled plasma system

  • US 20030111963A1
  • Filed: 09/30/2002
  • Published: 06/19/2003
  • Est. Priority Date: 12/14/2001
  • Status: Active Grant
First Claim
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1. An inductively coupled plasma apparatus comprising:

  • a process chamber having a wafer susceptor on which a substrate is installed;

    a top plasma source chamber which is installed on the process chamber;

    a reactor, which is installed in the top plasma source chamber, having a channel through which a gas flows, wherein the reactor supplies plasma reaction products to the process chamber;

    an inductor, having two ends, is installed between the top plasma source chamber and the reactor and is wound around the reactor;

    an opening which is positioned within a circumferential space in which the inductor is installed between the reactor and the process chamber; and

    a shutter operable to open and close the opening.

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