Processing methods for providing metal-comprising materials within high aspect ratio openings

• US 20030113994A1
• Filed: 02/05/2003
• Published: 06/19/2003
• Est. Priority Date: 11/13/1998
• Status: Active Grant

• Current Assignee: John H. Givens
• Original Assignee: John H. Givens
• Inventors: Givens, John H.
• Granted Patent: US 6,790,764 B2
• Time in Patent Office: Days
• US Class Current: 438/637
• CPC Class Codes: H01L 21/76882 Reflowing or applying of pressure to better fill the contact hole
• CPC Class Codes: Y10T 428/12681 Ga-, In-, Tl- or Group VA metal-base component
• CPC Class Codes: Y10T 428/12736 Al-base component
• CPC Class Codes: Y10T 428/1275 Next to Group VIII or IB metal-base component
• CPC Class Codes: Y10T 428/12903 Cu-base component
• CPC Class Codes: Y10T 428/12993 Surface feature [e.g., rough, mirror]

Abstract

In one aspect, the invention includes a processing method, comprising: a) providing a substrate having a high aspect ratio opening therein; b) forming a metal-comprising layer over the opening; c) providing a first pressure against the metal-comprising layer; and d) ramping the pressure that is against the metal-comprising layer to a second pressure at a rate of from about 1 atmosphere per second about 100 atmospheres per second. In another aspect, the invention includes a processing method, comprising: a) providing a substrate having a high aspect ratio opening therein, the opening having a widest portion and a width at said widest portion; b) in a first chamber, sputter depositing a metal to form a metal-comprising layer over the opening, the metal-comprising layer having a thickness that is at least about twice the width of the opening; c) transferring the substrate to a second chamber having a first pressure therein; and d) while the substrate is within the second chamber, ramping the pressure within the second chamber at a rate of at least about 20 atmospheres per second to a second pressure.

Claims

1. A processing method, comprising:

providing a substrate having a high aspect ratio opening therein;

forming a metal-comprising layer over the opening;

providing a first pressure against the metal-comprising layer; and

ramping the pressure that is against the metal-comprising layer to a second pressure at a rate of from about 1 atmosphere per second to about 100 atmospheres per second.

2. The method of claim 1 wherein metal-comprising layer comprises one or more of aluminum, copper and silver.

3. The method of claim 1 wherein metal-comprising layer comprises elemental aluminum.

4. The method of claim 1 wherein metal-comprising layer comprises an aluminum alloy.

5. The method of claim 1 wherein the substrate comprises an electrically insulative material.

6. The method of claim 1 wherein the ramp rate is greater than 10 atmospheres/second.

7. The method of claim 1 further comprising maintaining the second pressure for a sufficient period of time to force the metal-comprising layer into the opening.

8. A processing method, comprising:

providing a substrate having an opening therein, the opening having a width with a critical dimension of greater than or equal to about 0.35 microns and having a depth of less than or equal to about 2.4 microns;

forming a metal-comprising layer over the opening, the metal-comprising layer having a thickness that is at least about twice the critical dimension of the opening width;

providing a first pressure against the metal-comprising layer; and

ramping the pressure that is against the metal-comprising layer at a rate of at least about 20 atmospheres per second to a second pressure.

9. The method of claim 8 wherein the opening has an aspect ratio of at least 6:

1.

10. The method of claim 8 further comprising forcing the metal-comprising layer into the opening to fill the opening, the metal-comprising layer filling the opening within a time of less than 2 seconds after initiating the ramping.

11. The method of claim 8 further comprising forcing the metal-comprising layer into the opening to fill the opening, the metal-comprising layer filling the opening within a time of less than 1 second after initiating the ramping.

12. The method of claim 8 wherein the first pressure is about 1 atmosphere and the second pressure is at least about 600 atmospheres.

13. The method of claim 8 wherein the first pressure is about 1 atmosphere and the second pressure is from about 600 atmospheres to about 1000 atmospheres.

14. The method of claim 8 further comprising maintaining the second pressure for a time of at least about 1 second.

15. The method of claim 8 further comprising maintaining the second pressure for a time of from about 1 second to about 120 seconds.

16. A processing method, comprising:

providing a substrate having an opening therein, the opening having a width with a critical dimension greater than or equal to about 0.35 microns and having depth of less than or equal to about 4 microns;

forming a metal-comprising layer over the opening, the metal-comprising layer, having a thickness that is at least about twice the critical dimension of the opening width;

providing a first pressure against the metal-comprising layer; and

ramping the pressure that is against the metal-comprising layer at a rate of greater than or equal to about 35 atmospheres per second to a second pressure.

17. The method of claim 16 wherein the opening has an aspect ratio of at least 6:

1.

18. The method of claim 16 further comprising forcing the metal-comprising layer into the opening to fill the opening, the metal-comprising layer filling the opening within a time of less than 2 seconds after initiating the ramping.

19. The method of claim 16 further comprising forcing the metal-comprising layer into the opening to fill the opening, the metal-comprising layer filling the opening within a time of less than 1 second after initiating the ramping.

20. The method of claim 16 further comprising maintaining the second pressure for a time of at least about 1 second.

21. The method of claim 16 further comprising maintaining the second pressure for a time of from about 1 second to about 120 seconds.

22. A processing method, comprising:

providing a substrate having an opening therein, the opening having a width with a critical dimension of greater than or equal to about 0.25 microns and having a depth of less than or equal to about 3 microns;

forming a metal-comprising layer over the opening, the metal-comprising layer having a thickness that is at least about twice the critical dimension of the opening width;

providing a first pressure against the metal-comprising layer; and

ramping the pressure that is against the metal-comprising layer at a rate of greater than about 35 atmospheres per second to a second pressure.

23. The method of claim 22 wherein the opening has an aspect ratio of at least 6:

1.

24. The method of claim 22 further comprising forcing the metal-comprising layer into the opening to fill the opening, the metal-comprising layer filling the opening within a time of less than 2 seconds after initiating the ramping.

25. The method of claim 22 further comprising forcing the metal-comprising layer into the opening to fill the opening, the metal-comprising layer filling the opening within a time of less than 1 second after initiating the ramping.

26. The method of claim 22 further comprising maintaining the second pressure for a time of at least about 1 second.

27. The method of claim 22 further comprising maintaining the second pressure for a time of from about 1 second to about 120 seconds.

28. A processing method, comprising:

providing a substrate having an opening therein, the opening having a width with a critical dimension of greater than or equal to about 0.15 microns and having a depth of less than or equal to about 2 microns;

forming a metal-comprising layer over the opening the metal-comprising layer having a thickness that is at least about twice the critical dimension of the opening width;

providing a first pressure against the metal-comprising layer; and

ramping the pressure that is against the metal-comprising layer at a rate of at least about 35 atmospheres per second to a second pressure.

29. The method of claim 28 wherein the opening has an aspect ratio of at least 6:

1.

30. The method of claim 28 further comprising forcing the metal-comprising layer into the opening to fill the opening, the metal-comprising layer filling the opening within a time of less than 2 seconds after initiating the ramping.

31. The method of claim 28 further comprising forcing the metal-comprising layer into the opening to fill the opening, the metal-comprising layer filling the opening within a time of less than 1 second after initiating the ramping.

32. The method of claim 28 further comprising maintaining the second pressure for a time of at least about 1 second.

33. The method of claim 28 further comprising maintaining the second pressure for a time of from about 1 second to about 120 seconds.

34. A processing method, comprising:

providing a substrate having an opening therein, the opening having a width with a critical dimension of greater than or equal to about 0.1 microns and having a depth of less than or equal to about 1 micron;

forming a metal-comprising layer over the opening, the metal-comprising layer having a thickness that is at least about twice the critical dimension of the opening width;

providing a first pressure against the metal-comprising layer; and

ramping the pressure that is against the metal-comprising layer at a rate of at least about 35 atmospheres per second to a second pressure.

35. The method of claim 34 wherein the opening has an aspect ratio of at least 6:

1.

36. The method of claim 34 further comprising forcing the metal-comprising layer into the opening to fill the opening, the metal-comprising layer filling the opening within a time of less than 2 second after initiating the ramping.

37. The method of claim 34 further comprising forcing the metal-comprising layer into the opening to fill the opening, the metal-comprising layer filling the opening within a time of less than 1 second after initiating the ramping.

38. The method of claim 34 further comprising maintaining the second pressure for a time of at least about 1 second.

39. The method of claim 34 further comprising maintaining the second pressure for a time of from about 1 second to about 120 seconds.

40. A processing method, comprising:

providing a substrate having a high aspect ratio opening therein, the opening having a widest portion and a width at said widest portion;

in a first chamber, sputter depositing a metal to form a metal-comprising layer over the opening, the metal-comprising layer having a thickness that is at least about twice the width at the widest portion of the opening;

transferring the substrate to a second chamber having a first pressure therein; and

while the substrate is within the second chamber, ramping the pressure within the second chamber at a rate of at least about 20 atmospheres per second to a second pressure.

41. The method of claim 40 wherein metal-comprising layer comprises elemental aluminum.

42. The method of claim 40 wherein metal-comprising layer comprises an aluminum alloy.

43. The method of claim 40 wherein the first pressure is about 1 atmosphere and the second pressure is at least about 600 atmospheres.

44. The method of claim 40 wherein the first pressure is about 1 atmosphere and the second pressure is from about 600 atmospheres to about 1000 atmospheres.

45. The method of claim 40 further comprising maintaining the second pressure for a time of at least about 1 second.

46. The method of claim 40 further comprising maintaining the second pressure for a time of from about 1 second to about 120 seconds.

47. The method of claim 40 wherein the first pressure is about 1 atmosphere and the second pressure is at least about 600 atmospheres and further comprising maintaining the second pressure for a time of at least about 1 second.

48. The method of claim 40 wherein the ramp rate is at least about 35 atmospheres per second.

49. The method of claim 40 wherein the ramp rate is at least about 100 atmospheres per second.