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Apparatus and method for direct current plasma immersion ion implantation

  • US 20030116090A1
  • Filed: 02/13/2003
  • Published: 06/26/2003
  • Est. Priority Date: 03/23/2000
  • Status: Abandoned Application
First Claim
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1. Apparatus for direct current plasma ion implantation, comprising:

  • (a) a vacuum chamber, (b) an ion/plasma source (c) means for supporting a target in said chamber, (d) means for applying an electrical potential to said target supporting means, and (e) a conducting grid being located between said target supporting means and said ion/plasma source dividing said chamber into two parts.

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