Edge-emitting nitride-based laser diode with P-N tunnel junction current injection

• US 20030116767A1
• Filed: 12/21/2001
• Published: 06/26/2003
• Est. Priority Date: 12/21/2001
• Status: Active Grant

• Current Assignee: Xerox Corporation (Xerox Holdings Corp.)
• Original Assignee: Xerox Corporation (Xerox Holdings Corp.)
• Inventors: Kiesel, Peter, Van de Walle, Christian G., Kneissl, Michael A.
• Granted Patent: US 6,724,013 B2
• Time in Patent Office: Days
• US Class Current: 257/79
• CPC Class Codes: B82Y 20/00 Nanooptics, e.g. quantum optics or photonic crystals
• CPC Class Codes: H01S 5/0421 characterised by the semiconducting contacting layers electrodes H01S5/0425
• CPC Class Codes: H01S 5/3095 Tunnel junction
• CPC Class Codes: H01S 5/34333 with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser

Abstract

A p-n tunnel junction between a p-type semiconductor layer and a n-type semiconductor layer provides current injection for an edge-emitting nitride based semiconductor laser structure. The amount of p-type material in the nitride based semiconductor laser structure can be minimized, with attendant advantages in electrical, thermal, and optical performance, and in fabrication.

Claims

1. A semiconductor laser structure comprising:

a substrate;

a plurality of III-V nitride semiconductor layers formed on said substrate, at least one of said plurality of III-V nitride semiconductor layers forms an active region;

a first semiconductor layer being p-type, a second semiconductor layer formed on said first semiconductor layer, said second semiconductor layer being n-type, tunnel junction means disposed between said first semiconductor layer and said second semiconductor layer for injecting current into said active region; and

wherein a sufficient forward bias is applied to said active region to cause lasing from an edge of said semiconductor laser structure.

2. The semiconductor laser structure of claim 1 wherein said first semiconductor layer is a p-type III-V nitride semiconductor, and said second semiconductor layer is an n-type III-V nitride semiconductor.

3. The semiconductor laser structure of claim 1 wherein said first semiconductor layer is a p-type III-V nitride semiconductor, and said second semiconductor layer is an n-type oxide semiconductor.

4. The semiconductor laser structure of claim 1 wherein a plurality of said plurality of III-V nitride semiconductor layers are n-type.

5. The semiconductor laser structure of claim 1 wherein said tunnel junction means is reverse biased.

6. The semiconductor laser structure of claim 1 wherein one of said plurality of III-V nitride semiconductor layers is a electron blocking layer formed on said active region, said electron blocking layer is a p-type III-V nitride semiconductor, and said first semiconductor layer is formed on said electron blocking layer.

7. The semiconductor laser structure of claim 1 wherein said substrate is sapphire, silicon carbide, spinel, aluminum nitride or gallium nitride.