Light emitting device and manufacturing method thereof

• US 20030119218A1
• Filed: 12/13/2002
• Published: 06/26/2003
• Est. Priority Date: 12/20/2001
• Status: Abandoned Application

• Current Assignee: LG Electronics, Inc. (LG Corporation)
• Original Assignee: LG Electronics, Inc. (LG Corporation)
• Inventors: Jang, Jun Ho
• Application Number:
  US10/318,191
• Publication Number:
  US 20030119218A1
• Time in Patent Office: Days
• US Class Current: 438/46
• CPC Class Codes: H01L 33/22 Roughened surfaces, e.g. at the interface between epitaxial layers
• CPC Class Codes: H01L 33/405 Reflective materials

Abstract

Disclosed is a light emitting device capable of increasing the light power and manufacturing method thereof. The light emitting device includes: a first compound semiconductor layer formed on a substrate and having an etched predetermined region at an upper portion thereof; a second compound semiconductor layer formed on a non-etched region of the first compound semiconductor layer and having a rugged region including a plurality of grooves; a transparent electrode formed on the second compound semiconductor layer; a first electrode formed on the transparent electrode; and a second electrode formed on the etched region of the first compound semiconductor layer.

Claims

1. A light emitting device comprising:

a first compound semiconductor layer formed on a substrate and having an etched predetermined region at an upper portion thereof;

a second compound semiconductor layer formed on a non-etched region of the first compound semiconductor layer and having a rugged region including a plurality of grooves;

a transparent electrode formed on the second compound semiconductor layer; and

a first electrode formed on the transparent electrode; and

a second electrode formed on the etched region of the first compound semiconductor layer.

2. The light emitting device of claim 1, wherein the first and second compound semiconductor layers are made of one selected from a group consisting of GaAs, GaP, GaAs_1-xP_x, Ga_1-xAl_x, As, InP and In_1-xGa_xP.

3. The light emitting device of claim 1, wherein the rugged region has an area that is the same as an area of the first electrode.

4. The light emitting device of claim 1, wherein the rugged region is formed on an upper surface of the second compound semiconductor layer corresponding to a location of the first electrode.

5. The light emitting device of claim 4, wherein the grooves are formed to have a constant size and interval.

6. The light emitting device of claim 1, further comprising an active layer placed between the first compound semiconductor layer and the second compound semiconductor layer.

7. The light emitting device of claim 1, wherein the first compound semiconductor layer further comprises a rugged region formed at a surface thereof beneath the second electrode.

8. The light emitting device of claim 6, wherein the rugged region has an area that is the same as an area of the second electrode.

9. A method for manufacturing a light emitting device, the method comprising the steps of:

(a) sequentially forming an n-type compound semiconductor layer and a p-type compound semiconductor layer on a substrate;

(b) selectively etching the n-type compound semiconductor layer and the p-type compound semiconductor layer such that a predetermined region on the n-type compound semiconductor layer is exposed;

(c) forming a rugged region including a plurality of grooves at a predetermined region of an upper surface of the p-type compound semiconductor layer;

(d) forming a transparent electrode on the p-type compound semiconductor layer; and

(e) forming a p-type electrode on the transparent electrode corresponding to a location where the rugged region is placed, and an n-type electrode on an exposed predetermined region of the n-type compound semiconductor layer.

10. The method of claim 9, wherein the rugged region is formed by a reacting ion etching (RIE) process.

11. The method of claim 9, wherein the rugged region is formed to have an area that is the same as an area of the p-type electrode.

12. The method of claim 9, wherein the plurality of grooves are formed to have a constant size and interval.

13. The method of claim 9, wherein the rugged region is formed at the predetermined region of the upper surface of the p-type compound semiconductor layer and the exposed predetermined portion of the n-type compound semiconductor layer.

14. A light emitting device comprising:

an n-type compound semiconductor layer formed on a substrate and having an etched predetermined region at an upper portion thereof, said etched predetermined region including a first rugged region including a plurality of grooves;

an active layer formed on a non-etched region of the n-type compound semiconductor layer;

a p-type compound semiconductor layer formed on the active layer and having a second rugged region including a plurality of successive grooves;

a transparent electrode formed on the p-type compound semiconductor layer;

a p-type electrode formed on the transparent electrode; and

an n-type electrode formed on the first rugged region of the n-type compound semiconductor layer.