Self-ionized and inductively-coupled plasma for sputtering and resputtering

• US 20030116427A1
• Filed: 07/25/2002
• Published: 06/26/2003
• Est. Priority Date: 08/30/2001
• Status: Abandoned Application

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: Smith, Paul F., Ding, Peijun, Xu, Zheng, Fu, Jianming, Forster, John C., Tang, Xianmin, Maity, Nirmalya, Rengarajan, Suraj, Mosely, Roderick C., Gopalraja, Praburam, Chen, Fusen, Chin, Barry, Carl, Daniel A., Angelo, Darryl, Tolia, Anish
• Application Number:
  US10/202,778
• Publication Number:
  US 20030116427A1
• Time in Patent Office: Days
• US Class Current: 204/192.17
• CPC Class Codes: C23C 14/046 Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
• CPC Class Codes: C23C 14/345 using substrate bias
• CPC Class Codes: C23C 14/3457 using other particles than noble gas ions C23C14/0036, C23C14/46 take precedence
• CPC Class Codes: C23C 14/358 Inductive energy
• CPC Class Codes: H01J 2237/3327 Coating high aspect ratio workpieces
• CPC Class Codes: H01J 37/321 the radio frequency energy being inductively coupled to the plasma
• CPC Class Codes: H01J 37/3408 Planar magnetron sputtering
• CPC Class Codes: H01L 21/2855 by physical means, e.g. sputtering, evaporation H01L21/28518 - H01L21/28537 and H01L21/28568 take precedence
• CPC Class Codes: H01L 21/76805 the opening being a via or contact hole penetrating the underlying conductor
• CPC Class Codes: H01L 21/76844 Bottomless liners
• CPC Class Codes: H01L 21/76846 Layer combinations
• CPC Class Codes: H01L 21/76862 Bombardment with particles, e.g. treatment in noble gas plasmas; UV irradiation
• CPC Class Codes: H01L 21/76864 Thermal treatment
• CPC Class Codes: H01L 21/76865 Selective removal of parts of the layer H01L21/76844 takes precedence
• CPC Class Codes: H01L 21/76868 Forming or treating discontinuous thin films, e.g. repair, enhancement or reinforcement of discontinuous thin films
• CPC Class Codes: H01L 21/76873 for electroplating
• CPC Class Codes: H01L 21/76877 Filling of holes, grooves or trenches, e.g. vias, with conductive material
• CPC Class Codes: H01L 2221/1089 Stacks of seed layers

Abstract

A magnetron sputter reactor for sputtering deposition materials such as tantalum, tantalum nitride and copper, for example, and its method of use, in which self-ionized plasma (SIP) sputtering and inductively coupled plasma (ICP) sputtering are promoted, either together or alternately, in the same chamber. Also, bottom coverage may be thinned or eliminated by ICP resputtering. SIP is promoted by a small magnetron having poles of unequal magnetic strength and a high power applied to the target during sputtering. ICP is provided by one or more RF coils which inductively couple RF energy into a plasma. The combined SIP-ICP layers can act as a liner or barrier or seed or nucleation layer for hole. In addition, an RF coil may be sputtered to provide protective material during ICP resputtering.

Claims

1. A method of sputter depositing deposition material onto a substrate in a chamber having a target, comprising:

rotating a magnetron about the back of the target, said magnetron having an area of no more than ¼

of the area of the target and including an inner magnetic pole of one magnetic polarity surrounded by an outer magnetic pole of an opposite magnetic polarity, a magnetic flux of said outer pole being at least 50% larger than the magnetic flux of said inner pole to generate a self-ionized plasma adjacent said target;

applying power to said target to thereby sputter material from said target onto said substrate wherein at least a portion of the sputtered material is ionized in said self-ionized plasma; and

applying RF power to a coil to inductively couple RF energy to generate an inductively coupled plasma adjacent said substrate.

2. The method of claim 1 further comprising biasing said substrate sufficiently to attract ionized deposition material into holes in said substrate having a height to width aspect ratio of at least 4:

1.

3. The method of claim 1 further comprising biasing said substrate sufficiently to resputter deposition material from said substrate using ions generated in said inductively coupled plasma.

4. The method of claim 3 further comprising supplying a precursor gas into said chamber wherein said precursor gas is ionized in said inductively coupled plasma to generate said ions used to resputter deposition material from said substrate.

5. The method of claim 1 further comprising ionizing additional sputtered deposition material using said inductively coupled plasma.

6. The method of claim 1 further comprising sputtering material from said coil onto said substrate using said inductively coupled plasma.

7. The method of claim 1 further comprising controlling the DC bias on said coil using a DC source coupled to said coil to control the rate at which coil material is sputtered from said coil.

8. The method of claim 7 wherein said controlling includes using a blocking capacitor coupled to said coil to support a DC bias on said coil.

9. The method of claim 1 further comprising in a first step, biasing said substrate sufficiently to attract ionized deposition material into holes in said substrate having a height to width aspect ratio of at least 3:

1 to form a layer of deposition material in said hole wherein said layer has a bottom portion and a sidewall portion, and, in a second step, biasing said substrate sufficiently to resputter deposition material from the bottom portion of said hole using ions generated in said inductively coupled plasma to at least thin said bottom portion while at least reducing the power applied to said target to reduce the amount of material sputtered from said target during said second step.

10. The method of claim 9 wherein said power applied to said target is reduced to less than 1 kW during at least a portion of said second step.

11. The method of claim 9 wherein said power applied to said target is reduced to less than 200 watts during at least a portion of said second step.

12. The method of claim 9 wherein said RF power applied to said coil is less than 500 watts during at least a portion of said first step and is greater than 500 watts during at least a portion of said second step.

13. The method of claim 12 wherein said RF power applied to said coil is 0 watts during at least a portion of said first step and is at least 1 kW during at least a portion of said second step.

14. The method of claim 9 further comprising sputtering coil material from said coil onto said sidewall portion of said layer while resputtering deposition material from said layer bottom portion using said inductively coupled plasma during said second step.

15. The method of claim 14 wherein said coil sputtering includes applying DC power to said coil during at least a portion of said second step.

16. The method of claim 14 wherein said layer is a barrier layer.

17. The method of claim 16 wherein said barrier layer comprises tantalum nitride.

18. The method of claim 14 wherein said layer is a liner layer.

19. The method of claim 18 wherein said liner layer comprises tantalum.

20. The method of claim 1 wherein the pressure within said chamber is less than 5 mTorr when applying RF power to said coil.

21. The method of claim 1 wherein said target is spaced from a pedestal for holding said substrate by a throw distance that is greater than 50% of a diameter of the substrate.

22. The method of claim 21 wherein said throw distance is greater than 80% of said diameter of the substrate.

23. The method of claim 22, wherein said throw distance is greater than 140% of said diameter of the substrate.

24. The method of claim 1, wherein said material is copper which is deposited into a hole formed in a dielectric layer of said substrate and having a height to width aspect ratio of at least 4:

1.

25. A method of depositing material into holes each having an aspect ratio of at least 4:

1 and formed in a dielectric layer of a substrate, comprising;

sputtering a target of a chamber using a magnetron which generates a self-ionized plasma which ionizes the material sputtered from the target;

depositing sputtered material ionized in the self-ionized plasma into said holes of a substrate in said chamber; and

generating an inductively coupled plasma in said chamber using an RF coil to further process said substrate.

26. The method of claim 25 wherein said depositing includes biasing said substrate sufficiently to attract ionized deposition material into said holes in said substrate.

27. The method of claim 25 further comprising biasing said substrate sufficiently to resputter deposition material from said holes in said substrate using ions generated in said inductively coupled plasma.

28. The method of claim 27 further comprising supplying a precursor gas into said chamber wherein said precursor gas is ionized in said inductively coupled plasma to generate said ions used to resputter deposition material from said substrate.

29. The method of claim 25 further comprising ionizing additional sputtered deposition material using said inductively coupled plasma.

30. The method of claim 25 further comprising sputtering material from said coil onto said substrate using said inductively coupled plasma.

31. The method of claim 30 further comprising controlling the DC bias on said coil using a DC source coupled to said coil to control the rate at which coil material is sputtered from said coil.

32. The method of claim 31 wherein said controlling includes using a blocking capacitor coupled to said coil to support a DC bias on said coil.

33. The method of claim 25 wherein said depositing includes biasing said substrate sufficiently to attract ionized deposition material into said holes in said substrate to form a layer of deposition material in said hole wherein said layer has a bottom portion and a sidewall portion, and, in a second step, biasing said substrate sufficiently to resputter deposition material from the bottom portion of said hole using ions generated in said inductively coupled plasma, to at least thin said bottom portion while at least reducing the power applied to said target to reduce the amount of material sputtered from said target during said second step.

34. A method of sputter depositing deposition material onto a substrate, comprising:

providing a chamber having a target;

rotating a magnetron about the back of the target, said magnetron having an area of no more than about ¼

of the area of the target and including an inner magnetic pole of one magnetic polarity surrounded by an outer magnetic pole of an opposite magnetic polarity, a magnetic flux of said outer pole being at least 50% larger than the magnetic flux of said inner pole;

applying power to said target to thereby sputter material from said target onto said substrate at a first rate; and

applying RF power to a first coil to provide a plasma to resputter deposition material on said substrate in said chamber.

35. The method of claim 34 wherein said target is spaced from a pedestal for holding said substrate by a throw distance that is greater than 50% of a diameter of the substrate.

36. The method of claim 34 further comprising sputtering said coil to deposit coil material onto said substrate while resputtering target material on said substrate.

37. The method of claim 36 further comprising inhibiting sputtering said target while resputtering target material on said substrate.

38. A method of depositing material into holes each having an aspect ratio of at least 4:

1 and formed in a dielectric layer of a substrate, comprising;

ionizing sputtered target material in a magnetron generated self-ionized plasma in a chamber;

depositing sputtered material ionized in the self-ionized plasma into said holes of a substrate in said chamber; and

resputtering material from a portion a bottom of each of said holes in an inductively coupled plasma in said chamber.

39. The method of claim 38 further comprising sputter depositing RF coil material around said holes in said inductively coupled plasma in said chamber.

40. A method of forming a barrier layer and a liner layer into holes formed in a dielectric layer of a substrate, comprising:

operating a magnetron to generate a self-ionized plasma adjacent a target in a chamber;

sputtering said target to provide sputtered target material wherein at least a portion of said sputtered target material is ionized in said self-ionized plasma;

biasing said substrate in said chamber to deposit into each of said holes a barrier layer comprising sputtered target material ionized in said magnetron generated self-ionized plasma in said chamber;

operating an RF coil to generate an inductively coupled plasma in said chamber;

sputtering coil material from said RF coil onto said substrate in said chamber;

resputtering bottom portions of said barrier layers using said inductively coupled plasma in said chamber to thin said bottom portions of said barrier layers;

operating said magnetron to generate additional self-ionized plasma adjacent said target in said chamber;

sputtering said target to provide additional sputtered target material wherein at least a portion of said additional sputtered target material is ionized in said additional self-ionized plasma;

biasing said substrate in said chamber to deposit into each of said holes a liner layer comprising said additional sputtered target material ionized in said additional magnetron generated self-ionized plasma in said chamber;

operating said RF coil to generate additional inductively coupled plasma in said chamber;

sputtering additional coil material from said RF coil onto said substrate in said chamber; and

resputtering bottom portions of said liner layers using said additional inductively coupled plasma in said chamber to thin said bottom portions of said liner layers.

41. A plasma sputter reactor for sputter depositing a film on a substrate, comprising:

a vacuum chamber containing a pedestal aligned to a chamber axis and having a support surface for supporting a substrate to be sputter deposited;

a target comprising a material to be sputter deposited on said substrate and electrically isolated from said vacuum chamber;

a magnetron disposed adjacent said target and having an area of no more than about ¼

of the area of the target and including an inner magnetic pole of one magnetic polarity surrounded by an outer magnetic pole of an opposite magnetic polarity, a magnetic flux of said outer pole being at least 50% larger than the magnetic flux of said inner pole, and adapted to generate a self-ionized plasma in said chamber adjacent said target to ionize deposition material sputtered from said target; and

a first RF coil disposed between said target and said pedestal and adapted to inductively couple RF energy to generate an inductively coupled plasma in a plasma generation area between said target and pedestal.

42. The reactor of claim 41 further comprising a first electrically conductive shield generally symmetric about said axis, and disposed within said chamber wherein said coil is generally symmetric about said axis and is insulatively supported by said shield.

43. The reactor of claim 41 further comprising a pressure pump coupled to said chamber and a controller adapted to control the pressure pump and the pressure in said chamber to a pressure of no more than 5 millitorr during at least a first portion of said sputter depositing.

44. The reactor of claim 41 further comprising a source coupled to said coil and a controller adapted to control said source to bias said substrate sufficiently to attract ionized deposition material into holes in said substrate having a height to width aspect ratio of at least 4:

1.

45. The reactor of claim 44 wherein said controller is adapted to control said source to bias said substrate sufficiently to resputter deposition material from said substrate using ions generated in said inductively coupled plasma.

46. The reactor of claim 45 further comprising a precursor gas supply wherein said controller is adapted to control said supply to supply a precursor gas into said chamber wherein said precursor gas is ionized in said inductively coupled plasma to generate said ions used to resputter deposition material from said substrate.

47. The reactor of claim 41 wherein said coil is adapted to be sputtered, said reactor further comprising a DC source coupled to said coil and a controller adapted to control said DC source to control the DC bias on said coil to control the rate at which coil material is sputtered from said coil.

48. The reactor of claim 47 further comprising a blocking capacitor coupled to said coil to support a DC bias on said coil.

49. The reactor of claim 41 further comprising a biasing source coupled to said pedestal and a controller adapted to control said biasing source, in a first step, to bias said substrate sufficiently to attract ionized deposition material into holes in said substrate having a height to width aspect ratio of at least 3:

1 to form a layer of deposition material in each of said holes wherein said layer has a bottom portion and a sidewall portion, and, in a second step, to bias said substrate sufficiently to resputter deposition material from the bottom portion of said layers using ions generated in said inductively coupled plasma to at least thin said bottom portions while at least reducing the power applied to said target to reduce the amount of material sputtered from said target during said second step.

50. The reactor of claim 49 further comprising a power source adapted to apply power to said target wherein said controller is adapted to control the target power source to reduce the power applied to said target to less than 1 kW during at least a portion of said second step.

51. The reactor of claim 49 wherein said power applied to said target is reduced to less than 200 watts during at least a portion of said second step.

52. The reactor of claim 51 wherein said no material is sputtered from said target during at least a portion of said second step.

53. The reactor of claim 49 further comprising an RF power source adapted to apply RF power said coil wherein said controller is adapted to control the coil RF power source to apply RF power to said coil at less than 500 watts during at least a portion of said first step and at greater than 500 watts during at least a portion of said second step.

54. The reactor of claim 53 wherein said RF power applied to said coil is 0 watts during at least a portion of said first step and is at least 1 kW during at least a portion of said second step.

55. The reactor of claim 49 further comprising a DC power source adapted to apply DC power to said coil wherein said controller is adapted to control the coil DC power source to apply DC power to said coil to control coil sputtering during at least a portion of said second step.

56. The reactor of claim 55 wherein said controller is adapted to control said coil DC power source to sputter coil material from said coil onto said sidewall portion of said layers while resputtering deposition material from said layer bottom portions using said inductively coupled plasma during said second step

57. The reactor of claim 41 wherein said target material comprises tantalum.

58. The reactor of claim 47 wherein said coil material comprises tantalum.

59. The reactor of claim 41 wherein said target is spaced from said pedestal by a throw distance that is greater than 50% of a diameter of the substrate.

60. The reactor of claim 59 wherein said throw distance is greater than 80% of said diameter of the substrate.

61. The reactor of claim 60, wherein said throw distance is greater than 140% of said diameter of the substrate.

138. The reactor of claim 46, wherein said substrate is a 200 mm wafer, said pressure is less than 1 milliTorr, said target is spaced from a pedestal for holding said substrate by a throw distance that is greater than 140% of said substrate diameter.

62. A plasma sputter reactor for sputter depositing a film on a substrate, comprising:

a vacuum chamber containing a pedestal aligned to a chamber axis and having a support surface for supporting a substrate to be sputter deposited;

a target comprising a material to be sputter deposited on said substrate and electrically isolated from said vacuum chamber;

a magnetron disposed adjacent said target and having an area of no more than about ¼

of the area of the target and including an inner magnetic pole of one magnetic polarity surrounded by an outer magnetic pole of an opposite magnetic polarity, a magnetic flux of said outer pole being at least 50% larger than the magnetic flux of said inner pole, and adapted to generate a self-ionized plasma in said chamber adjacent said target to ionize deposition material sputtered from said target; and

a first RF coil disposed between said target and said pedestal and adapted to inductively couple RF energy to generate an inductively coupled plasma in a plasma generation area between said target and pedestal to resputter target deposition material from said substrate.

63. The reactor of claim 62 wherein said coil is adapted to be sputtered, said reactor further comprising a DC source coupled to said coil and a controller adapted to control said DC source to control the DC bias on said coil to control the rate at which coil material is sputtered from said coil.

64. The reactor of claim 63 further comprising a blocking capacitor coupled to said coil to support a DC bias on said coil.

65. A plasma sputter reactor for sputter depositing a film on a substrate having a plurality of holes, comprising:

a vacuum chamber containing a pedestal aligned to a chamber axis and having a support surface for supporting a substrate to be sputter deposited;

a controller;

a pedestal power source responsive to said controller and coupled to said pedestal and adapted to bias said substrate supported on said pedestal support surface;

a target comprising a material to be sputter deposited on said substrate and electrically isolated from said vacuum chamber wherein said target is spaced from said pedestal by a throw distance that is greater than 50% of a diameter of the substrate;

a magnetron responsive to said controller and disposed adjacent said target and having an area of no more than about ¼

of the area of the target and including an inner magnetic pole of one magnetic polarity surrounded by an outer magnetic pole of an opposite magnetic polarity, a magnetic flux of said outer pole being at least 50% larger than the magnetic flux of said inner pole, and adapted to generate a self-ionized plasma in said chamber adjacent said target to ionize deposition material sputtered from said target;

a target power source coupled to said target and responsive to said controller to bias said target to cause target material to be sputtered from said target;

a first electrically conductive shield generally symmetric about said axis and disposed within said chamber;

an RF coil generally symmetric about said axis and insulatively carried by said shield and disposed between said target and said pedestal;

an RF power source responsive to said controller and coupled to said RF coil to power said RF coil to inductively couple RF energy to generate an inductively coupled plasma in a plasma generation area between said target and pedestal; and

a coil biasing source responsive to said controller and coupled to said RF coil and adapted to bias said RF coil to cause coil material to be sputtered from said RF coil;

wherein said controller is adapted to;

operate said magnetron to generate a self-ionized plasma adjacent said target;

operate said target power source to bias said target to sputter said target to provide sputtered target material wherein at least a portion of said sputtered target material is ionized in said self-ionized plasma;

operate said pedestal power source to bias said substrate in said chamber to deposit into each of said holes a barrier layer comprising sputtered target material ionized in said magnetron generated self-ionized plasma in said chamber;

operate said RF source to operate said RF coil to generate an inductively coupled plasma in said chamber;

operate said coil biasing source to bias said RF coil to sputter coil material from said RF coil onto said substrate in said chamber;

operate said pedestal power source to bias said substrate to resputter bottom portions of said barrier layers using said inductively coupled plasma in said chamber to thin said bottom portions of said barrier layers;

operate said magnetron to generate additional self-ionized plasma adjacent said target in said chamber;

operate said target power source to bias said target to sputter said target to provide additional sputtered target material wherein at least a portion of said additional sputtered target material is ionized in said additional self-ionized plasma;

operate said pedestal power source to bias said substrate in said chamber to deposit into each of said holes a liner layer comprising said additional sputtered target material ionized in said additional magnetron generated self-ionized plasma in said chamber;

operate said RF power source to operate said RF coil to generate additional inductively coupled plasma in said chamber;

operate said coil biasing source to bias said RF coil to sputter additional coil material from said RF coil onto said substrate in said chamber; and

operate said pedestal power source to bias said substrate to resputter bottom portions of said liner layers using said additional inductively coupled plasma in said chamber to thin said bottom portions of said liner layers.

66. The reactor of claim 65 wherein said target material and said coil material comprises tantalum and said barrier layer comprises tantalum nitride and said liner layer comprises tantalum.

67. A reactor for depositing conductive material onto a substrate, comprising:

target means for sputter depositing a layer of conductive material onto said substrate, and for generating a self ionized plasma to ionize a portion of said conductive material sputtered from said target means prior to being deposited onto said substrate; and

inductively coupled plasma means for generating an inductively coupled plasma adjacent said substrate.

68. A reactor for depositing conductive material onto a substrate, comprising:

pedestal means for supporting a substrate;

target means for sputter depositing a layer of conductive material onto said substrate, and for generating a self ionized plasma to ionize a portion of said conductive material sputtered from said target means prior to being deposited onto said substrate;

means for biasing said substrate to attract ionized conductive material from said target means to deposit onto said substrate;

inductively coupled plasma means for generating an inductively coupled plasma containing ions within said chamber, said inductively coupled plasma means including an RF coil of conductive material;

said substrate biasing means further for biasing said substrate to attract said ions from said inductively coupled plasma to resputter from said substrate conductive material deposited on said substrate from said target means; and

means for sputtering said coil to deposit coil material onto said substrate while target means conductive material is resputtered from said substrate;

wherein said pedestal means includes a substrate support surface and said target means includes a target which is spaced from said substrate support surface by a throw distance that is greater than 50% of a diameter of the substrate.

69. A method of sputter depositing deposition material onto a substrate, comprising:

providing a chamber having a target;

rotating a magnetron about the back of the target, said magnetron having an area of no more than about ¼

of the area of the target and including an inner magnetic pole of one magnetic polarity surrounded by an outer magnetic pole of an opposite magnetic polarity, a magnetic flux of said outer pole being at least 50% larger than the magnetic flux of said inner pole;

applying power to said target to thereby sputter material from said target onto said substrate; and

applying RF power to a first coil to provide additional plasma density in said chamber.

70. The method of claim 69 wherein said target is spaced from a pedestal for holding said substrate by a throw distance that is greater than 50% of a diameter of the substrate.

71. The method of claim 69 wherein further comprising applying RF power to a second coil to provide additional plasma density.

72. The method of claim 71 wherein said first coil is positioned closer to said target than said substrate pedestal and said second coil is positioned closer to said substrate pedestal than said target.

73. The method of claim 72 wherein said second coil provides more additional plasma density than said first coil during a first interval while target material is sputtered onto said substrate.

74. The method of claim 73 wherein said first coil provides more additional plasma density than said second coil during a second interval while target material is sputtered onto said substrate.

75. The method of claim 69 further comprising, after a plasma has been ignited in the chamber, pumping said chamber to a pressure of no more than 5 milliTorr during at least a first portion of said target power applying.

76. The method of claim 75 further comprising pumping said pressure to a pressure greater than 5 milliTorr during a second portion of target power applying.

77. The method of claim 76 wherein during said second portion, said pressure greater than 5 mTorr is at least 20 mTorr, said RF power is at least 1 kW, and said target power is less than 10 kW.

78. The method of claim 76 wherein during said second portion, said pressure greater than 5 mTorr is at 20-40 mTorr, said RF power is at 1-3 kW, and said target power is at 1-2 kW DC.

79. The method of claim 75 wherein during said first portion, said RF power is at least 1 kW and said target power is at least 10 kW DC.

80. The method of claim 79 wherein during said first portion, said RF power is at least 1 kW and said target power is at least 18 kW DC.

81. The method of claim 75 wherein no RF power is applied to said coil during said first portion of said target power applying.

82. The method of claim 75, wherein said target is spaced from a pedestal for holding said substrate by a throw distance that is greater than 50% of a diameter of the substrate and wherein said pressure is less than 2 milliTorr.

83. The method of claim 82, wherein said throw distance is greater than 80% of said diameter of the substrate.

84. The method of claim 83, wherein said throw distance is greater than 140% of said diameter of the substrate.

85. The method of claim 75, wherein said pressure is less than 2 milliTorr.

86. The method of claim 85, wherein said pressure is less than 1 milliTorr.

87. The method of claim 86, wherein said target is spaced from a pedestal for holding said substrate by a throw distance that is greater than 80% of said diameter of the substrate.

88. The method of claim 75, wherein said substrate is a 200 mm wafer and said target power applying step applies at least 18 kW of DC power to said target normalized to said 200 mm wafer.

89. The method of claim 76 further comprising applying power to a support supporting said substrate to bias said substrate.

90. The method of claim 89 wherein during said applying power to said support is applied at a higher level during said first portion than said second portion.

91. The method of claim 90 wherein during said applying power to said support is applied at approximately 500 watts during said first portion and at approximately 150 watts during said second portion.

92. The method of claim 88, wherein said target power applying power applies at least 24 kW of DC power to said target normalized to said 200 mm wafer.

93. The method of claim 75, wherein said substrate is a 200 mm wafer, said pressure is less than 1 milliTorr, said target is spaced from a pedestal for holding said substrate by a throw distance that is greater than 140% of said substrate diameter, and said target applying power applies at least 24 kW of Dc power to said target normalized to said 200 mm wafer.

94. The method of claim 69, wherein said material is copper which is deposited into a hole formed in a dielectric layer of said substrate and having an aspect ratio of at least 4:

1.

95. The method of claim 94, wherein said copper is deposited to a thickness of between 50 to 300 nm on a top planar surface of said substrate and further comprising filling copper into a remainder of said hole.

96. The method of claim 95, wherein said thickness is between 150 to 200 nm.

97. The method of claim 95, wherein said filling comprises electroplating.

98. The method of claim 95, wherein said filling comprises chemical vapor deposition.

99. The method of claim 76, wherein said material is copper which is deposited into a hole formed in a dielectric layer of said substrate and having an aspect ratio of at least 4:

1, and wherein said copper is deposited to a thickness of between 100 to 200 nm on a top planar surface of said substrate during said first portion and deposited to a thickness of between 50 to 100 nm on a top planar surface of said substrate during said second portion.

100. A method of depositing copper into a hole having an aspect ratio of at least 4:

1 and formed in a dielectric layer of a substrate, comprising;

sputter depositing a first copper layer in a self-ionized plasma in a chamber to form a copper layer on at least a first portion of the walls of said hole but not filling said hole;

sputter depositing a second copper layer in an inductively coupled plasma in said chamber to form another copper layer on at least a second portion of the walls of said hole but not filling said hole; and

depositing a third copper layer onto said first and second layers.

101. The method of claim 100, wherein said sputter depositing a second copper layer is performed after said sputtering depositing a first copper layer.

102. The method of claim 100, wherein said sputter depositing a second copper layer is performed at the same time as said sputter depositing a first copper layer.

103. The method of claim 100, wherein said sputter depositing a second copper at least partially uses RF inductive coupling to form said inductively coupled plasma.

104. The method of claim 100, wherein said first copper layer has a first blanket thickness of copper and said second copper layer has a second blanket thickness of copper, a ratio of said first to said second blanket thicknesses being in a range of 4:

1 to 1;

1.

105. The method of claim 100, wherein said depositing a third copper layer comprises electroplating.

106. The method of claim 100, wherein said depositing a first copper layer is performed at a chamber pressure of less than 5 milliTorr.

107. The method of claim 100, wherein said first layer has a thickness on a top surface of said dielectric layer of 100 to 200 nm.

108. The method of claim 100, wherein said second layer has a thickness on a top surface of said dielectric layer of 50 to 100 nm.

109. The method of claim 100, wherein said depositing a third copper layer fills said hole with copper.

110. The method of claim 100, wherein said depositing a third copper layer comprises chemical vapor deposition.

111. The method of claim 110, further comprising depositing a fourth copper layer which includes electroplating said fourth layer comprising copper onto said third layer to thereby fill said hole with copper.

112. The method of claim 110, wherein depositing a third copper layer fills said hole with copper.

113. A method of sputter depositing copper onto a substrate, comprising:

providing a chamber having target principally comprising copper spaced from a pedestal for holding a substrate to be sputter coated by a throw distance that is greater than 50% of a diameter of the substrate;

rotating a magnetron about the back of the target, said magnetron having an area of no more than about ¼

of the area of the target and including an inner magnetic pole of one magnetic polarity surrounded by an outer magnetic pole of an opposite magnetic polarity, a magnetic flux of said outer pole being at least 50% larger than the magnetic flux of said inner pole;

after a plasma has been ignited in the chamber, pumping said chamber to a pressure of no more than 5 milliTorr;

applying at least 10 kW of DC power to said target normalized to a 200 mm wafer while said chamber is pumped to said pressure, to thereby sputter copper from said target onto said substrate; and

applying RF power to a coil to provide additional plasma density.

115. The reactor of claim 113 further comprising:

a second RF coil insulatively carried within said chamber.

116. The reactor of claim 113 further comprising:

an electrical isolator supported by said chamber;

a second electrically conductive shield generally symmetric about said axis, supported on said isolator, electrically isolated from said chamber and from said target; and

a second RF coil insulatively carried by said second shield.

119. The reactor of claim 115 wherein said first coil is positioned closer to said target than said substrate support and said second coil is positioned closer to said substrate support than said target.

120. The reactor of claim 119 further comprising a first RF generator adapted to apply RF power to said first coil and a second RF generator adapted to apply RF power to said second coil and wherein said controller is adapted to provide greater RF power to said second coil than said first coil during a first interval while target material is sputtered onto said substrate.

121. The reactor of claim 120 wherein said controller is adapted to provide greater RF power to said first coil than said second coil during a second interval while target material is sputtered onto said substrate.

114. A plasma sputter reactor for sputter depositing a film on a substrate, comprising:

a metallic vacuum chamber containing a pedestal aligned to a chamber axis and having a support surface for supporting a substrate to be sputter deposited;

a target comprising a material to be sputter deposited on said substrate and electrically isolated from said vacuum chamber;

a magnetron disposed adjacent said target and having an area of no more than about ¼

of the area of the target and including an inner magnetic pole of one magnetic polarity surrounded by an outer magnetic pole of an opposite magnetic polarity, a magnetic flux of said outer pole being at least 50% larger than the magnetic flux of said inner pole;

a first electrically conductive shield generally symmetric about said axis, supported on and electrically connected to said chamber, and extending away from said target along a wall of said chamber to an elevation behind said support surface;

a first RF coil insulatively carried by said first shield; and

a controller adapted to control the pressure in said chamber to a pressure of no more than 5 milliTorr during at least a first portion of said sputter depositing.

117. The reactor of claim 114 wherein said target is spaced from a pedestal for holding said substrate by a throw distance that is greater than 50% of a diameter of the substrate.

118. The reactor of claim 114 further comprising a first RF generator adapted to apply RF power to said first coil.

122. The reactor of claim 118 wherein said controller is adapted to control said pressure to a pressure greater than 5 milliTorr during a second portion of said sputter depositing while RF power is applied to said coil.

123. The reactor of claim 122 further comprising a DC power supply responsive to said controller and adapted to provide target power to said target.

124. The reactor of claim 123 wherein during said second portion, said pressure greater than 5 mTorr is at least 20 mTorr, said RF power is at least 1 kW, and said target power is less than 10 kW.

125. The reactor of claim 123 wherein during said second portion, said pressure greater than 5 mTorr is at 20-40 mTorr, said RF power is at 1-3 kW, and said target power is at 1-2 kW DC.

126. The reactor of claim 114 further comprising a first RF generator responsive to said controller and adapted to apply RF power to said first coil wherein during said first portion, said RF power is at least 1 kW.

127. The reactor of claim 126 further comprising a DC power supply responsive to said controller and adapted to provide target power to said target wherein during said first portion, said target power is at least 10 kW DC.

128. The reactor of claim 127 wherein during said first portion, said target power is at least 18 kW DC.

129. The reactor of claim 118 wherein said controller is adapted to control said RF generator to provide no RF power during said first portion of said sputter depositing.

130. The reactor of claim 118, wherein said target is spaced from a pedestal for holding said substrate by a throw distance that is greater than 50% of a diameter of the substrate and wherein said pressure is less than 2 milliTorr.

131. The reactor of claim 130, wherein said throw distance is greater than 80% of said diameter of the substrate.

132. The reactor of claim 131, wherein said throw distance is greater than 140% of said diameter of the substrate.

133. The reactor of claim 114, wherein said pressure is less than 2 milliTorr.

134. The reactor of claim 133, wherein said pressure is less than 1 milliTorr.

135. The reactor of claim 134, wherein said target is spaced from a pedestal for holding said substrate by a throw distance that is greater than 80% of said diameter of the substrate.

136. The reactor of claim 114 further comprising a DC power supply, wherein said substrate is a 200 mm wafer and said controller is adapted to apply at least 18 kW of DC power to said target normalized to said 200 mm wafer.

137. The reactor of claim 136, wherein said controller applies at least 24 kW of DC power to said target normalized to said 200 mm wafer.

139. The reactor of claim 122 further comprising a source responsive to said controller and adapted to apply power to said support surface supporting said substrate to bias said substrate.

140. The reactor of claim 139 wherein said support power applied to said support is applied at a higher level during said first portion than said second portion.

141. The reactor of claim 140 wherein said support power applied to said support is applied at approximately 500 watts during said first portion and at approximately 150 watts during said second portion.

142. A reactor for depositing conductive material onto a substrate, comprising:

target means for sputter depositing a layer of conductive material onto said substrate, and for generating a self ionized plasma to ionize a portion of said conductive material sputtered from said target means prior to being deposited onto said substrate; and

inductively coupled plasma means for generating an inductively coupled plasma to ionize a portion of said conductive material sputtered from said target means prior to being deposited onto said substrate.

143. The reactor of claim 142 wherein said target means includes a target comprising a conductive material to be sputter deposited on said substrate and a magnetron disposed adjacent said target and having an area of no more than about ¼

of the area of the target and including an inner magnetic pole of one magnetic polarity surrounded by an outer magnetic pole of an opposite magnetic polarity, a magnetic flux of said outer pole being at least 50% larger than the magnetic flux of said inner pole.

144. The reactor of claim 142 wherein said inductively coupled plasma means includes an RF coil disposed between said target means and said substrate, and RF generator means for applying RF energy to said RF coil.