Method and system for determining a performance of plasma etch equipment
First Claim
1. A method of determining a performance of plasma etch equipment, comprising the steps of etching a semiconductor wafer using the plasma etch equipment, extracting data that depend on the performance of plasma etch equipment, during etching of the semiconductor wafer, comparing the extracted data with predetermined data, and deciding whether the performance of the plasma etch equipment is acceptable, on the basis of a result of comparing the extracted data with predetermined data.
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0 Petitions
Accused Products
Abstract
A method of determining a performance of plasma etch equipment is provided. The method comprises extracting data that depend on the performance of plasma etch equipment, during etching of the wafer, for example by calculating an etch rate and by calculating a non-uniformity of a film being etched. After that, the extracted data are compared to predetermined data, and on the basis of a result of comparing the extracted data with predetermined data the performance of the plasma etch equipment is determined. Further, a system for determining a performance of plasma etch equipment is provided.
10 Citations
22 Claims
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1. A method of determining a performance of plasma etch equipment, comprising the steps of
etching a semiconductor wafer using the plasma etch equipment, extracting data that depend on the performance of plasma etch equipment, during etching of the semiconductor wafer, comparing the extracted data with predetermined data, and deciding whether the performance of the plasma etch equipment is acceptable, on the basis of a result of comparing the extracted data with predetermined data.
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12. A method of determining a performance of plasma etch equipment, comprising the steps of
providing a substrate having a film to be etched, etching the film using the plasma etch equipment, calculating an etch rate of the film during etching of the film, calculating a non-uniformity of the film during etching of the film, comparing the calculated data with predetermined data, and deciding whether the performance of the plasma etch equipment is acceptable, on the basis of a result of comparing the calculated data with predetermined data.
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16. A system for determining a performance of plasma etch equipment, comprising
means for extracting data that depend on the performance of plasma etch equipment, during an etch operation, means for comparing the extracted data with predetermined data, and means for deciding whether the performance of the plasma etch equipment is acceptable, on the basis of a result of comparing the extracted data with predetermined data.
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22. A system for determining a performance of plasma etch equipment, comprising
means for calculating an etch rate during an etch operation, means for calculating a non-uniformity of a film being etched during the etch operation, means for comparing the calculated data with predetermined data, and means for deciding whether the performance of the plasma etch equipment is acceptable, on the basis of a result of comparing the calculated data with predetermined data.
Specification