Semiconductor and non-semiconductor non-diffusion-governed bioelectrodes

• US 20030114904A1
• Filed: 09/30/2002
• Published: 06/19/2003
• Est. Priority Date: 10/11/2001
• Status: Active Grant

• Current Assignee: Jeanne E. Pemberton, Marc Ovadia
• Original Assignee: Jeanne E. Pemberton, Marc Ovadia
• Inventors: Ovadia, Marc, Pemberton, Jeanne E.
• Granted Patent: US 6,949,763 B2
• Time in Patent Office: Days
• US Class Current: 607/116
• CPC Class Codes: A61N 1/05 for implantation or insertion into the body, e.g. heart electrode A61N1/06 takes precedence
• CPC Class Codes: B82Y 30/00 Nanotechnology for materials or surface science, e.g. nanocomposites

Abstract

An implantable electrode and electrode system for contacting living biological material that includes an electrode assembly including at least a portion of the electrode, adapted to contact the living biological material at an electrode/tissue interface, exhibiting conduction that is substantially limited to electron or electron vacancy conduction. The implantable electrode is manufactured by coupling an electrode to a distal end of a conductor, and forming at least one surface of the electrode with a material that conducts electricity in a manner that is substantially limited to electron or electron vacancy conduction when the at least one surface is in contact with the living matter

Claims

1. An implantable electrode system for contacting living biological material, comprising:

an electrode assembly including at least a first portion adapted to contact the living biological material at an electrode/tissue interface, the first portion of the electrode assembly exhibiting conduction that is substantially limited to electron or electron vacancy conduction.

2. The electrode system of claim 1, wherein the first portion is formed of a material exhibiting semiconductor properties.

3. The electrode system of claim 2, wherein the first portion is formed of a material selected from the group consisting of polythiophene, derivatized polythiophene, and conjugated polymer classes.

4. The electrode system of claim 2, wherein the first portion includes a material doped to form a p-type semiconductor.

5. The electrode system of claim 4, wherein the first portion includes a gold portion having at least one surface in proximity to the doped material.

6. The electrode system of claim 2, wherein the doped material is doped via electrochemical polymerization to form a p-type semiconductor.

7. The electrode system of claim 6, wherein the electrochemical polymerization includes performing anodic potentiostatic pulsation using a mixture of 3,4-ethlenedioxythiophene and counter ions.

8. The electrode system of claim 1, wherein the first portion is formed of a layer of non-conductive material.

9. The electrode system of claim 8, wherein the layer of non-conductive material is a self-assembled monolayer (SAM) of any organic species that possesses a thiol functionality.

10. The electrode system of claim 9, wherein the layer of non-conductive material is a self-assembled monolayer (SAM) of n-alkylthiol.

11. The electrode system of claim 2 or claim 8, wherein the electrode assembly is a microelectrode or ultra-microelectrode assembly.

12. An implantable electrode, comprising:

a conductor; and

an electrode assembly coupled to the conductor, the electrode assembly have at least one portion adapted to contact living biological material and that demonstrates semiconductor properties when in contact with the living biological material.

13. The electrode of claim 12, wherein the at least one portion performs conduction solely via electrode or hole conduction with in contact with the living biological material.

14. The electrode of claim 13, wherein the at least one portion is formed of a material selected from the group consisting of polythiophene, derivatized polythiophene, and conjugated polymer classes.

15. The electrode of claim 13, wherein the at least one portion includes a doped material doped to form a p-type semiconductor.

16. The electrode of claim 15, wherein the first portion includes a gold portion having at least one surface in proximity to the doped material.

17. The electrode of claim 16, wherein the doped material is doped via electrochemical polymerization to form a p-type semiconductor.

18. The electrode of claim 17, wherein the electrochemical polymerization includes performing anodic potentiostatic pulsation using a mixture of 3,4-ethlenedioxythiophene and counter ions.

19. A method of manufacturing an implantable electrode adapted to contact living matter, comprising the steps:

coupling an electrode to a distal end of a conductor; and

forming at least one surface of the electrode with a material that conducts electricity in a manner that is substantially limited to one of electron and electron vacancy conduction when the at least one surface is in contact with the living matter.

20. A method of manufacturing an implantable electrode adapted to contact living matter, comprising the steps:

coupling an electrode to a distal end of a conductor; and

configuring the electrode so that the electrode conducts electricity in a manner that is substantially limited to electron or electron vacancy conduction when the electrode is in contact with the living matter.