Methods of forming integrated optoelectronic devices
First Claim
Patent Images
1. A method of forming an optoelectronic device, comprising the steps of:
- forming an electrically conductive layer on a substrate having a first electrically insulating layer thereon;
forming a mirror backing layer from the electrically conductive layer, by forming a groove that extends through the electrically conductive layer and exposes a first surface of the first electrically insulating layer;
removing a portion of the substrate and corresponding portion of the first electrically insulating layer to expose a front surface of the mirror backing layer;
forming an optically reflective mirror surface on the front surface of the mirror backing layer; and
recessing the first electrically insulating layer to expose the groove.
0 Assignments
0 Petitions
Accused Products
Abstract
Methods of forming optoelectronic devices include forming an electrically conductive layer on a first surface of a substrate and forming a mirror backing layer from the electrically conductive layer by forming an endless groove that extends through the electrically conductive layer. A step is then performed to remove a portion of the substrate at a second surface thereof, which extends opposite the first surface. This step exposes a front surface of the mirror backing layer. An optically reflective mirror surface is then formed on the front surface of the mirror backing layer.
35 Citations
77 Claims
-
1. A method of forming an optoelectronic device, comprising the steps of:
-
forming an electrically conductive layer on a substrate having a first electrically insulating layer thereon;
forming a mirror backing layer from the electrically conductive layer, by forming a groove that extends through the electrically conductive layer and exposes a first surface of the first electrically insulating layer;
removing a portion of the substrate and corresponding portion of the first electrically insulating layer to expose a front surface of the mirror backing layer;
forming an optically reflective mirror surface on the front surface of the mirror backing layer; and
recessing the first electrically insulating layer to expose the groove. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29)
-
-
30. A method of forming an optoelectronic device, comprising the steps of:
-
forming an electrically conductive layer on a first surface of a substrate;
forming a mirror backing layer from the electrically conductive layer by forming an endless groove that extends through the electrically conductive layer;
removing a portion of the substrate at a second surface thereof extending opposite the first surface, to expose a front surface of the mirror backing layer; and
forming an optically reflective mirror surface on the front surface of the mirror backing layer. - View Dependent Claims (31, 32, 33, 34, 35, 36, 37, 38, 39)
-
-
40. A method of forming an optoelectronic device, comprising the steps of:
-
forming a monocrystalline silicon mirror backing layer having a thickness greater than about 10 μ
m, adjacent a first surface of a silicon-on-insulator substrate;
forming a polysilicon hinge that mechanically couples the mirror backing layer to the silicon-on-insulator substrate;
removing a portion of the silicon-on-insulator substrate at a second surface thereof using a deep reactive ion etching technique, to expose a front surface of the mirror backing layer; and
forming an optically reflective mirror surface on the front surface of the mirror backing layer. - View Dependent Claims (41, 42, 43, 44, 45, 46, 47, 48, 49)
-
-
50. An optoelectronic device, comprising:
-
a substrate having an opening therein that extends at least partially therethrough and a ledge extending inwardly from a sidewall of the opening;
a mirror in the opening, said mirror having an edge that is supported by the ledge when said mirror is in a closed position; and
a hinge that mechanically couples said mirror to said substrate so that said mirror can be rotated from the closed position to an open position. - View Dependent Claims (51, 52, 53, 54, 55, 56, 57, 58, 59, 60, 61, 62, 63, 64, 65, 66, 67, 68, 69)
-
-
70. An optoelectronic device, comprising:
-
a silicon-on-insulator substrate having an opening therein;
a mirror that is disposed in the opening when in a closed position; and
a polysilicon hinge that mechanically couples said mirror to said silicon-on-insulator substrate so that said mirror can be rotated from the closed position to an open position when a magnetic field is directed to pass through the opening. - View Dependent Claims (71, 72, 73, 74, 75)
-
-
76. A method of operating an optoelectronic device comprising a semiconductor substrate having an opening therein, a mirror disposed in the opening when in a closed position and a hinge that mechanically couples the mirror to the semiconductor substrate, said method comprising the step of:
applying a magnetic field of sufficient first strength through the opening to cause the mirror to rotate about the hinge from the closed position to an open position. - View Dependent Claims (77)
Specification