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Self-ionized and inductively-coupled plasma for sputtering and resputtering

  • US 20030116427A1
  • Filed: 07/25/2002
  • Published: 06/26/2003
  • Est. Priority Date: 08/30/2001
  • Status: Abandoned Application
First Claim
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1. A method of sputter depositing deposition material onto a substrate in a chamber having a target, comprising:

  • rotating a magnetron about the back of the target, said magnetron having an area of no more than ¼

    of the area of the target and including an inner magnetic pole of one magnetic polarity surrounded by an outer magnetic pole of an opposite magnetic polarity, a magnetic flux of said outer pole being at least 50% larger than the magnetic flux of said inner pole to generate a self-ionized plasma adjacent said target;

    applying power to said target to thereby sputter material from said target onto said substrate wherein at least a portion of the sputtered material is ionized in said self-ionized plasma; and

    applying RF power to a coil to inductively couple RF energy to generate an inductively coupled plasma adjacent said substrate.

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