Apparatus and method for direct current plasma immersion ion implantation
First Claim
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1. Apparatus for direct current plasma ion implantation, comprising:
- (a) a vacuum chamber, (b) an ion/plasma source (c) means for supporting a target in said chamber, (d) means for applying an electrical potential to said target supporting means, and (e) a conducting grid being located between said target supporting means and said ion/plasma source dividing said chamber into two parts.
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Abstract
An apparatus and method are disclosed for a low-pressure steady-state direct current or long-pulse mode of plasma immersion ion implantation. A conducting grid is located between the wafer stage and the supply of plasma. The supply of plasma may be controlled through a variable aperture in which is provided the conducting grid.
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Citations
18 Claims
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1. Apparatus for direct current plasma ion implantation, comprising:
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(a) a vacuum chamber, (b) an ion/plasma source (c) means for supporting a target in said chamber, (d) means for applying an electrical potential to said target supporting means, and (e) a conducting grid being located between said target supporting means and said ion/plasma source dividing said chamber into two parts. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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13. A method of plasma immersion ion implantation, comprising:
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(a) providing on a supporting means within a vacuum chamber a target to be implanted, (b) providing an ion/plasma source to said chamber, (c) providing a conducting grid extending across said chamber and being located between said target and said ion/plasma source, (d) maintaining a low pressure plasma in a space defined between said source and said grid, and (e) maintaining said target supporting means at an electrical potential negative relative to said grid. - View Dependent Claims (14, 15, 16, 17, 18)
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Specification