Power module and process for producing power modules

• US 20030112605A1
• Filed: 11/25/2002
• Published: 06/19/2003
• Est. Priority Date: 11/23/2001
• Status: Abandoned Application

• Current Assignee: Wolfram Hable
• Original Assignee: Wolfram Hable
• Inventors: Hable, Wolfram
• Application Number:
  US10/304,129
• Publication Number:
  US 20030112605A1
• Time in Patent Office: Days
• US Class Current: 361/728
• CPC Class Codes: H01L 2224/32225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/45124 Aluminium (Al) as principal constituent
• CPC Class Codes: H01L 2224/45144 Gold (Au) as principal constituent
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48137 the bodies being arranged next to each other, e.g. on a common substrate
• CPC Class Codes: H01L 2224/48227 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/48247 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/48465 the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
• CPC Class Codes: H01L 2224/48471 the other connecting portion not on the bonding area being a ball bond, i.e. wedge-to-ball, reverse stitch
• CPC Class Codes: H01L 2224/49 of a plurality of wire connectors
• CPC Class Codes: H01L 2224/73265 Layer and wire connectors
• CPC Class Codes: H01L 23/3735 Laminates or multilayers, e.g. direct bond copper ceramic substrates
• CPC Class Codes: H01L 23/49531 the additional leads being a wiring board
• CPC Class Codes: H01L 23/49575 Assemblies of semiconductor devices on lead frames
• CPC Class Codes: H01L 24/45 of an individual wire connector
• CPC Class Codes: H01L 24/48 of an individual wire connector
• CPC Class Codes: H01L 24/49 of a plurality of wire connectors
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00012 Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01006 : Carbon [C]
• CPC Class Codes: H01L 2924/01012 : Magnesium [Mg]
• CPC Class Codes: H01L 2924/01013 : Aluminum [Al]
• CPC Class Codes: H01L 2924/01014 : Silicon [Si]
• CPC Class Codes: H01L 2924/01015 : Phosphorus [P]
• CPC Class Codes: H01L 2924/01028 : Nickel [Ni]
• CPC Class Codes: H01L 2924/01029 : Copper [Cu]
• CPC Class Codes: H01L 2924/0104 : Zirconium [Zr]
• CPC Class Codes: H01L 2924/01047 : Silver [Ag]
• CPC Class Codes: H01L 2924/01068 : Erbium [Er]
• CPC Class Codes: H01L 2924/01075 : Rhenium [Re]
• CPC Class Codes: H01L 2924/01078 : Platinum [Pt]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/01082 : Lead [Pb]
• CPC Class Codes: H01L 2924/014 : Solder alloys
• CPC Class Codes: H01L 2924/12042 : LASER
• CPC Class Codes: H01L 2924/1301 : Thyristor
• CPC Class Codes: H01L 2924/13034 : Silicon Controlled Rectifier [SCR]
• CPC Class Codes: H01L 2924/1305 : Bipolar Junction Transistor [BJT]
• CPC Class Codes: H01L 2924/13055 : Insulated gate bipolar transistor [IGBT]
• CPC Class Codes: H01L 2924/1532 : the connection portion being formed on the die mounting surface of the substrate
• CPC Class Codes: H01L 2924/181 : Encapsulation
• CPC Class Codes: H01L 2924/19041 : being a capacitor
• CPC Class Codes: H01L 2924/19042 : being an inductor
• CPC Class Codes: H01L 2924/19043 : being a resistor

Abstract

A power module has a circuit carrier that, on its upper side is coated with a structured metal layer and mounted with power components. The power components are driven by flat conductors, the inner flat-conductor ends of which interact, via thermocompression heads, with contact-connection surfaces, while the outer flat-conductor ends project out of the housing of the power module. A process is described for producing the power module.

Claims

1. A power module, comprising:

an insulation plate coated with metal on both sides, functioning as a circuit carrier, having an upper side with a structured metal layer, and having power components mounted on said structured metal layer, said structured metal layer having a contact-connection surface;

a housing encasing said insulation plate;

a flat conductor having an inner flat-conductor end and an outer flat conductor end projecting outside of said housing; and

a thermocompression head electrically interconnecting said flat-conductor end and said contact-connection surface of said structured metal layer.

2. The power module according to claim 1, wherein said structured metal layer has conductor tracks connecting at least one of said power components to one another and said power components to said contact-connection surfaces.

3. The power module according to claim 2, wherein said power components have active upper sides;

and

electrodes disposed on said active upper sides are connected to at least one of said conductor tracks and said contact-connection surface of said structured metal layer via bonding connections.

4. The power module according to claim 1, wherein said insulation plate of said circuit carrier is a ceramic plate including a compound selected from the group consisting of SiO₂, A1₂O₃, Si₃N₄, ZrO₂, MgO, and SiC.

5. The power module according to claim 1, wherein said insulation plate of said circuit carrier is a glass-fiber-reinforced synthetic resin.

6. The power module according to claim 1, wherein said circuit carrier has an underside;

and

a continuous layer of metal is disposed on said underside of said circuit carrier.

7. The power module according to claim 1, wherein said metal layer of said circuit carrier includes a copper-containing metal selected from the group consisting of copper and a copper alloy.

8. The power module according to claim 1, further comprising a bondable coating disposed on said contact-connection surface and supporting said thermocompression head.

9. The power module according to claim 8, wherein said bondable coating includes at least one of a layer inhibiting copper diffusion and a noble-metal layer.

10. The power module according to claim 9, wherein said layer inhibiting copper diffusion includes a nickel-containing metal selected from the group consisting of nickel and a nickel alloy.

11. The power module according to claim 9 wherein said noble-metal layer includes a metal selected from the group consisting of gold, silver, aluminum, and alloys thereof.

12. The power module according to claim 1, wherein said contact-connection surface includes a phosphorus-doped nickel coating.

13. The power module according to claim 9, wherein said layer inhibiting copper diffusion of said contact-connection surface has a gold-containing coating having a thickness on the order of tens of nanometers, said gold-containing coating being made from a material selected from the group consisting of gold and a gold alloy.

14. The power module according to claim 1, wherein said metal on both sides of said circuit carrier has identical coatings selected from the group consisting of a copper-diffusion inhibiting layer and a noble-metal coating.

15. The power module according to claim 1, wherein said thermocompression head include a metal selected from the group consisting of gold, aluminum, copper, and alloys thereof.

16. The power module according to claim 1, wherein said flat conductors includes a copper-containing metal selected from the group consisting of copper and a copper alloy.

17. The power module according to claim 8, wherein said inner flat-conductor end has a coating selected from the group consisting of a layer inhibiting copper diffusion and a noble-metal coating, said coating having a composition corresponding to said bondable coating on said contact-connection surface.

18. The power modules according to claim 1, wherein said power components are power semiconductor chips disposed on said circuit carrier.

19. The power module according to claim 1, wherein at least one of said power components forms a control for an electric motor.

20. A process for producing a power module, which comprises the steps:

providing a circuit carrier board having contact islands, conductor tracks, and contact-connection surfaces of a structured metal layer in a plurality of module installation positions;

coating at least the contact-connection surfaces with a bondable coating;

applying thermocompression heads to the contact-connection surfaces;

dividing the circuit carrier board into individual circuit carriers for each module installation position;

providing a system carrier having a system carrier frame;

extending flat conductors with inner flat-conductor ends from the system carrier frame toward a plurality of the module installation positions;

orienting and connecting the thermocompression heads on the contact-connection surfaces of each circuit carrier to the inner flat-conductor ends of each leadframe in the module installation positions of the system carrier;

applying a plurality of power components in each module installation position;

applying bonding connections to the power components;

packaging each module installation position of the system carrier together with power components disposed on the circuit carriers in a housing; and

dividing the system carrier into individual multichip power modules.

21. The process according to claim 20, which further comprises:

laminating an insulation plate with copper on two sides;

using the insulation plate as circuit carrier;

structuring one of the copper layers to include contact islands for fixing the power semi-conductor chips, with conductor tracks (13) and contact-connection surfaces; and

retaining the opposite copper layer as a continuous metal layer.

22. The process according to claim 20, wherein the metal layer is structured by etching through an etching mask.

23. The process according to claim 22, wherein the etching is dry etching.

24. The process according to claim 22, wherein the etching is wet etching.

25. The process according to claim 20, wherein the metal layer is structured by laser ablation.

26. The process according to claim 20, wherein the bondable coating is formed by

first applying a layer inhibiting copper diffusion;

and

then applying a metal layer selected from the group consisting of gold, silver, and an alloy thereof, by electrolytic deposition.

27. The process according to claim 26, wherein the applying a layer inhibiting copper diffusion includes stencil printing a layer of phosphorus-doped nickel.

28. The process according to claim 20, which further comprises applying the thermocompression heads to at least one of the inner flat-conductor ends and the coated contact-connection surfaces by a bonding method selected from the group consisting of thermocompression bonding and thermocompression sonic bonding.

29. The process according to claim 20, which further comprises soldering the power semiconductor chips to the contact islands of the circuit carrier in each module installation position of the system carrier to electrically connect and mechanically fix the power semiconductor chips to the contact islands.

30. The process according to claim 20, which further comprises mechanically fixing by adhesively bonding the power semiconductor chips to the contact islands of the circuit carrier in each module installation position of the system carrier.

31. The process according to claim 20, which further comprises mechanically fixing by conductively and adhesively bonding the power semiconductor chips to the contact islands of the circuit carrier in each module installation position of the system carrier.

32. The process according to claim 20, which further comprises electrically connecting the electrodes on the active upper sides of the power semiconductor chip to at least one of one another and the conductor tracks of the structured metal layer, via bonding connections.

33. The process according to claim 20, wherein the packaging step of each module installation position in a housing includes high-pressure injection molding to form a plastic housing.

34. The process according to claim 20, wherein the dividing of the system carrier into individual multichip power modules includes stamping the system carrier.

35. A process for producing a power module, which comprises the following process steps:

providing a circuit carrier board having a plurality of module installation positions including contact islands, conductor tracks, and contact-connection surfaces of a structured metal layer;

selectively coating the contact-connection surfaces with a bondable coating;

mounting a plurality of power components on the circuit carrier board in each module installation position;

applying bonding connections in each module installation position;

applying thermocompression heads to the contact-connection surfaces;

dividing the circuit carrier board into individual circuit carriers for each module installation position;

providing a system carrier having a system carrier frame;

extending flat conductors with inner flat-conductor ends toward a plurality of the module installation positions;

orienting and connecting the thermocompression heads on the contact-connection surfaces of each circuit carrier to the inner flat-conductor ends of each leadframe in the module installation positions of the system carrier;

packaging each module installation position of the system carrier together with power components disposed on circuit carriers in a housing; and

dividing the system carrier into individual multichip power modules.

36. The process according to claim 35, which further comprises:

laminating an insulation plate with copper on two sides;

using the insulation plate as circuit carrier;

structuring one of the copper layers with contact islands for fixing the power semi-conductor chips, with conductor tracks and contact-connection surfaces; and

retaining the opposite copper layer as a continuous metal layer.

37. The process according to claim 35, wherein the metal layer is structured by etching through an etching mask.

38. The process according to claim 37, wherein the etching is dry etching.

39. The process according to claim 37, wherein the etching is wet etching.

40. The process according to claim 35, wherein the metal layer is structured by laser ablation.

41. The process according to claim 35, wherein the bondable coating is formed by

first applying a layer inhibiting copper diffusion;

and

then applying a metal layer selected from the group consisting of gold, silver, and an alloy thereof, by electrolytic deposition.

42. The process according to claim 41, wherein the applying a layer inhibiting copper diffusion includes stencil printing a layer of phosphorus-doped nickel.

43. The process according to claim 35, which further comprises applying the thermocompression heads to at least one of the inner flat-conductor ends and the coated contact-connection surfaces by a bonding method selected from the group consisting of thermocompression bonding and thermocompression sonic bonding.

44. The process according to claim 35, which further comprises soldering the power semiconductor chips to the contact islands of the circuit carrier in each module installation position of the system carrier to electrically connect and mechanically fix the power semiconductor chips to the contact islands.

45. The process according to claim 35, which further comprises mechanically fixing by adhesively bonding the power semiconductor chips to the contact islands of the circuit carrier in each module installation position of the system carrier.

46. The process according to claim 35, which further comprises mechanically fixing by conductively and adhesively bonding the power semiconductor chips to the contact islands of the circuit carrier in each module installation position of the system carrier.

47. The process according to claim 35, which further comprises electrically connecting the electrodes on the active upper sides of the power semiconductor chip to at least one of one another and the conductor tracks of the structured metal layer, via bonding connections.

48. The process according to claim 35, wherein the packaging step of each module installation position in a housing includes high-pressure injection molding to form a plastic housing.

49. The process according to claim 35, wherein the dividing of the system carrier into individual multichip power modules includes stamping the system carrier.